请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTQ80N28T

型号：

IXTQ80N28T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

90 K

下载PDF手册
Advance Technical Infomation  
IXTQ 80N28T  
IXTQ 80N28T  
VDSS = 280  
ID25 = 80  
RDS(on) = 49 mΩ  
V
A
Trench Gate  
Power MOSFET  
N-Channel Enhancement Mode  
For Plasma Display Applications  
Symbol  
TestConditions  
Maximum Ratings  
TO-3P(IXTQ)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
280  
280  
V
V
VGSM  
30  
V
ID25  
TC = 25°C  
80  
75  
A
A
A
G
IDRMS  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
D
(TAB)  
S
240  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
5
V/ns  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
PD  
TC = 25°C  
500  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z Trench gate construction for low RDS(on)  
z International standard package  
z Low package inductance  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- easy to drive and to protect  
Md  
Mounting torque  
(TO-3P)  
1.13/10 Nm/lb.in.  
5.5  
Weight  
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID =1mA  
VDS = VGS, ID = 1mA  
VGS = 20 VDC, VDS = 0  
280  
3.0  
300  
V
V
5.0  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
1
200  
μA  
μA  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
42  
49 mΩ  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
DS99355B(03/06)  
© 2006 IXYS All rights reserved  
IXTQ 80N28T  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-3P (IXTQ) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
40  
60  
S
Ciss  
Coss  
Crss  
5000  
510  
29  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
37  
47  
80  
50  
ns  
ns  
ns  
ns  
VGS = 15 V, VDS =220 V, ID = 40A  
RG = 5 Ω (External)  
Qg(on)  
Qgs  
115  
40  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
37  
RthJC  
RthCK  
0.25 K/W  
K/W  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
80  
A
A
V
ISM  
Repetitive  
240  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
TJM  
IF = 25 A  
-di/dt = 100 A/μs  
VR = 100 V  
200  
2
ns  
QRM  
μC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
6,259,123B1  
6,306,728 B1  
IXTQ 80N28T  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
80  
70  
60  
50  
40  
30  
20  
10  
0
180  
160  
140  
120  
100  
80  
V
GS  
= 10V  
8V  
7V  
V
GS  
= 10V  
8V  
7V  
6V  
60  
6V  
5V  
40  
5V  
20  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
2
4
6
8 10 12 14 16 18 20  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
80  
70  
60  
50  
40  
30  
20  
10  
0
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
GS  
= 10V  
8V  
7V  
V
GS  
= 10V  
6V  
5V  
I
= 80A  
D
I
= 40A  
D
0.7  
0.4  
0
1
2
3
4
5
6
VD S - Volts  
7
8
9
10  
-50  
-25  
0
25  
50  
TJ - Degrees Centigrade  
75  
100 125 150  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.7  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
External Lead Current Limit  
V
= 10V  
GS  
º
T = 125 C  
J
º
T = 25 C  
J
0.7  
-50  
-25  
0
25  
50  
TC - Degrees Centigrade  
75  
100 125 150  
0
20  
40  
60  
80 100 120 140 160 180  
I D - Amperes  
© 2006 IXYS All rights reserved  
IXTQ 80N28T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
120  
100  
80  
60  
40  
20  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
º
T = -40 C  
J
º
25 C  
º
125 C  
º
T = 125 C  
J
º
25 C  
º
-40 C  
3.5  
4
4.5  
5
5.5  
6
6.5  
0
20  
40  
60  
I D - Amperes  
80  
100 120 140 160  
VG S - Volts  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
200  
180  
160  
140  
120  
100  
80  
V
= 140V  
DS  
I
I
= 40A  
D
G
= 10mA  
º
T = 125 C  
J
60  
º
T = 25 C  
J
40  
20  
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
20  
40  
60  
80  
Q G - nanoCoulombs  
100  
120  
VS D - Volts  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
10000  
1000  
100  
T = 150ºC  
J
C
iss  
T
C
= 25ºC  
R
Limit  
DS(on)  
C
C
oss  
25µs  
100µs  
f = 1MHz  
rss  
20  
10  
0
5
10  
15  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTQ 80N28T  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2006 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.204691s