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IXTC96N25T

型号：

IXTC96N25T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

159 K

下载PDF手册
Preliminary Technical Information  
Trench Gate  
Power MOSFET  
(Electrically Isolated Back Surface)  
VDSS = 250V  
ID25 = 40A  
RDS(on) ≤ 31mΩ  
IXTC96N25T  
N-Channel Enhancement Mode  
Avalanche Rated  
ISOPLUS220 (IXTC)  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
250  
250  
V
V
G
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
D
S
VGSM  
Transient  
± 30  
V
Isolated back surface  
ID25  
IDM  
TC = 25°C  
40  
A
A
TC = 25°C, pulse width limited by TJM  
230  
IAS  
TC = 25°C  
TC = 25°C  
5
2
A
J
G = Gate  
S = Source  
D = Drain  
EAS  
PD  
TC = 25°C  
147  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Silicon chip on Direct-Copper-Bond  
substrate  
z Isolated mounting surface  
z 2500V electrical isolation  
z Low drain to tab capacitance (< 30pF)  
TJM  
Tstg  
-55 ... +150  
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
50/60Hz, t = 1 minute, IISOL < 1mA, RMS  
Mounting force  
300  
260  
°C  
°C  
TSOLD  
VISOL  
FC  
2500  
V
Advantages  
11..65 / 2.5..14.6  
N/lb.  
g
z
Easy assembly  
Space savings  
High power density  
Weight  
2
z
z
Applications  
z DC-DC converters  
z Battery chargers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
250  
3
Typ.  
Max.  
z Switched-mode and resonant-mode  
power supplies  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
V
V
z DC choppers  
z AC motor control  
z Uninterruptible power supplies  
z High speed power switching  
applications  
5
± 200 nA  
μA  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 125°C  
250 μA  
RDS(on)  
VGS = 10V, ID = 48A, Note 1  
27  
31 mΩ  
DS99915(10/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTC96N25T  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS220 (IXTC) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V, ID = 48A, Note 1  
50  
82  
S
Ciss  
Coss  
Crss  
6100  
625  
75  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
20  
22  
59  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 15V, VDS = 0.5 • VDSS, ID = 48A  
RG = 2.5Ω (External)  
1.Gate 2. Drain  
3.Source  
Qg(on)  
Qgs  
114  
33  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 VDSS, ID = 48A  
Note: Bottom heatsink (Pin 4) is  
electrically isolated from Pins 1, 2 and 3.  
Qgd  
34  
RthJC  
RthCS  
0.85 °C/W  
°C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
96  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
300  
1.5  
trr  
158  
23  
ns  
A
IF = 48A, -di/dt = 250A/μs  
VR = 100V, VGS = 0V  
IRM  
QRM  
1.8  
μC  
Notes: 1. Pulse test: t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTC96N25T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0
2
4
6
8
10 12 14 16 18 20 22 24  
VDS - Volts  
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 48A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
5V  
I D = 96A  
I D = 48A  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 48A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100 120 140 160 180 200  
ID - Amperes  
TC - Degrees Centigrade  
© 2007 IXYS CORPORATION, All rights reserved  
IXTC96N25T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
140  
120  
100  
80  
130  
120  
110  
100  
90  
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
80  
70  
60  
125ºC  
60  
50  
40  
40  
30  
20  
20  
10  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
3.4  
3.8  
4.2  
4.6  
5
5.4  
5.8  
6.2  
6.6  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
200  
180  
160  
140  
120  
100  
80  
VDS = 125V  
I
I
D = 25A  
G = 10mA  
TJ = 125ºC  
60  
TJ = 25ºC  
40  
20  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
10 20 30 40 50 60 70 80 90 100 110 120  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
1.00  
10,000  
C
C
iss  
1,000  
100  
10  
0.10  
oss  
C
rss  
f = 1 MHz  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTC96N25T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
24  
22  
20  
18  
16  
14  
12  
10  
24  
22  
20  
18  
16  
14  
12  
10  
RG = 2.5  
Ω
VGS = 15V  
VDS = 125V  
TJ = 25ºC  
RG = 2.5  
Ω
I D = 96A  
VGS = 15V  
VDS = 125V  
I D = 48A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
45  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
24  
26  
25  
24  
23  
22  
21  
20  
19  
34  
72  
70  
68  
66  
64  
62  
60  
58  
56  
54  
52  
- - - -  
- - - -  
td(off)  
tr  
td(on)  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
tf  
I D = 48A, 96A  
22  
20  
18  
16  
14  
12  
10  
TJ = 125ºC, VGS = 15V  
VDS = 125V  
RG = 2.5 , VGS = 15V  
Ω
VDS = 125V  
I D = 48A  
I D = 96A  
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
32  
30  
28  
26  
24  
22  
20  
18  
16  
68  
66  
64  
62  
60  
58  
56  
54  
52  
70  
60  
50  
40  
30  
20  
10  
160  
140  
120  
100  
80  
- - - -  
td(off)  
tf  
- - - -  
td(off)  
tf  
RG = 2.5  
, VGS = 15V  
Ω
TJ = 125ºC, VGS = 15V  
DS = 125V  
TJ = 25ºC  
VDS = 125V  
V
TJ = 125ºC  
I D = 48A, 96A  
TJ = 25ºC  
60  
TJ = 125ºC  
40  
45 50 55 60 65 70 75 80 85 90 95 100  
2
3
4
5
6
7
8
9
10  
RG - Ohms  
ID - Amperes  
© 2007 IXYS CORPORATION, All rights reserved  
IXYS REF: T_96N25T(7W)10-11-07-A  
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