IXFJ 36N30
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Leaded TO-268 Package Outline
VDS = 10 V; ID = 0.5 ID25, pulse test
12
22
S
Ciss
Coss
Crss
2970
530
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
180
td(on)
tr
td(off)
tf
29
130
110
98
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 2 Ω (External)
Qg(on)
Qgs
106 140
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
24
43
40
74
Qgd
RthJC
RthCK
0.65 K/W
K/W
0.24
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
36
A
A
ISM
Repetitive;
pulse width limited by TJM
144
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.8
V
trr
IF = IS, -di/dt = 100 A/µs,
VR = 100 V
TJ = 25°C
TJ = 125°C
200 ns
350 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
