PZTA 42
PZTA 43
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 1 mA, I
B
= 0
PZTA 42
PZTA 43
300
200
–
–
–
–
Collector-base breakdown voltage
IC
= 100 µA, I
B
= 0
PZTA 42
PZTA 43
300
200
–
–
–
–
Emitter-base breakdown voltage
= 100 µA, I = 0
6
–
–
IE
C
Collector-base cutoff current
ICB0
V
V
V
V
CB = 200 V
CB = 160 V
CB = 200 V, T
CB = 160 V, T
PZTA 42
PZTA 43
PZTA 42
PZTA 43
–
–
–
–
–
–
–
–
100
100
20
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
20
Emitter-base cutoff current
= 0
IEB0
–
–
100
nA
V
EB = 3 V, I
C
DC current gain1)
hFE
–
25
40
40
–
–
–
–
–
–
IC
IC
IC
= 1 mA, VCE = 10 V
= 10 mA, VCE = 10 V
= 30 mA, VCE = 10 V
Collector-emitter saturation voltage1)
V
V
CEsat
BEsat
V
–
–
–
–
0.5
0.4
IC
= 20 mA, I
B
= 2 mA
PZTA 42
PZTA 43
Base-emitter saturation voltage
= 20 mA, I = 2 mA
–
–
–
0.9
–
IC
B
AC characteristics
Transition frequency
fT
70
MHz
pF
IC
= 20 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
C
obo
VCB = 20 V, f = 1 MHz
PZTA 42
PZTA 43
–
–
–
–
3
4
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
