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IXTK32P60P

型号：

IXTK32P60P

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

125 K

下载PDF手册
PolarPTM  
Power MOSFET  
VDSS = - 600V  
ID25 = - 32A  
IXTK32P60P  
IXTX32P60P  
RDS(on)  
350m  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
- 600  
- 600  
V
V
VDGR  
Tab  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
PLUS247 (IXTX)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
- 32  
- 96  
A
A
IA  
EAS  
TC = 25C  
TC = 25C  
- 32  
3.5  
A
J
G
D
S
Tab  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
10  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
890  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
C  
C  
Features  
International Standard Packages  
Rugged PolarPTM Process  
Avalanche Rated  
Md  
Mounting Force  
Mounting Torque  
(PLUS247)  
(TO-264)  
20..120/4.5..27  
N/lb.  
Nm/lb.in.  
1.13/10  
Weight  
PLUS247  
TO-264  
6
10  
g
g
Low Package Inductance  
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
- 600  
- 2.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250A  
VDS = VGS, ID = -1mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
- 4.0  
Applications  
100 nA  
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
IDSS  
- 50 A  
TJ = 125C  
- 250 A  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
350 m  
Current Regulators  
DS99990C(3/15)  
© 2015 IXYS CORPORATION, All rights reserved  
IXTK32P60P  
IXTX32P60P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
21  
32  
S
Ciss  
Coss  
Crss  
11.1  
925  
77  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
37  
27  
95  
33  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1(External)  
: 1 - Gate  
2 - Drain  
3 - Source  
4 - Drain  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
Qg(on)  
Qgs  
196  
54  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
58  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
RthJC  
RthCS  
0.14C/W  
C/W  
0.15  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
Source-Drain Diode  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
R
R1  
6.07  
8.38  
3.81  
1.78  
6.27  
8.69  
4.32  
2.29  
.239  
.330  
.150  
.070  
.247  
.342  
.170  
.090  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IS  
VGS = 0V  
- 32  
A
A
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = -16A, VGS = 0V, Note 1  
-128  
- 2.8  
PLUS 247TM Outline  
V
trr  
QRM  
IRM  
480  
11.4  
- 47.6  
nS  
C  
A
IF = -16A, -di/dt = -150A/s  
VR = -100V, VGS = 0V  
Note  
1: Pulse test, t 300s, duty cycle, d 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTK32P60P  
IXTX32P60P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
-32  
-28  
-24  
-20  
-16  
-12  
-8  
VGS = -10V  
- 7V  
VGS = -10V  
- 7V  
- 6V  
- 6V  
- 5V  
- 5V  
-4  
0
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10  
0
-5  
-10  
-15  
-20  
-25  
-30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = -16A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-32  
-28  
-24  
-20  
-16  
-12  
-8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = -10V  
- 7V  
VGS = -10V  
- 6V  
- 5V  
I D = - 32A  
I D = -16A  
-4  
0
0
-5  
-10  
-15  
-20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = -16A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
-36  
-32  
-28  
-24  
-20  
-16  
-12  
-8  
TJ = 125ºC  
VGS = -10V  
TJ = 25ºC  
-4  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
TC - Degrees Centigrade  
ID - Amperes  
© 2015 IXYS CORPORATION, All rights reserved  
IXTK32P60P  
IXTX32P60P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-3.6  
-40  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
-100  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = - 300V  
D = -16A  
I G = -1mA  
I
TJ = 125ºC  
TJ = 25ºC  
-0.8  
-1.2  
-1.6  
-2.0  
-2.4  
-2.8  
-3.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
-
100  
RDS(on) Limit  
= 1 MHz  
f
25µs  
100µs  
C
iss  
-
10  
1ms  
10ms  
C
oss  
DC, 100ms  
-
1
TJ = 150ºC  
TC = 25ºC  
C
rss  
Single Pulse  
10  
-
0.1  
-
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-
-
1000  
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK32P60P  
IXTX32P60P  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2015 IXYS CORPORATION, All rights reserved  
IXYS REF: T_32P60P(B9)3-25-09-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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