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IXTK5N250

型号：

IXTK5N250

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

127 K

下载PDF手册
Advance Technical Information  
High Voltage Power  
MOSFET w/ Extended  
FBSOA  
VDSS  
ID25  
RDS(on) < 8.8Ω  
= 2500V  
= 5A  
IXTK5N250  
IXTX5N250  
N-Channel Enhancement Mode  
Avalanche Rated  
Guaranteed FBSOA  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
2500  
2500  
V
V
G
D
S
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
Tab  
ID25  
IDM  
TC = 25°C  
5
A
A
PLUS247 (IXTX)  
TC = 25°C, Pulse Width Limited by TJM  
20  
IA  
TC = 25°C  
TC = 25°C  
2.5  
2.5  
A
J
EAS  
G
D
PD  
TC = 25°C  
960  
W
Tab  
S
TJ  
-55 to +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
-55 to +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
Features  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z Avalanche Rated  
z Fast Intrinsic Diode  
z Guaranteed FBSOA at 75°C  
z Low Package Inductance  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, Unless Otherwise Specified)  
Advantages  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = ±30V, VDS = 0V  
VDS = 2kV, VGS = 0V  
2500  
2.0  
V
V
z
Easy to Mount  
Space Savings  
5.0  
z
±200 nA  
IDSS  
50 μA  
4 mA  
Applications  
TJ = 125°C  
z High Voltage Power Supplies  
z Capacitor Discharge  
z Pulse Circuits  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
8.8  
Ω
DS100280(08/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTK5N250  
IXTX5N250  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 50V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
3.0  
4.5  
6.0  
S
Ciss  
Coss  
Crss  
8560  
315  
90  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
33  
20  
90  
44  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Terminals: 1 - Gate  
2 - Drain  
RG = 1Ω (External)  
3 - Source  
4 - Drain  
Millimeter  
Inches  
Qg(on)  
Qgs  
200  
28  
nC  
nC  
nC  
Dim.  
Min.  
Max.  
Min.  
Max.  
VGS = 10V, VDS = 1000V, ID = 0.5 • ID25  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qgd  
70  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.021  
1.020  
.780  
.056  
.106  
.122  
.033  
1.030  
.786  
RthJC  
RthCS  
0.13 °C/W  
°C/W  
0.15  
c
0.53  
0.83  
D
25.91 26.16  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
Safe Operating Area Specification  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
S
T
3.81  
1.78  
6.04  
1.57  
4.32  
2.29  
6.30  
1.83  
.150  
.070  
.238  
.062  
.170  
.090  
.248  
.072  
VDS = 2000V, ID = 0.11A, TC = 75°C, tp = 3s 220  
W
PLUS247TM Outline  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
5
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
20  
IF = IS, VGS = 0V, Note 1  
1.5  
V
IF = 2.5A, -di/dt = 100A/μs, VR = 100V  
1.2  
μs  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK5N250  
IXTX5N250  
Fig. 2. Output Characteristics @ TJ = 125ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
2.5  
2
5
4.5  
4
VGS = 10V  
VGS = 10V  
3.5  
3
5V  
4V  
1.5  
1
2.5  
2
4V  
3V  
1.5  
1
3V  
0.5  
0
0.5  
0
0
5
10  
15  
20  
25  
30  
35  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 2.5A Value vs.  
Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs.  
Drain Current  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
I D = 5A  
I D = 2.5A  
TJ = 25ºC  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
5
4.5  
4
6
5
4
3
2
1
0
3.5  
3
TJ = 125ºC  
25ºC  
2.5  
2
- 40ºC  
1.5  
1
0.5  
0
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTK5N250  
IXTX5N250  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
8
7
6
5
4
3
2
1
0
TJ = - 40ºC  
25ºC  
125ºC  
6
4
TJ = 125ºC  
2
TJ = 25ºC  
0.9  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
1.0  
1.1  
1.2  
1.3  
ID - Amperes  
VSD - Volts  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10  
8
100,000  
10,000  
1,000  
100  
VDS = 1000V  
= 1 MHz  
f
I
D = 2.5A  
C
I G = 10mA  
iss  
6
C
oss  
4
2
C
rss  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
VDS - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
Fig. 11. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
100  
10  
1
100  
10  
1
RDS(on) Limit  
RDS(on) Limit  
25µs  
100µs  
1ms  
100µs  
1ms  
10ms  
10ms  
TJ = 150ºC  
TJ = 150ºC  
100ms  
TC = 25ºC  
TC = 75ºC  
100ms  
Single Pulse  
Single Pulse  
DC  
DC  
0.1  
0.1  
100  
1,000  
10,000  
100  
1,000  
VDS - Volts  
10,000  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK5N250  
IXTX5N250  
Fig. 13. Maximum Transient Thermal Impedance  
aaaaaa  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXT_5N250(9P)8-13-10-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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