IXYS
|
IXTA-200N085T
|
N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] |
5 页
|
|
LITTELFUSE
|
IXTA02N250
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[ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] |
5 页
|
|
|
IXYS
|
IXTA02N250HV
|
[ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] |
5 页
|
|
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LITTELFUSE
|
IXTA02N250HV
|
[ Power Field-Effect Transistor, ] |
6 页
|
|
|
IXYS
|
IXTA02N250HV-TRL
|
[ Power Field-Effect Transistor, ] |
5 页
|
|
|
IXYS
|
IXTA02N450HV
|
高电压功率MOSFET[ High Voltage Power MOSFETs ] |
5 页
|
|
|
IXYS
|
IXTA05N100
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高电压的MOSFET[ High Voltage MOSFET ] |
4 页
|
|
|
IXYS
|
IXTA05N100-TRL
|
[ Power Field-Effect Transistor, ] |
5 页
|
|
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LITTELFUSE
|
IXTA05N100HVTRL
|
[ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] |
4 页
|
|
|
IXYS
|
IXTA05N100P
|
[ Fast Intrinsic Diode ] |
7 页
|
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