请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTP14N60PM

型号：

IXTP14N60PM

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

116 K

下载PDF手册
PolarHVTM Power  
MOSFET  
VDSS = 600V  
ID25 = 7A  
RDS(on) ≤ 550mΩ  
IXTP14N60PM  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
OVERMOLDED  
(IXTP...M) OUTLINE  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1 MΩ  
600  
600  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
7
42  
A
A
G = Gate  
D = Drain  
S = Source  
IA  
EAS  
TC = 25°C  
TC = 25°C  
14  
900  
A
mJ  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C  
TC = 25°C  
10  
75  
V/ns  
W
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
ꢀPlastic overmolded tab for electrical  
isolation  
ꢀInternational standard package  
ꢀAvalanche rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
ꢀFast Intrinsic Diode  
ꢀLow package inductance  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
Weight  
2.5  
g
Advantages  
ꢀ
Easy to mount  
Space savings  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Applications:  
(TJ = 25°C, unless otherwise specified)  
BVDSS  
VGS(th)  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
600  
V
V
ꢀSwitched-mode and resonant-mode  
power supplies  
3.0  
5.5  
ꢀDC-DC Converters  
ꢀLaser Drivers  
ꢀAC and DC motor drives  
ꢀRobotics and servo controls  
IGSS  
IDSS  
VGS = ±30V, VDS = 0V  
±100 nA  
VDS = VDSS  
VGS = 0V  
5 μA  
100 μA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 7A, Note 1  
550 mΩ  
© 2008 IXYS CORPORATION, All rights reserved  
DS99738F(12/08)  
IXTP14N60PM  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
ISOLATED TO-220 (IXTP...M)  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 20V, ID = 7A, Note 1  
7
13  
S
Ciss  
Coss  
Crss  
2500  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
215  
13  
1
2
3
td(on)  
tr  
td(off)  
tf  
23  
27  
70  
26  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 VDSS, ID = 7A  
ꢀ
RG = 10Ω (External)  
Qg(on)  
Qgs  
36  
16  
12  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5  
ꢀ
VDSS, ID = 7A  
Qgd  
Terminals: 1 - Gate  
2 - Drain (Collector)  
RthJC  
1.66 °C/W  
3 - Source (Emitter)  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
VGS = 0V  
Min.  
Typ.  
Max.  
14  
A
A
ISM  
VSD  
trr  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
42  
1.5  
V
IF = 14A, -di/dt = 100A/μs,  
500  
ns  
VR = 100V, VGS = 0V  
Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTP14N60PM  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
30  
27  
24  
21  
18  
15  
12  
9
14  
12  
10  
8
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
7V  
8V  
6
4
6
2
3
7V  
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 7A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
14  
12  
10  
8
3.2  
VGS = 10V  
8V  
VGS = 10V  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
I D = 14A  
7V  
I D = 7A  
6
4
2
6V  
12  
0
-50  
-25  
0
25  
50  
75  
100  
125  
0
2
4
6
8
10  
14  
16  
18  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 7A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
8
7
6
5
4
3
2
1
0
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
ID - Amperes  
TJ - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: F_14N60P(5J)12-22-08-G  
IXTP14N60PM  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
27  
24  
21  
18  
15  
12  
9
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
6
3
0
0
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
1.1  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VDS = 300V  
I D = 7A  
I G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
4
8
12  
16  
20  
24  
28  
32  
36  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
10  
100  
10  
1
R
DS(on)  
Limit  
C
iss  
25µs  
100µs  
C
oss  
1ms  
10ms  
T
J
= 150ºC  
= 25ºC  
C
DC  
rss  
T
C
Single Pulse  
= 1 MHz  
5
f
1
0
0
10  
15  
20  
25  
30  
35  
10  
100  
1000  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
VDS - Volts  
IXTP14N60PM  
Fig. 13. Maximum Transient Thermal Impedance  
10.00  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: F_14N60P(5J)12-22-08-G  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.179265s