IXTA2N100
IXTP2N100
Symbol
Test Conditions
Characteristic Values
TO-220 (IXTP) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
1.5
2.5
S
Ciss
Coss
Crss
825
58
15
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
20
23
34
21
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 20Ω (External)
Qg(on)
Qgs
Qgd
18.0
3.7
8.2
nC
nC
nC
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Pins: 1 - Gate
2 - Drain
RthJC
RthCS
1.25 °C/W
°C/W
(TO-220)
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
2
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = 2A, VGS = 0V, Note 1
IF = 2A, -di/dt = 100A/μs, VR = 100V
8
1.5
TO-263 (IXTA) Outline
trr
800
ns
Note 1: Pulse Test, t ≤ 300 μs; Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
