IXTA15N50L2 IXTP15N50L2
IXTH15N50L2
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
4.5
6.3
8.0
S
Ciss
Coss
Crss
4080
265
68
pF
pF
pF
td(on)
tr
td(off)
tf
38
73
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
110
65
Qg(on)
Qgs
123
20
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
nC
1 = Gate
2 = Drain
3 = Source
Qgd
72
nC
RthJC
RthCS
0.42 °C/W
(TO-220)
(TO-247)
0.50
0.25
°C/W
°C/W
Safe Operating Area Specification
Characteristic Values
Min. Typ. Max.
Symbol
SOA
Test Conditions
VDS = 400V, ID = 375mA, TC = 75°C, tp = 2s 150
W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
TO-220 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
15
A
A
ISM
VSD
trr
Repetitive, pulse width limited by TJM
IF = 15A, VGS = 0V, Note 1
60
1.5
V
IF = 15A, -di/dt = 100A/μs, VR = 100V, VGS = 0V
570
ns
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 Outline
Pins: 1 - Gate
3 - Source
2 - Drain
1 = Gate
2 = Drain
3 = Source
4 = Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
