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IXTP170N13X4

型号：

IXTP170N13X4

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

238 K

下载PDF手册
Advance Technical Information  
X4-Class  
VDSS = 135V  
ID25 = 170A  
RDS(on) 6.30m  
IXTP170N13X4  
Power MOSFETTM  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220  
(IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
135  
135  
V
V
G
D
S
VDGR  
TJ = 25C to 175C, RGS = 1M  
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
ID25  
IL(RMS)  
TC = 25C (Chip Capability)  
External Lead Current Limit  
170  
120  
A
A
IDM  
TC = 25C, Pulse Width Limited by TJM  
340  
A
IA  
TC = 25C  
TC = 25C  
85  
1
A
J
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
V/ns  
W
Features  
480  
International Standard Package  
Low RDS(ON) and QG  
Avalanche Rated  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
-55 ... +175  
Low Package Inductance  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
3
Nm/lb.in  
g
High Power Density  
Weight  
Easy to Mount  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
135  
V
V
2.5  
4.5  
100 nA  
IDSS  
10 A  
TJ = 150C  
500 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
5.15  
6.30 m  
DS100949A(12/18)  
© 2018 IXYS CORPORATION, All Rights Reserved.  
IXTP170N13X4  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 60A, Note 1  
Gate Input Resistance  
70  
120  
0.9  
S
RGi  
Ciss  
Coss  
Crss  
5460  
960  
29  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
720  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
DS = 0.8 • VDSS  
1800  
V
td(on)  
tr  
td(off)  
tf  
26  
8
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
1 - Gate  
2,4 - Drain  
3 - Source  
V
46  
7
RG = 2(External)  
Qg(on)  
Qgs  
105  
30  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
29  
RthJC  
RthCS  
0.31 C/W  
C/W  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
170  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
680  
1.4  
V
trr  
QRM  
IRM  
86  
250  
6
ns  
IF = 85A, -di/dt = 100A/μs  
nC  
VR = 67.5V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTP170N13X4  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
180  
160  
140  
120  
100  
80  
600  
500  
400  
300  
200  
100  
0
V
= 15V  
GS  
V
= 15V  
10V  
GS  
10V  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
60  
40  
6V  
5V  
20  
5V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
5
10  
15  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 85A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
180  
160  
140  
120  
100  
80  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
V
= 10V  
GS  
10V  
9V  
8V  
7V  
6V  
I
= 170A  
D
I
= 85A  
D
60  
5V  
4V  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.5  
1
1.5  
2
2.5  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 85A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
15V  
GS  
BV  
DSS  
o
T = 150 C  
J
V
GS(th)  
o
T = 25 C  
J
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
50  
100 150 200 250 300 350 400 450 500 550 600  
ID - Amperes  
TJ - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved.  
IXTP170N13X4  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
140  
120  
100  
80  
220  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
DS  
External Lead Current Limit  
60  
o
T
J
= 150 C  
40  
60  
o
25 C  
o
40  
- 40 C  
20  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
200  
110  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
350  
300  
250  
200  
150  
100  
50  
220  
200  
180  
160  
140  
120  
100  
80  
o
V
= 10V  
T
= - 40 C  
DS  
J
o
25 C  
o
.
150 C  
o
T
J
= 150 C  
60  
o
T = 25 C  
J
40  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
C
C
iss  
V
= 67.5V  
DS  
I
I
= 85A  
D
G
= 10mA  
oss  
C
rss  
= 1 MHz  
f
10  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
1
10  
100  
1,000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTP170N13X4  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
7
6
5
4
3
2
1
0
1000  
100  
10  
R
Limit  
)
DS(  
on  
25μs  
100μs  
External Lead  
Current Limit  
1ms  
1
10ms  
o
T
J
= 175 C  
DC  
o
T
C
= 25 C  
Single Pulse  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
1
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.5  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2018 IXYS CORPORATION, All Rights Reserved.  
IXYS REF: T_170N13X4 (17-S101) 12-05-18  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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