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IXTF1R4N450

型号：

IXTF1R4N450

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

192 K

下载PDF手册
Advance Technical Information  
High Voltage  
Power MOSFET  
VDSS  
ID25  
= 4500V  
= 1.4A  
IXTF1R4N450  
RDS(on)  40  
(Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
N-Channel Enhancement Mode  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
1
2
Isolated Tab  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
4500  
4500  
V
V
5
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
1 = Gate  
2 = Source  
5 = Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
1.4  
4.2  
A
A
PD  
TC = 25C  
190  
W
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
4500V~ Electrical Isolation  
Molding Epoxies meet UL 94 V-0  
Flammability Classification  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
C  
C  
FC  
Mounting Force  
20..120 / 4.5..27  
N/lb  
V~  
g
VISOL  
Weight  
50/60Hz, 1 Minute  
4500  
6
Advantages  
High Voltage Package  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
Applications  
VGS(th)  
IGSS  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
4.0  
6.0  
V
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
100 nA  
A  
IDSS  
VDS = 3.6kV, VGS = 0V  
VDS = 4.5kV  
5
Laser and X-Ray Generation Systems  
25 μA  
VDS = 3.6kV  
Note 2, TJ = 100C  
25  
μA  
RDS(on)  
VGS = 10V, ID = 50mA, Note 1  
40  
DS100710(02/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTF1R4N450  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 50V, ID = 700mA, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
1.2  
2.0  
S
Ciss  
Coss  
Crss  
3300  
134  
52  
pF  
pF  
pF  
RGi  
7.8  
td(on)  
tr  
td(off)  
tf  
44  
60  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 500V, ID = 0.5 • ID25  
RG = 10(External)  
126  
170  
Qg(on)  
Qgs  
88  
16  
42  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.65C/W  
C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V, Note1  
1.4  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
5.6  
1.5  
V
trr  
QRM  
IRM  
660  
4.6  
14.0  
ns  
IF = 1A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Notes: 1. Pulse test, t 300s, duty cycle, d 2%.  
2. Part must be heatsunk for high-temp IDSS measurement.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTF1R4N450  
Fig. 2. Output Characteristics @ TJ = 125ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 10V  
GS  
V
= 10V  
GS  
7V  
6V  
6.5V  
6V  
5.5V  
5V  
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10  
20  
30  
40  
50  
60  
70  
80  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.7A Value  
vs. Drain Current  
Fig. 3. RDS(on) Normalized to ID = 0.7A Value  
vs. Junction Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
GS  
V
= 10V  
GS  
T = 125ºC  
J
I
= 1.4A  
D
I
= 0.7A  
D
T = 25ºC  
J
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs. Case Temperature  
Fig. 6. Input Admittance  
1.6  
1.4  
1.2  
1
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
T
J
= 125ºC  
25ºC  
- 40ºC  
0.8  
0.6  
0.4  
0.2  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
TC - Degrees Centigrade  
VGS - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTF1R4N450  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T
= - 40ºC  
25ºC  
J
125ºC  
T
J
= 125ºC  
T
J
= 25ºC  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
ID - Amperes  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
10,000  
1,000  
100  
f = 1 MHz  
V
= 1000V  
DS  
I
I
= 0 .7A  
D
G
= 10mA  
C
C
iss  
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VDS - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1
10  
R
DS(  
on  
Limit  
)
25µs  
100µs  
1
0.1  
1ms  
0.1  
0.01  
T = 150ºC  
J
10ms  
T
C
= 25ºC  
Single Pulse  
DC  
100ms  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
100  
1,000  
10,000  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTF1R4N450  
ISOPLUS i4-Pak Outline  
1 = Gate  
2 = Source  
3,4 = Drain  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1R4N450(H8-P640) 2-25-16  
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