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IXTQ60N10T

型号：

IXTQ60N10T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

168 K

下载PDF手册
Advance Technical Information  
TrenchTM  
Power MOSFET  
VDSS = 100V  
ID25 = 60A  
RDS(on) ≤ 18.0mΩ  
IXTQ60N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-3P  
G
D
Symbol  
Test Conditions  
Maximum Ratings  
S
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
Tab  
G = Gate  
S = Source  
D
= Drain  
VGSM  
Transient  
± 30  
V
Tab = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
60  
180  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
10  
A
500  
mJ  
PD  
TC = 25°C  
176  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
z 175°C Operating Temperature  
z Avalanche Rated  
z
Low RDS(on)  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Fast Intrinsic Diode  
z Low Package Inductance  
Md  
Mounting Torque  
1.13/10  
5.5  
Nm/lb.in.  
g
Weight  
Advantages  
z High Power Density  
z Easy to Mount  
z Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
100  
2.5  
Typ.  
Max.  
DC/DC Converters and Off-Line UPS  
Primary Switch for 24V and 48V  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Systems  
z
4.5  
High Current Switching Applications  
Distributed Power Architechtures  
z
± 100 nA  
and VRMs  
Electronic Valve Train Systems  
High Voltage Synchronous Recifier  
z
IDSS  
1 μA  
100 μA  
z
TJ = 150°C  
RDS(on)  
VGS = 10V, ID = 25A, Note 1  
14.8  
18.0 mΩ  
DS100289(10/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTQ60N10T  
Symbol  
Test Conditions  
Characteristic Values  
TO-3P (IXTQ) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
25  
42  
S
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
Ciss  
Coss  
Crss  
td(on)  
tr  
2650  
335  
60  
27  
Resistive Switching Times  
40  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 10A  
td(off)  
tf  
43  
RG = 15Ω (External)  
37  
Qg(on)  
Qgs  
Qgd  
RthJC  
RthCH  
49  
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A  
15  
11  
0.85 °C/W  
°C/W  
0.25  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
60  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 25A, VGS = 0V, Note 1  
240  
1.2  
V
59  
3.8  
ns  
A
IF = 0.5 • IS, VGS = 0V  
-di/dt = 100A/μs  
VR = 0.5 • VDSS  
IRM  
QRM  
112  
nC  
Note  
1. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTQ60N10T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
7V  
8V  
7V  
60  
40  
6V  
6V  
20  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 30A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
8V  
VGS = 10V  
I D = 60A  
7V  
I D = 30A  
6V  
5V  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
2.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 30A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
15V - - - -  
TJ = 175ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
15  
30  
45  
60  
75  
90  
105  
120  
135  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTQ60N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
150ºC  
25ºC  
- 40ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
180  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 50V  
I
D = 10A  
I G = 10mA  
TJ = 150ºC  
60  
TJ = 25ºC  
40  
20  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
1
10,000  
1,000  
100  
= 1 MHz  
f
C
iss  
0.1  
C
oss  
C
rss  
10  
0.01  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTQ60N10T  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
60  
55  
50  
45  
40  
35  
30  
25  
60  
55  
50  
45  
40  
35  
30  
25  
RG = 15Ω, VGS = 10V  
DS = 50V  
RG = 15Ω, VGS = 10V  
DS = 50V  
V
V
TJ = 25ºC  
I D = 30A  
TJ = 125ºC  
I D = 10A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
170  
150  
130  
110  
90  
80  
70  
60  
50  
40  
30  
20  
10  
39  
64  
60  
56  
52  
48  
44  
40  
t r  
t
d(on) - - - -  
38  
37  
36  
35  
34  
33  
TJ = 125ºC, VGS = 10V  
I D = 30A  
I D = 10A  
VDS = 50V  
t f  
t
d(off) - - - -  
RG = 15Ω, VGS = 10V  
10A < I D < 30A  
VDS = 50V  
I D = 10A  
I D = 30A  
70  
50  
30  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
15  
20  
25  
30  
35  
40  
45  
50  
55  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
40  
39  
38  
37  
36  
35  
34  
33  
32  
67  
63  
59  
55  
51  
47  
43  
39  
35  
120  
110  
100  
90  
185  
170  
155  
140  
125  
110  
95  
I D = 10A, 30A  
t f  
t
d(off) - - - -  
t f  
t
d(off) - - - -  
RG = 15Ω, VGS = 10V  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
VDS = 50V  
TJ = 125ºC  
80  
70  
60  
50  
80  
TJ = 25ºC  
40  
65  
30  
50  
15  
20  
25  
30  
35  
40  
45  
50  
55  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
RG - Ohms  
ID - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_60N10T(2V)8-07-08-A  
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