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IXTN90N25L2

型号：

IXTN90N25L2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

136 K

下载PDF手册
Linear L2TM  
PowerMOSFET  
VDSS = 250V  
ID25 = 90A  
IXTN90N25L2  
w/ Extended FBSOA  
RDS(on) 36m  
N-Channel Enhancement Mode  
GuaranteedFBSOA  
AvalancheRated  
miniBLOC,SOT-227  
E153432  
S
G
Symbol  
VDSS  
TestConditions  
MaximumRatings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
250  
250  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
S
D
ID25  
IDM  
TC =25C  
TC = 25C, Pulse Width Limited by TJM  
90  
A
A
G = Gate  
S = Source  
D = Drain  
360  
IA  
TC =25C  
TC =25C  
45  
3
A
J
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
EAS  
PD  
TC =25C  
735  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
 Designed for Linear Operation  
 International Standard Package  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Guaranteed FBSOA at 75°C  
 AvalancheRated  
 Molding Epoxy Meets UL94 V-0  
FlammabilityClassification  
 MiniBLOCwith AluminiumNitride  
Isolation  
Weight  
30  
g
Applications  
 ProgrammableLoads  
 CurrentRegulators  
 DC-DCConverters  
 BatteryChargers  
Symbol  
TestConditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25C, Unless Otherwise Specified)  
 DCChoppers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 3mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
250  
2.0  
V
 Temperature and Lighting Controls  
4.5  
V
Advantages  
200 nA  
 Easy to Mount  
 SpaceSavings  
 High Power Density  
IDSS  
50 A  
2.5 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 45A, Note 1  
36 m  
DS100103A(4/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTN90N25L2  
Symbol  
TestConditions  
Characteristic Values  
SOT-227B (IXTN) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
35  
50  
65  
S
Ciss  
Coss  
Crss  
23  
2140  
360  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
50  
175  
40  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1(External)  
160  
Qg(on)  
Qgs  
640  
125  
385  
nC  
nC  
nC  
(M4 screws (4x) supplied)  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.17C/W  
C/W  
0.05  
Safe Operating Area Specification  
Symbol  
SOA  
TestConditions  
Min.  
Typ.  
Max.  
VDS = 250V, ID = 1.4A, TC = 75°C, tp = 3s  
350  
W
Source-DrainDiode  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
90  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 45A, VGS = 0V, Note 1  
360  
1.5  
trr  
IRM  
266  
23  
ns  
A
IF = 45A, -di/dt = 100A/s  
VR =80V, VGS = 0V  
QRM  
3.0  
μC  
Note:  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072  
4,881,106  
4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405 B2 6,759,692  
6,710,463  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTN90N25L2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 20V  
GS  
V
= 20V  
14V  
12V  
GS  
12V  
10V  
10V  
9V  
8V  
9V  
8V  
7V  
6V  
5V  
7V  
6V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 45A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 20V  
GS  
V
= 10V  
GS  
12V  
10V  
9V  
8V  
7V  
I
= 90A  
D
I
= 45A  
D
6V  
5V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 45A Value vs.  
Drain Current  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240  
ID - Amperes  
TC - Degrees Centigrade  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTN90N25L2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
T
J
= - 40ºC  
25ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
125ºC  
60  
40  
20  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
0
20  
40  
60  
80  
100  
120  
140  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
280  
240  
200  
160  
120  
80  
V
= 125V  
DS  
I
I
= 45A  
D
G
= 10mA  
6
T
J
= 125ºC  
4
40  
T
= 25ºC  
1.0  
J
2
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.1  
1.2  
1.3  
1.4  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
1
100,000  
10,000  
1,000  
100  
f
= 1 MHz  
C
iss  
0.1  
0.01  
C
C
oss  
rss  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTN90N25L2  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
1,000  
100  
10  
1,000  
100  
10  
25µs  
R
Limit  
R
Limit  
DS(on)  
DS(on)  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
100ms  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
TJ = 150ºC  
C = 75ºC  
Single Pulse  
100ms  
DC  
T
T
DC  
1
1
1
10  
100  
1000  
1
10  
100  
1000  
VDS - Volts  
VDS - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_90N25L2(9R)01-20-09-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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