IXTH 41N25
Symbol
Test Conditions
Characteristic values
Min. Typ. Max.
TO-247 AD Outline
(TJ = 25°C unless otherwise specified)
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
20
28
S
Ciss
Coss
Crss
3200
510
180
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
19
19
79
17
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 3.6 Ω (External)
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Min. Max.
Inches
Qg(on)
Qgs
110
18
48
nC
nC
nC
Min. Max.
A
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
A
A12
Qgd
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
RthJC
RthCK
0.42 K/W
K/W
0.25
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
4.50
.780 .800
.177
L1
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
R
S
5.49
.170 .216
242 BSC
6.15 BSC
Source-Drain Diode
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
41
A
A
V
ISM
Repetitive; pulse width limited by TJM
164
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 0.5 IS, -di/dt = 100 A/µs, VR = 100V
300
3.0
ns
µC
Qrr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
