WT-Z210N-I
Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge
1-2 This specification applies to N-Type silicon Zener diode chip
(ESD) protection application
(Dual pad) Device NO:WT-Z210N-I
2. Structure:
2-1 Planar type: Silicon Diode
2-2 Electrodes:
Top side:Aluminum Alloy(Cathode).
Back side:Isolation Layer.
3. Size:
3-1 Chip size: 11.0 mils 11.0 mils (280 um 280 um).
+
+
3-2 Chip thickness: 6.0 1.0 mils (152 25.4 um).
3-3 Active area: 1/2 7.3 mils 7.3 mils 2 (1/2 186 um 186 um 2).
3-4 Dual Bonding pad: 1/2 6.8 mils 6.8 mils 2 (1/2 173 um 173 um 2).
Hight of Hypotenuse: 5.23 mils(133 um).
3-5 Pattern drawing: Refer to the attached drawing.
4. Electrical Characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
6.4
Typ.
-
Max.
7.6
Unit
V
Zener Voltage
Vz
I
z
=5mA
Forward
Voltage
Vf
1.2
I
F
=20mA
V
100
500
V
V
R
=4V
=5V
Reverse Leakage
Current
nA
I
R
R
Electrostatic
Discharge
HBM
MIL-STD 883
KV
ESD
8.0
5. Drawing:
6. Protection Circuit:
(Dual Bonding pad)
(Top View)
Top side
N
N
LED
Protection
Zener
P-sub
Dual Bonding pad
Back Side
(Isolation Layer)
WEITRON TECHNOLOGY CO., LTD.
TEL:886-2-29148158
FAX:886-2-29106796
Http://www.weitron.com.tw
Bonding pad
28 - Oct - 04
