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IXTN320N10T

型号：

IXTN320N10T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

162 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM Power  
MOSFET  
VDSS = 100V  
ID25 = 320A  
RDS(on) ≤ 3.2mΩ  
IXTN320N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
miniBLOC, SOT-227  
E153432  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
D
D = Drain  
ID25  
ID90  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
TC = 90°C  
Lead Current Limit, RMS  
320  
240  
A
A
G = Gate  
S = Source  
200  
700  
A
A
TC = 25°C, Pulse Width Limited by TJM  
Either Source Terminal S can be Used as  
the Source Terminal or the Kelvin Source  
( Gate Return ) Terminal.  
IA  
TC = 25°C  
TC = 25°C  
80  
A
J
EAS  
2.3  
PD  
TC = 25°C  
680  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
ꢀInternational Standard Package  
ꢀminiBLOC, with Aluminium Nitride  
Isolation  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
ꢀ175°C Operating Temperature  
ꢀHigh Current Handling Capability  
ꢀAvalanche Rated  
VISOL  
50/60 Hz, RMS  
t = 1 Minute  
t = 1 Second  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA  
ꢀ
Low RDS(on)  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
ꢀ
Easy to Mount  
Space Savings  
High Power Density  
ꢀ
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
ꢀ
DC-DC Coverters  
Battery Chargers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ±20V, VDS = 0V  
100  
2.5  
V
ꢀ
4.5  
V
ꢀSwitched-Mode and Resonant-Mode  
Power Supplies  
±200 nA  
ꢀDC Choppers  
ꢀ
IDSS  
VDS = VDSS  
VGS = 0V  
25 μA  
1.5 mA  
AC and DC Motor Drives  
Uninterrupted Power Supplies  
High Speed Power Switching  
Applications  
ꢀ
TJ = 150°C  
ꢀ
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
2.6  
3.2 mΩ  
DS99833A(01/09)  
© 2009 IXYS CORPORATION, All rights reserved  
IXTN320N10T  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXTN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
100  
160  
S
Ciss  
Coss  
Crss  
22.6  
2170  
545  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
37  
168  
50  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
RG = 1Ω (External)  
28  
Qg(on)  
Qgs  
375  
90  
nC  
nC  
nC  
(M4 screws (4x) supplied)  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
120  
RthJC  
RthCS  
0.22 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
320  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1000  
1.3  
trr  
IRM  
100  
6.4  
ns  
A
IF = 100A, VGS = 0V  
-di/dt = 100A/μs, VR = 50V  
QRM  
320  
nC  
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTN320N10T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Output Characteristics  
@ 150ºC  
320  
280  
240  
200  
160  
120  
80  
320  
280  
240  
200  
160  
120  
80  
VGS = 15V  
VGS = 15V  
10V  
8V  
7V  
10V  
8V  
7V  
6V  
6V  
5V  
40  
40  
5V  
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VDS - Volts  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 160A Value  
vs. Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 160A Value  
vs. Drain Current  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 10V  
TJ = 175ºC  
I D = 320A  
VGS = 10V  
15V  
- - - - -  
I D = 160A  
TJ = 25ºC  
0
40  
80  
120  
160  
200  
240  
280  
320  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Drain Current vs. Case Temperature  
Fig. 6. Input Admittance  
220  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
External Lead Current Limit  
TJ = 150ºC  
25ºC  
- 40ºC  
60  
60  
40  
40  
20  
20  
0
0
3.4  
3.8  
4.2  
4.6  
5.0  
5.4  
5.8  
6.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TC - Degrees Centigrade  
VGS - Volts  
© 2009 IXYS CORPORATION, All rights reserved  
IXYS REF: T_320N10T(2x6V)01-27-09  
IXTN320N10T  
Fig. 8. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 7. Transconductance  
280  
240  
200  
160  
120  
80  
280  
240  
200  
160  
120  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
TJ = 25ºC  
40  
40  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
40  
10  
ID - Amperes  
VSD - Volts  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100,000  
10,000  
1,000  
100  
VDS = 50V  
I D = 160A  
I G = 10mA  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
0
40  
80  
120 160 200 240 280 320 360 400  
QG - NanoCoulombs  
VDS - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTN320N10T  
Fig. 12. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 13. Resistive Turn-on  
Rise Time vs. Drain Current  
400  
350  
300  
250  
200  
150  
100  
50  
340  
300  
260  
220  
180  
140  
100  
RG = 1Ω  
GS = 10V  
VDS = 50V  
V
TJ = 25ºC, 125ºC  
I D = 200A  
RG = 1ꢀ  
VGS = 10V  
DS = 50V  
V
I D = 100A  
0
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 14. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 15. Resistive Turn-off  
Switching Times vs. Junction Temperature  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
55  
50  
45  
40  
35  
30  
25  
20  
15  
80  
t r  
td(on) - - - -  
tf  
RG = 1Ω, VGS = 10V  
td(off) - - - -  
75  
70  
65  
60  
55  
50  
45  
40  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
VDS = 50V  
I D = 200A  
I D = 100A, 200A  
I D = 100A  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Drain Current  
350  
300  
250  
200  
150  
100  
50  
240  
210  
180  
150  
120  
90  
38  
36  
34  
32  
30  
28  
26  
24  
100  
90  
80  
70  
60  
50  
40  
30  
tf  
td(off) - - - -  
tf  
RG = 1ꢀ, VGS = 10V  
td(off) - - - -  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
VDS = 50V  
TJ = 125ºC  
I D = 200A  
I D = 100A  
TJ = 25ºC  
60  
0
30  
40  
60  
80  
100  
120  
140  
160  
180  
200  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
ID - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All rights reserved  
IXYS REF: T_320N10T(2x6V)01-27-09  
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