IXTR170P10P
Symbol
Test Conditions
Characteristic Values
ISOPLUS247 (IXTR) Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = -10V, ID = - 85A, Note 1
VGS = 0V, VDS = - 25V, f = 1MHz
35
58
S
Ciss
Coss
Crss
12.6
4190
930
nF
pF
pF
td(on)
tr
td(off)
tf
32
75
82
45
ns
ns
ns
ns
Resistive Switching Times
V
GS = -10V, VDS = 0.5 • VDSS, ID = - 85A
RG = 1 (External)
1 - Gate
2,4 - Drain
3 - Source
Qg(on)
Qgs
240
45
nC
nC
nC
VGS = -10V, VDS = 0.5 • VDSS, ID = - 85A
Qgd
120
RthJC
RthCS
0.40C/W
C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min. Typ.
Max.
IS
VGS = 0V
-170
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = - 85A, VGS = 0V, Note 1
- 680
- 3.3
trr
176
1.25
-14.2
ns
C
A
IF = - 85A, -di/dt = -100A/s
QRM
IRM
VR = - 50V, VGS = 0V
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
