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IXTP08N120P

型号：

IXTP08N120P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

140 K

下载PDF手册
PolarTM  
Power MOSFET  
IXTA08N120P  
IXTP08N120P  
VDSS = 1200V  
ID25 = 0.8A  
RDS(on) ≤ 25Ω  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25°C to 150°C  
1200  
1200  
V
V
(TAB)  
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-220 (IXTP)  
ID25  
IDM  
TC = 25°C  
0.8  
1.8  
A
A
TC = 25°C, pulse width limited by TJM  
IA  
EAS  
TC = 25°C  
TC = 25°C  
0.8  
80  
A
mJ  
(TAB)  
G
D
S
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
50  
V/ns  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
1.6mm (0.062) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
z International standard packages  
z Unclamped Inductive Switching  
(UIS) rated  
z Low package inductance  
- easy to drive and to protect  
TSOLD  
Md  
Mounting torque  
(TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.50  
3.00  
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Applications:  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = ±20V, VDS = 0V  
1200  
V
V
z High Voltage Switched-mode and  
resonant-mode power supplies  
z High Voltage Pulse Power Applications  
z High Voltage Discharge circuits in  
Lasers Pulsers, Spark Igniters, RF  
Generators  
2.5  
4.5  
±50 nA  
μA  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 125°C  
100 μA  
z High Voltage DC-DC converters  
z High Voltage DC-AC inverters  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
20.5  
25 Ω  
DS99868A (04/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA08N120P  
IXTP08N120P  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-220 (IXTP) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS= 30V, ID = 0.5 • ID25, Note 1  
0.38  
0.63  
S
Ciss  
Coss  
Crss  
333  
20  
4.7  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 50Ω (External)  
20  
ns  
26  
55  
24  
ns  
ns  
ns  
Qg(on)  
Qgs  
Qgd  
14.0  
2.0  
8.2  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Pins: 1 - Gate  
2 - Drain  
RthJC  
RthCS  
2.5 °C/W  
°C/W  
(TO-220)  
0.50  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0V  
0.8 A  
ISM  
VSD  
trr  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
2.4 A  
1.5 V  
ns  
IF = 0.8A, -di/dt = 100A/μs,  
900  
TO-263 (IXTA) Outline  
VR = 100V, VGS = 0V  
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
IXTA08N120P  
IXTP08N120P  
Fig. 1. Extended Output Characteristics  
@ 25ºC  
Fig. 2. Output Characteristics  
@ 125ºC  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
VGS = 10V  
6V  
VGS = 10V  
7V  
6V  
5V  
5V  
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
33  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 0.4A Value  
vs. Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 0.4A Value  
vs. Drain Current  
3.0  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
TJ = 125ºC  
I D = 0.8A  
1.8  
1.6  
1.4  
1.2  
1
I D = 0.4A  
TJ = 25ºC  
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
TJ = 125ºC  
25ºC  
- 40ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
TC - Degrees Centigrade  
VGS - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA08N120P  
IXTP08N120P  
Fig. 8. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 7. Transconductance  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
TJ = 25ºC  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
ID - Amperes  
VSD - Volts  
Fig. 9. Capacitance  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
1,000  
100  
10  
VDS = 600V  
I D = 0.4A  
I G = 1mA  
C
iss  
C
oss  
C
rss  
= 1 MHz  
5
f
1
0
2
4
6
8
10  
12  
14  
0
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
VDS - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
10.0  
1.0  
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_08N120P(1C) 4-02-08-A  
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