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IXTA130N15X4A

型号：

IXTA130N15X4A

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

238 K

下载PDF手册
Advance Technical Information  
X4-Class  
VDSS = 150V  
ID25 = 130A  
RDS(on) 8.0m  
IXTA130N15X4A  
Power MOSFETTM  
AEC Q101 Qualified  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263  
(IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
150  
150  
V
V
D (Tab)  
VDGR  
G = Gate  
S = Source  
D
= Drain  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
Tab = Drain  
ID25  
IDM  
TC = 25C  
130  
240  
A
A
TC = 25C, Pulse Width Limited by TJM  
IA  
TC = 25C  
TC = 25C  
65  
A
EAS  
800  
mJ  
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
V/ns  
W
400  
International Standard Package  
Low RDS(ON) and QG  
TJ  
-55 ... +150  
150  
C  
C  
C  
Avalanche Rated  
TJM  
Tstg  
Low Package Inductance  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
FC  
Mounting Force  
TO-263  
10..65 / 2.2..14.6  
2.5  
N/lb  
g
High Power Density  
Easy to Mount  
Space Savings  
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
V
2.5  
4.5  
V
100 nA  
A  
IDSS  
5
TJ = 125C  
200 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1&2  
7.0  
8.0 m  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100938A(9/18)  
IXTA130N15X4A  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
A
C2  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
120  
3.4  
Max  
E
E1  
L1  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
70  
S
D1  
D
4
L2  
H
A1  
RGi  
1
2
3
b
b2  
L3  
c
Ciss  
Coss  
Crss  
4770  
710  
3.5  
pF  
pF  
pF  
e
e
0.43 [11.0]  
0  
VGS = 0V, VDS = 25V, f = 1MHz  
0.34 [8.7]  
0.66 [16.6]  
A2  
Effective Output Capacitance  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
Co(er)  
Co(tr)  
560  
pF  
pF  
VGS = 0V  
VDS = 0.8 • VDSS  
Energy related  
1850  
Time related  
td(on)  
tr  
td(off)  
tf  
20  
27  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
100  
10  
RG = 5(External)  
Qg(on)  
Qgs  
87  
24  
23  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
0.31 C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
130  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
520  
1.4  
V
trr  
QRM  
IRM  
93  
310  
6.7  
ns  
IF = 65A, -di/dt = 100A/μs  
nC  
VR = 75V  
A
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm  
or less from the package body.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTA130N15X4A  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
120  
100  
80  
60  
40  
20  
0
9V  
8V  
8V  
7V  
7V  
6V  
6V  
5V  
5V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 65A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
GS  
120  
100  
80  
60  
40  
20  
0
V
= 10V  
GS  
8V  
7V  
6V  
I
= 130A  
D
I
= 65A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 65A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
o
T = 125 C  
J
o
T = 25 C  
J
V
GS(th)  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
50  
100  
150  
200  
250  
300  
350  
400  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA130N15X4A  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
140  
120  
100  
80  
160  
140  
120  
100  
80  
V
= 10V  
DS  
o
T
J
= 125 C  
o
25 C  
60  
o
- 40 C  
60  
40  
40  
20  
20  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
240  
200  
160  
120  
80  
400  
350  
300  
250  
200  
150  
100  
50  
o
T = - 40 C  
J
V
= 10V  
DS  
o
25 C  
o
125 C  
o
T = 125 C  
J
o
T = 25 C  
J
40  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
1.6  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100,000  
10,000  
1,000  
100  
V
= 75V  
DS  
I
I
= 65A  
D
G
= 10mA  
C
C
iss  
oss  
rss  
C
10  
= 1 MHz  
f
1
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
1
10  
100  
1,000  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
VDS - Volts  
IXTA130N15X4A  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
1000  
100  
10  
7
6
5
4
3
2
1
0
R
Limit  
)
DS(  
on  
25μs  
100μs  
1ms  
o
1
T = 150 C  
J
10ms  
o
T
= 25 C  
DC  
C
Single Pulse  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
160  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_130N15X4 (16-S201) 4-19-18  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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