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IXTP10P15T

型号：

IXTP10P15T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

182 K

下载PDF手册
Advance Technical Information  
TrenchPTM  
Power MOSFET  
VDSS = -150V  
ID25 = -10A  
IXTY10P15T  
IXTA10P15T  
IXTP10P15T  
RDS(on)  
≤
350mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-252 (IXTY)  
G
S
D (Tab)  
TO-263 AA (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
-150  
-150  
V
V
VDGR  
G
S
VGSS  
VGSM  
Continuous  
Transient  
+ 15  
+ 25  
V
D (Tab)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
-10  
A
A
TO-220AB (IXTP)  
- 30  
IA  
EAS  
TC = 25°C  
TC = 25°C  
-10  
A
200  
mJ  
PD  
TC = 25°C  
83  
W
G
D
S
D (Tab)  
= Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
Tab = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
z International Standard Packages  
z Avalanche Rated  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
z Extended FBSOA  
z Fast Intrinsic Diode  
z
Low RDS(ON) and QG  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, Unless Otherwise Specified)  
z
Easy to Mount  
Space Savings  
High Power Density  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ± 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
-150  
V
V
z
- 2.0  
- 4.5  
Applications  
±50 nA  
IDSS  
- 3 μA  
-100 μA  
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
TJ = 125°C  
z
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
350 mΩ  
z
z
z
DS100290(10/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTY10P15T IXTA10P15T  
IXTP10P15T  
Symbol  
Test Conditions  
Characteristic Values  
TO-252 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
5
9
S
Ciss  
Coss  
Crss  
2210  
146  
43  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
19  
16  
40  
12  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
3 - Source  
2,4 - Drain  
Inches  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5Ω (External)  
Dim. Millimeter  
Min. Max.  
Min.  
Max.  
A
A1  
2.19 2.38  
0.89 1.14  
0.086  
0.035  
0.094  
0.045  
A2  
b
0
0.13  
0
0.005  
0.035  
Qg(on)  
Qgs  
36  
12  
8
nC  
nC  
nC  
0.64 0.89  
0.025  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
b1  
b2  
0.76 1.14  
5.21 5.46  
0.030  
0.205  
0.045  
0.215  
Qgd  
c
c1  
0.46 0.58  
0.46 0.58  
0.018  
0.018  
0.023  
0.023  
RthJC  
RthCS  
1.5 °C/W  
°C/W  
D
D1  
5.97 6.22  
4.32 5.21  
0.235  
0.170  
0.245  
0.205  
TO-220  
0.50  
E
E1  
6.35 6.73  
4.32 5.21  
0.250  
0.170  
0.265  
0.205  
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
H
L
9.40 10.42  
0.51 1.02  
0.370  
0.020  
0.410  
0.040  
Source-Drain Diode  
L1  
L2  
L3  
0.64 1.02  
0.89 1.27  
2.54 2.92  
0.025  
0.035  
0.100  
0.040  
0.050  
0.115  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
-10  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
- 40  
-1.3  
TO-220 Outline  
trr  
QRM  
IRM  
120  
530  
- 9  
ns  
nC  
A
IF = 0.5 • ID25, -di/dt = -100A/μs  
VR = - 100V, VGS = 0V  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
TO-263 Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
1. Gate  
2. Drain  
3. Source  
4. Drain  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
Bottom Side  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTY10P15T IXTA10P15T  
IXTP10P15T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VGS = -10V  
- 8V  
VGS = -10V  
- 9V  
- 8V  
- 7V  
- 7V  
- 6V  
- 6V  
- 5V  
- 5V  
0
0
-0.5  
-1  
-1.5  
-2  
-2.5  
-3  
0
-5  
-10  
-15  
-20  
-25  
-30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 5A vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = -10V  
VGS = -10V  
- 8V  
- 7V  
I D = -10A  
- 6V  
I D = - 5A  
- 5V  
- 4V  
0
-0.5  
-1  
-1.5  
-2  
-2.5  
-3  
-3.5  
-4  
-4.5  
-5  
-5.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 5A vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-12  
-10  
-8  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
-6  
-4  
TJ = 25ºC  
-2  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
TJ - Degrees Centigrade  
ID - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTY10P15T IXTA10P15T  
IXTP10P15T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-22  
-20  
-18  
-16  
-14  
-12  
-10  
-8  
20  
18  
16  
14  
12  
10  
8
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
6
-6  
4
-4  
2
-2  
0
0
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-7.0  
-1.1  
-40  
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
-22  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-30  
-25  
-20  
-15  
-10  
-5  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = - 75V  
I
I
D = - 5A  
G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
0
4
8
12  
16  
20  
24  
28  
32  
36  
-0.3  
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1.0  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
-
10,000  
1,000  
100  
100  
= 1 MHz  
f
C
iss  
25µs  
RDS(on) Limit  
-
10  
100µs  
1ms  
C
oss  
10ms  
-
1
100ms  
DC  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
C
rss  
-
0.1  
10  
-
-
-
-
1,000  
1
10  
100  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTY10P15T IXTA10P15T  
IXTP10P15T  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
18  
17  
16  
15  
14  
13  
18  
17  
16  
15  
14  
13  
RG = 5Ω, VGS = -10V  
VDS = - 75V  
RG = 5Ω, VGS = -10V  
VDS = - 75V  
TJ = 25ºC  
I D = -10A  
I D = - 5A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
-5  
-5.5  
-6  
-6.5  
-7  
-7.5  
-8  
-8.5  
-9  
-9.5  
-10  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
13.5  
13.0  
12.5  
12.0  
11.5  
11.0  
10.5  
44  
42  
40  
38  
36  
34  
32  
45  
40  
35  
30  
25  
20  
15  
10  
5
45  
40  
35  
30  
25  
20  
15  
10  
5
tf  
t
d(off) - - - -  
t r  
td(on) - - - -  
RG = 5Ω, VGS = -10V  
TJ = 125ºC, VGS = -10V  
VDS = - 75V  
VDS = - 75V  
I D = - 5A  
I D = -10A, - 5A  
I D = - 10A  
0
0
5
10  
15  
20  
25  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
13.6  
13.2  
12.8  
12.4  
12.0  
11.6  
11.2  
10.8  
10.4  
41  
t f  
td(off) - - - -  
tf  
td(off) - - - -  
40  
39  
38  
37  
36  
35  
34  
33  
TJ = 125ºC, VGS = -10V  
VDS = - 75V  
RG = 5Ω, VGS = -10V  
VDS = - 75V  
TJ = 25ºC  
I D = - 5A, -10A  
TJ = 125ºC  
5
10  
15  
20  
25  
-5  
-5.5  
-6  
-6.5  
-7  
-7.5  
-8  
-8.5  
-9  
-9.5  
-10  
ID - Amperes  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTY10P15T IXTA10P15T  
IXTP10P15T  
Fig. 19. Maximum Transient Thermal Impedance  
10  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_10P15T(A1)10-18-10  
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