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IXTP24N65X2

型号：

IXTP24N65X2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

287 K

下载PDF手册
X2-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 24A  
RDS(on) 145m  
IXTA24N65X2  
IXTP24N65X2  
IXTH24N65X2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
D (Tab)  
TO-220 (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
650  
650  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
D (Tab)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
24  
48  
A
A
TO-247 (IXTH)  
IA  
TC = 25C  
TC = 25C  
12  
A
EAS  
600  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
15  
V/ns  
W
G
D
D (Tab)  
S
390  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.0  
5.0  
Applications  
100 nA  
A  
IDSS  
5
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
TJ = 125C  
100 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
145 m  
Robotics and Servo Controls  
DS100689C(5/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA24N65X2 IXTP24N65X2  
IXTH24N65X2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
13  
22  
S
RGi  
1.1  
Ciss  
Coss  
Crss  
2060  
1470  
1.2  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
83  
pF  
pF  
VGS = 0V  
Energy related  
Time related  
336  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
20  
25  
50  
19  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 10(External)  
Qg(on)  
Qgs  
36  
9
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
13  
RthJC  
RthCS  
0.32 C/W  
TO-220  
TO-247  
0.50  
0.25  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
24  
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
96  
A
1.4  
V
trr  
QRM  
IRM  
390  
3.3  
17  
ns  
IF = 12A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTA24N65X2 IXTP24N65X2  
IXTH24N65X2  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
24  
20  
16  
12  
8
V
= 10V  
V
= 10V  
8V  
GS  
GS  
50  
40  
30  
20  
10  
0
8V  
7V  
7V  
6V  
5V  
6V  
5V  
4
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 12A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
24  
20  
16  
12  
8
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
7V  
I
= 24A  
D
6V  
I
= 12A  
D
4
5V  
4V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 12A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.6  
4.2  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
T
J
= 125oC  
V
GS(th)  
T
J
= 25oC  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA24N65X2 IXTP24N65X2  
IXTH24N65X2  
Fig. 8. Input Admittance  
Fig. 7. Maximum Drain Current vs. Case Temperature  
28  
24  
20  
16  
12  
8
36  
32  
28  
24  
20  
16  
12  
8
T
J
= 125oC  
25oC  
- 40oC  
4
4
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
45  
40  
35  
30  
25  
20  
15  
10  
5
80  
T
J
= - 40oC  
70  
60  
50  
40  
30  
20  
10  
0
25oC  
125oC  
T
J
= 125oC  
T
J
= 25oC  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
ID - Amperes  
VSD - Volts  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
8
100000  
10000  
1000  
100  
= 1 MHz  
f
V
I
= 325V  
DS  
= 12A  
D
I
= 10mA  
G
C
C
iss  
6
4
oss  
rss  
10  
2
1
C
0
0.1  
0
4
8
12  
16  
20  
24  
28  
32  
36  
1
10  
100  
1000  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
VDS - Volts  
IXTA24N65X2 IXTP24N65X2  
IXTH24N65X2  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
100  
10  
18  
16  
14  
12  
10  
8
R
DS(  
on  
Limit  
)
25μs  
100μs  
1
1ms  
6
0.1  
0.01  
10ms  
T = 150oC  
4
J
T
C
= 25oC  
2
Single Pulse  
0
10  
100  
1,000  
0
100  
200  
300  
400  
500  
600  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_24N65X2(X4-S602) 12-17-15  
IXTA24N65X2 IXTP24N65X2  
IXTH24N65X2  
TO-263 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-220 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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