IXTN22N100L
Symbol
TestConditions
Characteristic Values
SOT-227B (IXTN) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • IDSS, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
4.5
7.0
9.5
S
Ciss
Coss
Crss
7050
600
pF
pF
pF
100
td(on)
tr
td(off)
tf
36
35
80
50
ns
ns
ns
ns
Resistive Switching Times
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
RG = 2Ω (External)
Qg(on)
Qgs
270
70
nC
nC
nC
(M4 screws (4x) supplied)
VGS= 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
Qgd
110
RthJC
RthCS
0.18 °C/W
°C/W
0.05
Safe-Operating-AreaSpecification
Symbol
SOA
TestConditions
Characteristic Values
Min.
Typ.
Max.
VDS = 800V, ID = 0.3A, TC = 90°C , tp = 5s
240
W
Source-DrainDiode
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
22
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
50
1.5
V
1000
ns
IF = IS, -di/dt = 100A/μs VR =100V, VGS = 0V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,835,592
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2 6,759,692
6,710,463
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537