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IXTC200N10T

型号：

IXTC200N10T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

179 K

下载PDF手册
TrenchMVTM Power  
MOSFET  
VDSS = 100V  
ID25 = 101A  
RDS(on) ≤ 6.3mΩ  
IXTC200N10T  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
ISOPLUS220  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
VDGR  
VGSM  
Transient  
± 30  
V
G
Isolated back surface  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
101  
75  
A
A
A
D
S
500  
G = Gate  
D = Drain  
S = Source  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
40  
1.5  
A
J
EAS  
PD  
160  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
Features  
TJM  
Tstg  
ꢀSilicon chip on Direct-Copper Bond  
(DCB) substrate  
ꢀIsolatedmountingsurface  
ꢀ2500Velectricalisolation  
-55 ... +175  
TL  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
VISOL  
Md  
50/60Hz, t = 1 minute, IISOL < 1mA, RMS  
Mountingforce  
2500  
V
Advantages  
11..65 / 2.5..14.6  
2
N/lb.  
g
ꢀ
Easy to mount  
Space savings  
Weight  
ISOPLUS220  
ꢀ
ꢀ
Highpowerdensity  
Applications  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Automotive  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
- MotorDrives  
- High Side Switch  
- 12VBattery  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
100  
2.5  
V
V
- ABS Systems  
4.5  
ꢀ
DC/DC Converters and Off-line UPS  
Primary - Side Switch  
High Current Switching Applications  
±200 nA  
μA  
ꢀ
ꢀ
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
250 μA  
6.3 mΩ  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1  
DS99653A(10/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTC200N10T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
ISOPLUS220 (IXTC) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
60  
96  
S
Ciss  
Coss  
Crss  
9400  
1087  
140  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
35  
31  
45  
34  
ns  
ns  
ns  
ns  
ResistiveSwitchingTimes  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 50A  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
152  
47  
nC  
nC  
nC  
1.Gate  
3.Source  
2.Drain  
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A  
Note: Bottom heatsink (Pin 4) is  
electrically isolated from Pins 1, 2 and 3.  
Qgd  
47  
RthJC  
RthCH  
0.96 °C/W  
°C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
200  
500  
1.0  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 50A, VGS = 0V, Note 1  
trr  
QRM  
IRM  
76  
205  
5.4  
ns  
nC  
A
IF = 100A, VGS = 0V,-di/dt = 100A/μs  
VR = 50V  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTC200N10T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
200  
180  
160  
140  
120  
100  
80  
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
60  
6V  
5V  
40  
20  
5V  
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
VDS - Volts  
0
1
2
3
4
5
6
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 100A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
200  
180  
160  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
6V  
I D = 200A  
I D = 100A  
60  
40  
20  
5V  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 100A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
External Lead Current Limit  
VGS = 10V  
15V  
- - - -  
TJ = 175ºC  
TJ = 25ºC  
0
40  
80  
120  
160  
200  
240  
280  
320  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTC200N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
250  
225  
200  
175  
150  
125  
100  
75  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
60  
40  
50  
20  
25  
0
0
0
25  
50  
75  
100 125 150 175 200 225 250  
ID - Amperes  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
270  
240  
210  
180  
150  
120  
90  
VDS = 50V  
I
I
D = 25A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
60  
30  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
1.00  
100,000  
10,000  
1,000  
100  
= 1MHz  
f
C
iss  
0.10  
C
oss  
C
rss  
0.01  
0.0001  
0
5
10  
15  
20  
25  
30  
35  
40  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSREF:T_200N10T(6V)9-30-08-D  
IXTC200N10T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
RG = 3.3Ω  
RG = 3.3ꢀ  
VGS = 10V  
VDS = 50V  
VGS = 10V  
VDS = 50V  
TJ = 25ºC  
I D = 50A  
TJ = 125ºC  
I D = 25A  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
42  
40  
38  
36  
34  
32  
30  
28  
75  
220  
200  
180  
160  
140  
120  
100  
80  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
t f  
t
d(off) - - - -  
RG = 3.3Ω, VGS = 10V  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
70  
65  
60  
55  
50  
45  
40  
VDS = 50V  
VDS = 50V  
I D = 25A  
I D = 50A  
I D = 25A  
I D = 50A  
60  
40  
20  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
38  
37  
36  
35  
34  
33  
32  
31  
30  
80  
75  
70  
65  
60  
55  
50  
45  
40  
200  
180  
160  
140  
120  
100  
80  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
t f  
t
d(off) - - - -  
RG = 3.3Ω, VGS = 10V  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
TJ = 125ºC  
VDS = 50V  
VDS = 50V  
TJ = 25ºC  
TJ = 25ºC  
I D = 25A  
I D = 50A  
60  
40  
TJ = 125ºC  
20  
0
50  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
2
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
© 2008 IXYS CORPORATION, All rights reserved  
IXYSREF:T_200N10T(6V)9-30-08-D  
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