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4N55L-TC3-TN3-R

型号：

4N55L-TC3-TN3-R

品牌：

UTC[ Unisonic Technologies ]

页数：

7 页

PDF大小：

369 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
4N55-TC3  
Power MOSFET  
4A, 550V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 4N55-TC3 is a high voltage power MOSFET and is  
designed to have better characteristics, such as fast switching  
time, low gate charge, low on-state resistance and have a high  
rugged avalanche characteristics. This power MOSFET is usually  
used at high speed switching applications in power supplies,  
PWM motor controls, high efficient AC to DC converters and  
bridge circuits.  
1
TO-252  
FEATURES  
* RDS(ON) ≤ 2.9Ω @ VGS=10V, ID=2.5A  
* High Switching Speed  
SYMBOL  
2.Drain  
1.Gate  
3.Source  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
2
Package  
TO-252  
Packing  
Lead Free  
Halogen Free  
4N55G-TN3-R  
D: Drain S: Source  
1
3
4N55L-TN3-R  
G
D
S
Tape Reel  
Note: Pin Assignment: G: Gate  
4N55G-TN3-R  
(1) R: Tape Reel  
(2) TN3: TO-252  
(1)Packing Type  
(2)Package Type  
(3)Green Package  
(3) G: Halogen Free and Lead Free, L: Lead Free  
MARKING  
UTC  
4N55  
L: Lead Free  
G: Halogen Free  
Date Code  
Lot Code  
1
www.unisonic.com.tw  
Copyright © 2019 Unisonic Technologies Co., Ltd  
1 of 7  
QW-R205-585.A  
4N55-TC3  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
550  
±30  
V
Continuous  
4
A
Drain Current (TC=25°C)  
Pulsed (Note 2)  
Single Pulsed  
IDM  
8
44  
A
Avalanche Energy (Note 3)  
EAS  
mJ  
V/ns  
W
Peak Diode Recovery dv/dt (Note 4)  
Power Dissipation  
dv/dt  
PD  
2.2  
50  
Junction Temperature  
TJ  
+150  
-55 ~ +150  
°C  
°C  
Storage Temperature  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
3. L=20mH, IAS=2.1A, VDD=50V, RG=25 Ω, Starting TJ = 25°C.  
4. ISD≤4.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C.  
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
110  
UNIT  
°С/W  
°С/W  
Junction to Ambient  
Junction to Case  
θJC  
2.5 (Note)  
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.  
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
ID=250µA, VGS=0V  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
550  
V
VDS=550V, VGS=0V  
VGS=+30V, VDS=0V  
VGS=-30V, VDS=0V  
10  
µA  
Forward  
+100 nA  
-100 nA  
Gate- Source Leakage Current  
IGSS  
Reverse  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250µA  
VGS=10V, ID=2.0A  
2.0  
4.0  
2.9  
V
Static Drain-Source On-State Resistance  
DYNAMIC PARAMETERS  
Input Capacitance  
Ω
CISS  
COSS  
CRSS  
307  
43  
4
pF  
pF  
pF  
Output Capacitance  
VGS=0V, VDS=25V, f=1.0MHz  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge (Note 1)  
Gate to Source Charge  
Gate to Drain Charge  
QG  
QGS  
QGD  
tD(ON)  
tR  
8.5  
2.8  
1.4  
5
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VDS=440V, VGS=10V, ID=4.0A,  
IG=1mA (Note 1, 2)  
Turn-ON Delay Time (Note 1)  
Rise Time  
15  
28  
24  
VDD=100V, VGS=10V, ID=4.0A,  
RG=25Ω (Note 1, 2)  
Turn-OFF Delay Time  
Fall-Time  
tD(OFF)  
tF  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Maximum Body-Diode Continuous Current  
Maximum Body-Diode Pulsed Current  
Drain-Source Diode Forward Voltage (Note 1)  
Reverse Recovery Time (Note 1)  
IS  
ISM  
VSD  
trr  
4
8
A
A
IS=4.0A, VGS=0V  
IS=4.0A, VGS=0V,  
dIF/dt = 100A/μs  
1.4  
V
304  
1.4  
ns  
μC  
Reverse Recovery Charge  
Qrr  
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.  
2. Essentially independent of operating temperature.  
UNISONICTECHNOLOGIESCO.,LTD  
2 of 7  
QW-R205-585.A  
www.unisonic.com.tw  
4N55-TC3  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
ISD  
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
D=  
P.W.  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONICTECHNOLOGIESCO.,LTD  
3 of 7  
QW-R205-585.A  
www.unisonic.com.tw  
4N55-TC3  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
RL  
VDS  
VDS  
90%  
VGS  
RG  
VDD  
10%  
VGS  
D.U.T.  
tD(ON)  
tD(OFF)  
Pulse Width≤ 1μs  
Duty Factor≤0.1%  
tF  
tR  
Switching Test Circuit  
Switching Waveforms  
VGS  
QG  
Same Type  
as D.U.T.  
QGS  
QGD  
VDS  
VGS  
DUT  
Charge  
Gate Charge Test Circuit  
Gate Charge Waveform  
L
VDS  
BVDSS  
IAS  
RD  
VDD  
ID(t)  
VDS(t)  
VDD  
D.U.T.  
tp  
Time  
tp  
Unclamped Inductive Switching Test Circuit  
Unclamped Inductive Switching Waveforms  
UNISONICTECHNOLOGIESCO.,LTD  
4 of 7  
QW-R205-585.A  
www.unisonic.com.tw  
4N55-TC3  
Power MOSFET  
TYPICAL CHARACTERISTICS  
Drain-Source On-Resistance vs.  
Drain Current vs. Drain-Source Voltage  
Gate-Source Voltage  
20  
15  
10  
5
5
Note:  
1.TA=25°C  
2.Pulse test  
Note:  
1.TA=25°C  
2.Pulse test  
4
3
2
1
0
VGS=6~10V  
ID=2A  
4A  
5V  
0
2
0
4
8
12  
16  
20  
4
6
10  
8
Drain-Source Voltage, VDS (V)  
Gate-Source Voltage, VGS (V)  
Capacitance Characteristics  
Gate Charge Characteristics  
1000  
100  
10  
12  
10  
8
VDS=440V  
VGS=10V  
ID=4A  
CISS  
Pulsed  
COSS  
CRSS  
6
4
2
0
1
45 50  
20 25 30 35 40  
0
5
10  
15  
0
2
4
6
8
10  
Drain-Source Voltage, VDS (V)  
Total Gate Charge, QG (nC)  
Breakdown Voltage vs. Junction  
Temperature  
Drain-Source On-Resistance vs.  
Junction Temperature  
3
1.4  
1.2  
VGS=10V  
ID=2A  
Pulsed  
ID=0.25mA  
Pulsed  
2.5  
2
1.5  
1
1
0.8  
0.5  
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
Junction Temperature, TJ (°C)  
Junction Temperature, TJ (°C)  
UNISONICTECHNOLOGIESCO.,LTD  
5 of 7  
QW-R205-585.A  
www.unisonic.com.tw  
4N55-TC3  
Power MOSFET  
TYPICAL CHARACTERISTICS (Cont.)  
Gate Threshold Voltage vs.  
Junction Temperature  
Source Current vs. Source-Drain  
Voltage  
1.1  
10  
ID=0.25mA  
Pulsed  
1
0.9  
0.8  
0.7  
0.6  
TA=150°C  
25°C  
1
0.1  
0.5  
0.7 0.9 1.1 1.3  
1.5  
25  
50  
75  
100  
125  
150  
0.3  
Source-Drain Voltage, VSD (V)  
Junction Temperature, TJ (°C)  
Drain Current vs. Gate-Source  
Voltage  
Drain-Source On-Resistance vs.  
Drain Current  
4
3
2
1
0
6
5
7
TA=25°C  
VGS=10V  
Pulsed  
TA=25°C  
Pulsed  
3
2
1
0
0
1
2
3
4
5
2
4
6
8
Drain Current, ID (A)  
Gate-Source Voltage, VGS (V)  
Power Dissipation vs. Junction  
Temperature  
Drain Current vs. Junction  
Temperature  
60  
50  
40  
6
TO-252  
4
2
0
30  
20  
10  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75 100 125 150  
Junction Temperature, TJ (°C)  
Junction Temperature, TJ (°C)  
UNISONICTECHNOLOGIESCO.,LTD  
6 of 7  
QW-R205-585.A  
www.unisonic.com.tw  
4N55-TC3  
Power MOSFET  
TYPICAL CHARACTERISTICS (Cont.)  
Safe Operating Area  
10  
1
MAX  
Operation in  
this area is  
limited by  
RDS(ON)  
100us  
1ms  
10ms  
0.1  
0.01  
DC  
TO-252  
TJ=150°C  
TC=25°C  
Single Pulse  
1
10  
100  
1000  
Drain-Source Voltage, VDS (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  
make changes to information published in this document, including without limitation specifications and  
product descriptions, at any time and without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
UNISONICTECHNOLOGIESCO.,LTD  
7 of 7  
QW-R205-585.A  
www.unisonic.com.tw  
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