IXTQ 40N50Q
VDSS
ID25
= 500 V
= 40 A
High Current
Power MOSFET
Q-Class
RDS(on) = 0.16 Ω
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, High dv/dt
Data Sheet
Symbol
TestConditions
Maximum Ratings
TO-3P(IXTQ)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
30
40
V
V
G
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
40
160
40
A
A
A
D
S
(TAB)
EAR
EAS
TC = 25°C
50
mJ
mJ
G = Gate
D
= Drain
S = Source TAB = Drain
2.0
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
Features
PD
TC = 25°C
500
W
z IXYS advanced low Qg process
TJ
TJM
Tstg
-55 to +150
150
-55 to +150
°C
°C
°C
z Low gate charge and capacitances
- easier to drive
- faster switching
z International standard packages
z Low RDS (on)
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
z Rated for unclamped Inductive load
switching (UIS) rated
Md
1.13/10 Nm/lb.in.
Weight
6
g
z Molding epoxies meet UL 94 V-0
flammability classification
Advantages
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
z
Easy to mount
Space savings
min.
typ.
max.
z
VDSS
VGS(th)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
500
2.5
V
V
z
High power density
4.5
IGSS
IDSS
VGS = 30 VDC, VDS = 0
100
nA
VDS = V
T
= 25°C
25
1
µA
VGS = 0DVSS
TJJ = 125°C
mA
RDS(on)
V
= 10 V, ID = 0.5 ID25
0.16
Ω
PGuSlse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
DS99056A(08/04)
