IXTP8N65X2M
Symbol
Test Conditions
Characteristic Values
OVERMOLDED TO-220
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
(IXTP...M)
oP
gfs
VDS = 10V, ID = 4A, Note 1
Gate Input Resistance
4.8
8.0
S
RGi
6
Ciss
Coss
Crss
800
495
2.2
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
2
1
3
Effective Output Capacitance
Co(er)
Co(tr)
43
pF
pF
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
129
td(on)
tr
td(off)
tf
24
28
53
24
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 4A
V
Terminals: 1 - Gate
2 - Drain
RG = 30 (External)
3 - Source
Qg(on)
Qgs
12.0
3.1
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 4A
Qgd
4.4
RthJC
RthCS
3.90 C/W
C/W
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
8
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
32
1.4
V
trr
QRM
IRM
200
1.65
16.3
ns
IF = 4A, -di/dt = 100A/μs
μC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
