请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTY50N085T

型号：

IXTY50N085T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

171 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTP50N085T  
IXTY50N085T  
VDSS = 85  
ID25 = 50  
RDS(on) ≤ 23 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220 (IXTP)  
D (TAB)  
G
D
S
Symbol  
Test Conditions  
Maximum Ratings  
TO-252 (IXTY)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
85  
85  
V
V
G
VGSM  
Transient  
± 20  
V
S
D (TAB)  
ID25  
IL  
IDM  
TC = 25°C  
50  
25  
130  
A
A
A
Package Current Limit, RMS  
TO-252  
G = Gate  
S = Source  
D = Drain  
TC = 25°C, pulse width limited by TJM  
TAB = Drain  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
10  
250  
A
mJ  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 18 Ω  
3
V/ns  
TC = 25°C  
130  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Advantages  
ꢀ
Easy to mount  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
ꢀ
Space savings  
ꢀ
High power density  
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
Applications  
Automotive  
- Motor Drives  
ꢀ
Weight  
TO-220  
TO-252  
3
0.35  
g
g
- 42V Power Bus  
- ABS Systems  
ꢀ
DC/DC Converters and Off-line UPS  
Symbol  
Test Conditions  
Characteristic Values  
ꢀ
Primary Switch for 24V and 48V  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Systems  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 25 μA  
VGS = ± 20 V, VDS = 0 V  
85  
V
V
High Current Switching  
Applications  
2.0  
4.0  
± 100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
1
μA  
μA  
TJ = 150°C  
100  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2  
23 mΩ  
DS99638 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTP50N085T  
IXTY50N085T  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 (IXTP) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
18  
29  
S
Ciss  
Coss  
Crss  
1460  
220  
52  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
18  
32  
38  
33  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A  
RG = 18 Ω (External)  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
Qg(on)  
Qgs  
34  
10  
10  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A  
Qgd  
RthJC  
RthCS  
1.15°C/W  
°C/W  
TO-220  
0.5  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic  
Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0 V  
50  
130  
1.2  
A
A
ISM  
VSD  
trr  
Repetitive  
Notes:  
1. Pulse test: t ≤ 300 μs, duty cycle  
d ≤ 2 %;  
IF = 25 A, VGS = 0 V, Note 1  
V
IF = 25 A, -di/dt = 100 A/μs  
55  
ns  
2. On through-hole packages, RDS(on)  
Kelvin test contact location must be  
5 mm or less from the package body.  
VR = 40 V, VGS = 0 V  
TO-252 (IXTY) Outline  
Dim. Millimeter  
Inches  
Min. Max. Min.  
Max.  
PRELIMINARYTECHNICAL  
INFORMATION  
A
2.19 2.38 0.086 0.094  
A1 0.89 1.14 0.035 0.045  
A2  
b
0
0.13  
0
0.005  
0.64 0.89 0.025 0.035  
b1  
b2  
0.76 1.14 0.030 0.045  
5.21 5.46 0.205 0.215  
The product presented herein is under  
development. The Technical Specifica-  
tions offered are derived from data  
gathered during objective characteriza-  
tions of preliminary engineering lots; but  
also may yet contain some information  
supplied during a pre-production design  
evaluation. IXYS reserves the right to  
change limits, test conditions, and  
dimensions without notice.  
c
c1  
0.46 0.58 0.018 0.023  
0.46 0.58 0.018 0.023  
D
5.97 6.22 0.235 0.245  
D1 4.32 5.21 0.170 0.205  
6.35 6.73 0.250 0.265  
E1 4.32 5.21 0.170 0.205  
1 Anode  
2 NC  
3 Anode  
4 Cathode  
E
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
H
L
9.40 10.42 0.370 0.410  
0.51 1.02 0.020 0.040  
L1  
L2  
L3  
0.64 1.02 0.025 0.040  
0.89 1.27 0.035 0.050  
2.54 2.92 0.100 0.115  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
7,005,734B2  
7,063,975B2  
7,071,537  
IXTP50N085T  
IXTY50N085T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
140  
120  
100  
80  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
60  
6V  
40  
5V  
20  
5V  
6
0
0
0
2
4
8
10  
12  
14  
16  
18  
20  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 25A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
6V  
I
= 50A  
D
I
= 25A  
D
5V  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 25A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3.8  
3.6  
3.4  
3.2  
3
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
T
J
= 175ºC  
15V - - - -  
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
T
J
= 25ºC  
0
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
10 20  
30 40  
50 60  
70  
80 90 100 110 120  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTP50N085T  
IXTY50N085T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
150ºC  
T
= 150ºC  
J
25ºC  
-40ºC  
0
0
0
5
10 15  
20  
25  
30  
35  
40  
45  
50  
55 60  
3
0.4  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
200  
180  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 43V  
DS  
I
I
= 10A  
D
G
= 1mA  
60  
T
J
= 150ºC  
40  
T
= 25ºC  
1.2  
J
20  
0
0
5
10  
15  
20  
25  
30  
35  
0.6  
0.8  
1
1.4  
1.6  
1.8  
2
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
10.00  
1.00  
0.10  
0.01  
f = 1 MHz  
C
C
iss  
oss  
C
rss  
10  
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTP50N085T  
IXTY50N085T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
46  
44  
42  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
46  
44  
42  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
R
V
V
= 18  
R
V
V
= 18  
Ω
Ω
G
G
= 10V  
= 10V  
GS  
DS  
GS  
DS  
= 42.5V  
= 42.5V  
T
= 25ºC  
J
I
= 30A  
D
T
= 125ºC  
J
I
= 10A  
45  
D
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
25  
35  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
90  
32  
30  
28  
26  
24  
22  
20  
18  
16  
34  
54  
50  
46  
42  
38  
34  
30  
t r  
td(on)  
- - - -  
80  
70  
60  
50  
40  
30  
20  
10  
I
= 10A  
TJ = 125ºC, V  
= 10V  
D
GS  
33  
32  
31  
30  
29  
28  
t f  
R
td(off)  
- - - -  
V
= 42.5V  
DS  
= 18 , V  
= 10V  
GS  
Ω
G
V
= 42.5V  
DS  
I
= 30A  
D
I
= 10A  
D
I
= 30A  
D
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
34  
33  
32  
31  
30  
29  
28  
56  
52  
48  
44  
40  
36  
32  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
150  
140  
130  
120  
110  
100  
90  
t f  
R
V
td(off)  
- - - -  
t f  
td(off)  
- - - -  
= 18 , VGS = 10V  
G
Ω
T
J
= 125ºC, VGS = 10V  
DS = 42.5V  
VDS = 42.5V  
TJ = 125ºC  
80  
I
= 10A  
D
70  
60  
I
= 30A  
D
T
J
= 25ºC  
50  
40  
30  
20  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
RG - Ohms  
ID - Amperes  
© 2006 IXYS CORPORATION All rights reserved  
IXYS REF: T_50N085T (1V) 7-13-06.xls  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.206382s