请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTQ96N25T

型号：

IXTQ96N25T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

172 K

下载PDF手册
Preliminary Technical Information  
TrenchHVTM  
Power MOSFET  
IXTH96N25T  
IXTQ96N25T  
IXTV96N25T  
VDSS = 250V  
ID25 = 96A  
RDS(on) ≤ 29mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
250  
V
(TAB)  
D
S
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
250  
V
VGSM  
Transient  
± 30  
V
TO-3P (IXTQ)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
96  
75  
250  
A
A
A
IAS  
TC = 25°C  
TC = 25°C  
5
2
A
J
G
EAS  
D
S
(TAB)  
PD  
TC = 25°C  
625  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
PLUS220 (IXTV)  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
G
D
S
Md  
Mounting torque (TO-247 & TO-3P)  
Mounting force (PLUS220)  
1.13 / 10  
Nm/lb.in.  
N/lb.  
(TAB)  
FC  
11..65 / 2.5..14.6  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Weight  
TO-247  
TO-3P  
PLUS220  
6.0  
5.5  
4.0  
g
g
g
Features  
z International standard packages  
z Avalanche rated  
z Low package inductance  
- easy to drive and to protect  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C unless otherwise specified)  
Min.  
250  
3
Typ.  
Max.  
z
Easy to mount  
Space savings  
High power density  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
V
V
z
5
± 200 nA  
μA  
Applications  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 125°C  
250 μA  
z DC-DC converters  
z Battery chargers  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
29 mΩ  
z Switched-mode and resonant-mode  
power supplies  
z DC choppers  
z AC motor control  
z Uninterruptible power supplies  
© 2007 IXYS CORPORATION, All rights reserved  
DS99863(09/07)  
IXTH96N25T IXTQ96N25T  
IXTV96N25T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
50  
82  
S
Ciss  
Coss  
Crss  
6100  
625  
75  
pF  
pF  
pF  
1
2
3
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
20  
22  
59  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2.5Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
114  
33  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
Qgd  
34  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
Symbol  
Test Conditions  
Characteristic Values  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
ÆP 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
96  
A
A
V
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
300  
1.5  
TO-3P (IXTQ) Outline  
trr  
IRM  
QRM  
158  
23  
1.8  
ns  
A
μC  
IF = 48A, -di/dt = 250 A/μs  
VR = 100 V,VGS = 0V  
Notes: 1. Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be  
5 mm or less from the package body.  
PLUS220 (IXTV) Outline  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
IXTH96N25T IXTQ96N25T  
IXTV96N25T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0
2
4
6
8
10 12 14 16 18 20 22 24  
VDS - Volts  
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 48A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
5V  
I D = 96A  
I D = 48A  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 48A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
External-Lead Current Limit  
TJ = 125ºC  
TJ = 25ºC  
0
20  
40  
60  
80  
100 120 140 160 180 200  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2007 IXYS CORPORATION, All rights reserved  
IXTH96N25T IXTQ96N25T  
IXTV96N25T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
140  
120  
100  
80  
130  
120  
110  
100  
90  
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
80  
70  
60  
125ºC  
60  
50  
40  
40  
30  
20  
20  
10  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
3.4  
3.8  
4.2  
4.6  
5
5.4  
5.8  
6.2  
6.6  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
200  
180  
160  
140  
120  
100  
80  
VDS = 125V  
I
I
D = 25A  
G = 10mA  
TJ = 125ºC  
60  
TJ = 25ºC  
40  
20  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
10 20 30 40 50 60 70 80 90 100 110 120  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
C
iss  
oss  
C
rss  
f = 1 MHz  
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH96N25T IXTQ96N25T  
IXTV96N25T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
24  
22  
20  
18  
16  
14  
12  
10  
24  
22  
20  
18  
16  
14  
12  
10  
RG = 2.5  
Ω
VGS = 15V  
VDS = 125V  
TJ = 25ºC  
RG = 2.5  
Ω
I D = 96A  
VGS = 15V  
VDS = 125V  
I D = 48A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
45  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
24  
26  
25  
24  
23  
22  
21  
20  
19  
34  
72  
70  
68  
66  
64  
62  
60  
58  
56  
54  
52  
- - - -  
- - - -  
td(off)  
tr  
td(on)  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
tf  
I D = 48A, 96A  
22  
20  
18  
16  
14  
12  
10  
TJ = 125ºC, VGS = 15V  
VDS = 125V  
RG = 2.5 , VGS = 15V  
Ω
VDS = 125V  
I D = 48A  
I D = 96A  
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
32  
30  
28  
26  
24  
22  
20  
18  
16  
68  
66  
64  
62  
60  
58  
56  
54  
52  
70  
60  
50  
40  
30  
20  
10  
160  
140  
120  
100  
80  
- - - -  
td(off)  
tf  
- - - -  
td(off)  
tf  
RG = 2.5  
, VGS = 15V  
Ω
TJ = 125ºC, VGS = 15V  
VDS = 125V  
TJ = 25ºC  
VDS = 125V  
TJ = 125ºC  
I D = 48A, 96A  
TJ = 25ºC  
60  
TJ = 125ºC  
40  
45 50 55 60 65 70 75 80 85 90 95 100  
2
3
4
5
6
7
8
9
10  
RG - Ohms  
ID - Amperes  
© 2007 IXYS CORPORATION, All rights reserved  
IXYS REF: T_96N25T (7W) 08-10-07  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.228915s