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IXTP26P10T

型号：

IXTP26P10T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

287 K

下载PDF手册
TrenchPTM  
Power MOSFET  
VDSS = - 100V  
ID25 = - 26A  
IXTY26P10T  
IXTA26P10T  
IXTP26P10T  
RDS(on)  
90m  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-252 (IXTY)  
G
S
D (Tab)  
D (Tab)  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
- 100  
- 100  
V
V
S
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
15  
25  
V
V
TO-220 (IXTP)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
- 26  
- 80  
A
A
G
D
S
D (Tab)  
IA  
EAS  
TC = 25C  
TC = 25C  
- 26  
300  
A
mJ  
PD  
TC = 25C  
150  
W
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Extended FBSOA  
Fast Intrinsic Diode  
Low RDS(ON) and QG  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25C, Unless Otherwise Specified)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250A  
VDS = VGS, ID = - 250A  
VGS = 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
-100  
V
V
- 2.5  
- 4.5  
Applications  
50 nA  
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
IDSS  
-10 A  
- 250 A  
TJ = 125C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
90 m  
DS100291B(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY26P10T IXTA26P10T  
IXTP26P10T  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
10  
17  
S
Ciss  
Coss  
Crss  
3820  
280  
93  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
20  
15  
37  
11  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3(External)  
Qg(on)  
Qgs  
52  
18  
16  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.83 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 26  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
-104  
-1.5  
trr  
QRM  
IRM  
70  
210  
- 6  
ns  
nC  
A
IF = 0.5 • ID25, -di/dt = -100A/s  
VR = - 50V, VGS = 0V  
Note 1: Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTY26P10T IXTA26P10T  
IXTP26P10T  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
-28  
-24  
-20  
-16  
-12  
-8  
-100  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
V
= -10V  
- 9V  
GS  
V
= -10V  
GS  
- 9V  
- 8V  
- 8V  
- 7V  
- 7V  
- 6V  
- 5V  
- 6V  
- 5V  
- 4V  
-4  
0
0
-5  
-10  
-15  
-20  
-25  
-30  
0
0
0
-0.2 -0.4 -0.6 -0.8  
-1  
-1.2 -1.4 -1.6 -1.8  
-2  
-2.2 -2.4  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = -13A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
-28  
-24  
-20  
-16  
-12  
-8  
V
= -10V  
GS  
- 9V  
- 8V  
V
= -10V  
GS  
I
= - 26A  
- 7V  
- 6V  
D
I
= -13A  
D
- 5V  
- 4V  
-4  
0
-0.5  
-1  
-1.5  
-2  
-2.5  
-3  
-3.5  
-4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = -13A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
-30  
-25  
-20  
-15  
-10  
-5  
V
= -10V  
GS  
T
J
= 125oC  
T
J
= 25oC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
TC - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY26P10T IXTA26P10T  
IXTP26P10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
30  
25  
20  
15  
10  
5
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
T
= - 40oC  
J
25oC  
T
J
= 125oC  
25oC  
- 40oC  
125oC  
0
0
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-7.0  
-7.5  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
V
= - 50V  
DS  
D
I
I
= -13A  
= -1mA  
G
T
J
= 125oC  
T
J
= 25oC  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
-0.3  
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1.0  
-1.1  
-1.2  
-1.3  
-1.4  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
-100  
25μs  
R
DS(on)  
Limit  
C
iss  
100μs  
-
1,000  
100  
10  
10  
1ms  
C
oss  
10ms  
100ms  
-
1
DC  
C
rss  
T = 150oC  
J
T
C
= 25oC  
= 1 MHz  
-5  
f
Single Pulse  
-
0.1  
1
10  
100  
1000  
-
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-
-
-
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTY26P10T IXTA26P10T  
IXTP26P10T  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
18  
17  
16  
15  
14  
13  
12  
18  
17  
16  
15  
14  
13  
12  
R
G
= 3Ω, V = -10V  
GS  
R
G
= 3Ω, V = -10V  
GS  
V
= - 50V  
DS  
V
= - 50V  
DS  
T = 25oC  
J
I
= -13A  
= - 26A  
D
I
D
T = 125oC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
-12  
-14  
-16  
-18  
-20  
-22  
-24  
-26  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
50  
40  
30  
20  
10  
0
35  
14  
70  
60  
50  
40  
30  
20  
10  
t r  
td(on)  
t f  
td(off)  
TJ = 125oC, VGS = -10V  
13  
12  
11  
10  
9
R
G
= 3Ω, V = -10V  
GS  
30  
25  
20  
15  
10  
VDS = - 50V  
V
= - 50V  
DS  
I
= -13A, - 26A  
D
I
= -13A, - 26A  
D
8
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
14  
13  
12  
11  
10  
9
48  
35  
80  
t f  
td(off)  
t f  
td(off)  
T = 125oC, VGS = -10V  
44  
40  
36  
32  
28  
24  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
R
G
= 3Ω, VGS = -10V  
J
VDS = - 50V  
VDS = - 50V  
I
= -13A  
D
T = 25oC, 125oC  
J
I
= - 26A  
D
8
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
-12  
-14  
-16  
-18  
-20  
-22  
-24  
-26  
ID - Amperes  
RG - Ohms  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY26P10T IXTA26P10T  
IXTP26P10T  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
TO-252 AA Outline  
TO-263 Outline  
TO-220 Outline  
A
E
b3  
A
C2  
E
E1  
4
c2  
L3  
A
E
oP  
4
A1  
L1  
L2  
D1  
D
H1  
A1  
A2  
Q
H
H
A1  
L4  
1
2
3
1
2
3
D2  
D
L1  
b2  
L
c
b
b2  
L3  
c
D1  
1 - Gate  
2,4 - Drain  
3 - Source  
e
e
e
e1  
0.43 [11.0]  
L2  
e1  
E1  
0  
0
A2  
5.55MIN  
OPTIONAL  
EJECTOR  
PIN  
0.34 [8.7]  
L1  
0.66 [16.6]  
A2  
L
6.50MIN  
4
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
6.40  
2.28  
e
c
3X b  
3X b2  
2.85MIN  
1.25MIN  
e1  
BOTTOM  
VIEW  
1 - Gate  
2,4 - Drain  
3 - Source  
LAND PATTERN RECOMMENDATION  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_26P10T(A2-P11) 10-21-10  
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