IXTF03N400
Symbol
Test Conditions
Characteristic Values
ISOPLUS i4-PakTM (HV) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 50V, ID = 100mA, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
110
180
mS
Ciss
Coss
Crss
435
19
6
pF
pF
pF
td(on)
tr
td(off)
tf
17
16
86
58
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 250V, ID = 150mA
RG = 50Ω (External)
Qg(on)
Qgs
16.3
1.9
nC
nC
nC
Pin 1 = Gate
PIN 1 = Gate
Pin 2 = Source
PIN 2 = Source
Pin 3 = Drain
PIN 3 = Drain
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25
Tab 4 = Isolated
TAP 4 = Electically Isolated 4000V
Qgd
8.8
RthJC
RthCS
1.78 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
300 mA
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = 300mA, VGS = 0V, Note 1
IF = 1A, -di/dt = 100A/μs, VR = 200V
1.2
3.0
A
V
2.8
μs
Notes: 1. Pulse test, t < 300μs, duty cycle, d < 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
