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IXTP24N65X2M

型号：

IXTP24N65X2M

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

168 K

下载PDF手册
X2-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 24A  
IXTP24N65X2M  
RDS(on) 145m  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
OVERMOLDED  
TO-220  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
650  
650  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
G
Isolated Tab  
D
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
S = Source  
D = Drain  
ID25  
IDM  
TC = 25C, Limited by TJM  
TC = 25C, Pulse Width Limited by TJM  
24  
48  
A
A
IA  
TC = 25C  
TC = 25C  
12  
A
EAS  
600  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
15  
37  
V/ns  
W
Features  
International Standard Package  
Plastic Overmolded Tab  
Low RDS(ON) and QG  
Avalanche Rated  
2500V~ Electrical Isolation  
Low Package Inductance  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, 1 Minute  
Mounting Torque  
2500  
V~  
Advantages  
Md  
1.13 / 10  
2.5  
Nm/lb.in  
g
High Power Density  
Easy to Mount  
Weight  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250µA  
VDS = VGS, ID = 250µA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.0  
5.0  
100 nA  
A  
Robotics and Servo Controls  
IDSS  
5
TJ = 125C  
100 A  
RDS(on)  
VGS = 10V, ID = 12A, Note 1  
145 m  
DS100696C(10/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTP24N65X2M  
Symbol  
Test Conditions  
Characteristic Values  
OVERMOLDED TO-220  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
(IXTP...M)  
oP  
gfs  
VDS = 10V, ID = 12A, Note 1  
Gate Input Resistance  
13  
22  
S
RGi  
1.1  
Ciss  
Coss  
Crss  
2060  
1470  
1.2  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
2
1
3
Effective Output Capacitance  
Co(er)  
Co(tr)  
83  
pF  
pF  
VGS = 0V  
Energy related  
Time related  
336  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
20  
25  
50  
19  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 12A  
V
Terminals: 1 - Gate  
2 - Drain  
RG = 10(External)  
3 - Source  
Qg(on)  
Qgs  
36  
9
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A  
Qgd  
13  
RthJC  
RthCS  
3.37 C/W  
C/W  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
24  
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
96  
A
1.4  
V
trr  
QRM  
IRM  
390  
3.3  
17  
ns  
IF = 12A, -di/dt = 100A/µs  
VR = 100V  
µC  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTP24N65X2M  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
24  
20  
16  
12  
8
V
= 10V  
V
= 10V  
8V  
GS  
GS  
50  
40  
30  
20  
10  
0
8V  
7V  
7V  
6V  
5V  
6V  
5V  
4
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 12A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
24  
20  
16  
12  
8
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
7V  
I
= 24A  
D
6V  
I
= 12A  
D
4
5V  
4V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 12A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.6  
4.2  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
T = 125oC  
J
V
GS(th)  
T = 25oC  
J
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTP24N65X2M  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
36  
32  
28  
24  
20  
16  
12  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40oC  
25oC  
T
J
= 125oC  
25oC  
- 40oC  
125oC  
4
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
80  
10  
8
V
= 325V  
DS  
70  
60  
50  
40  
30  
20  
10  
0
I
I
= 12A  
D
G
= 10mA  
6
T
J
= 125oC  
4
T
J
= 25oC  
2
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
4
8
12  
16  
20  
24  
28  
32  
36  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Output Capacitance Stored Energy  
Fig. 11. Capacitance  
18  
100000  
10000  
1000  
100  
= 1 MHz  
f
16  
14  
12  
10  
8
C
C
iss  
oss  
6
10  
4
1
2
C
rss  
0.1  
0
1
10  
100  
1000  
0
100  
200  
300  
400  
500  
600  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTP24N65X2M  
Fig. 14. Maximum Transient Thermal Impedance  
Fig. 13. Forward-Bias Safe Operating Area  
10  
1
100  
10  
R
DS(  
on  
Limit  
)
25µs  
100µs  
0.1  
1
1ms  
0.01  
0.1  
0.01  
T
= 150oC  
= 25oC  
J
10ms  
T
C
Single Pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
10  
100  
1,000  
VDS - Volts  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_24N65X2M(X4-S602) 3-24-17  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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