Advance Technical Information
IXTH 48N15
IXTT 48N15
VDSS
ID25
= 150 V
= 48 A
High Current
Power MOSFET
RDS(on) = 32 mΩ
N-Channel Enhancement Mode
TO-247 AD (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
150
150
V
V
VGS
Continuous
Transient
±20
±30
V
V
(TAB)
VGSM
ID25
TC = 25°C
48
A
IDM
IAR
TC = 25°C, pulse width limited by TJM
TC = 25°C
192
48
A
A
TO-268 (IXTT) Case Style
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
G
1.0
(TAB)
S
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
PD
TC = 25°C
180
W
TJ
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJM
Tstg
Features
●
TL
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
°C
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
●
●
●
Md
Weight
1.13/10 Nm/lb.in.
TO-247AD
TO-268
6
4
g
g
●
Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
●
Easy to mount
Space savings
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
150
V
V
●
●
2.0
4.0
High power density
±100
nA
IDSS
TJ = 25°C
TJ = 125°C
25
µA
V
GS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
250
µA
RDS(on)
32 mΩ
98926-A (10/02)
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