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IXTX550N055T2

型号：

IXTX550N055T2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

177 K

下载PDF手册
Advance Technical Information  
TrenchT2TM GigaMOSTM  
Power MOSFET  
VDSS = 55V  
ID25 = 550A  
RDS(on) ≤ 1.6mΩ  
IXTK550N055T2  
IXTX550N055T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
55  
55  
V
V
Tab  
D
S
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXTX)  
ID25  
IL(RMS)  
IDM  
TC = 25°C (Chip Capability)  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
550  
160  
1375  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
200  
3
A
J
G
Tab  
D
S
PD  
TC = 25°C  
1250  
W
G = Gate  
S = Source  
D
= Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Tab = Drain  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
z Avalanche Rated  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z
Low RDS(on)  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
55  
V
V
z DC-DC Converters and Off-Line UPS  
z Primary-Side Switch  
z High Speed Power Switching  
Applications  
2.0  
4.0  
± 200 nA  
10 μA  
IDSS  
TJ = 150°C  
1
mA  
RDS(on)  
VGS = 10V, ID = 100A, Notes 1 & 2  
1.6 mΩ  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100217(11/09)  
IXTK550N055T2  
IXTX550N055T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXTK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
90  
150  
S
Ciss  
Coss  
Crss  
40  
4970  
1020  
nF  
pF  
pF  
RGI  
td(on)  
tr  
Gate Input Resistance  
1.36  
45  
Ω
ns  
ns  
ns  
ns  
Resistive Switching Times  
40  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 200A  
td(off)  
tf  
90  
Millimeter  
Inches  
RG = 1Ω (External)  
Dim.  
Min.  
Max.  
Min.  
Max.  
230  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qg(on)  
Qgs  
595  
150  
163  
nC  
nC  
nC  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
.215 BSC  
0.15  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Source-Drain Diode  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Symbol  
Test Conditions  
Characteristic Values  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
PLUS 247TM (IXTX) Outline  
IS  
VGS = 0V  
550  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1700  
1.2  
trr  
IRM  
100  
5
ns  
A
IF = 100A, VGS = 0V  
-di/dt = 100A/μs  
VR = 27.5V  
QRM  
250  
nC  
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Includes lead resistance.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK550N055T2  
IXTX550N055T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
10V  
VGS = 15V  
8V  
10V  
8V  
7V  
7V  
6V  
6V  
5V  
4V  
5V  
4V  
0
0
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
1.0  
400  
0.0  
-50  
-50  
0.5  
1.0  
1.5  
2.0  
2.5  
VDS - Volts  
VDS - Volts  
Fig. 4. Normalized RDS(on) vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
I
< 550A  
D
6V  
5V  
4V  
0
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case Temperature  
Fig. 5. Normalized RDS(on) vs. Drain Current  
180  
160  
140  
120  
100  
80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
External Lead Current Limit  
TJ = 175ºC  
VGS = 10V  
15V  
60  
TJ = 25ºC  
40  
20  
0
-25  
0
25  
50  
75  
100  
125  
150  
175  
50  
100  
150  
200  
250  
300  
350  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTK550N055T2  
IXTX550N055T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
TJ = 150ºC  
25ºC  
25ºC  
- 40ºC  
150ºC  
0
0
0
50  
100  
150  
200  
250  
300  
2.5  
0.2  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
1.1  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 27.5V  
I
I
D = 275A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
100  
200  
300  
400  
500  
600  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
10  
100.0  
10.0  
1.0  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
External Lead Limit  
C
C
oss  
1ms  
10ms  
rss  
T
T
= 175ºC  
= 25ºC  
J
100ms  
C
DC  
= 1 MHz  
5
f
Single Pulse  
1
0.1  
0
1
10  
100  
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK550N055T2  
IXTX550N055T2  
Fig. 14. Resistive Turn-on Rise Time  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
vs. Drain Current  
48  
46  
44  
42  
40  
38  
36  
34  
32  
48  
46  
44  
42  
40  
38  
36  
34  
32  
RG = 1ꢀ , VGS = 10V  
DS = 27.5V  
RG = 1Ω , VGS = 10V  
V
VDS = 27.5V  
TJ = 125ºC  
I D = 200A  
TJ = 25ºC  
I D = 100A  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
400  
350  
300  
250  
200  
150  
100  
50  
120  
350  
300  
250  
200  
150  
100  
50  
150  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = 10V  
DS = 27.5V  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 27.5V  
105  
90  
75  
60  
45  
30  
15  
0
140  
130  
120  
110  
100  
90  
V
V
I D = 200A  
I D = 200A  
I D = 100A  
I D = 100A  
0
80  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
350  
300  
250  
200  
150  
100  
50  
180  
160  
140  
120  
100  
80  
tf  
td(off) - - - -  
t f  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
DS = 27.5V  
TJ = 125ºC, VGS = 10V  
DS = 27.5V  
V
V
I D = 200A, 100A  
TJ = 125ºC  
TJ = 25ºC  
TJ = 125ºC  
100  
60  
0
40  
40  
60  
80  
120  
ID - Amperes  
140  
160  
180  
200  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTK550N055T2  
IXTX550N055T2  
Fig. 19. Maximum Transient Thermal Impedance  
.sadgsfgsf  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:T_550N055T2(V9)12-07-09  
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