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IXTT16N10D2

型号：

IXTT16N10D2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

196 K

下载PDF手册
Depletion Mode  
MOSFET  
VDSX = 100V  
ID(on) > 16A  
IXTT16N10D2  
IXTH16N10D2  
RDS(on) 64m  
D
N-Channel  
TO-268 (IXTT)  
G
G
S
S
D (Tab)  
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
100  
100  
V
V
VDGX  
VGSX  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
D (Tab)  
D = Drain  
PD  
TC = 25C  
830  
W
TJ  
TJM  
Tstg  
- 55 ... +175  
175  
- 55 ... +175  
C  
C  
C  
G = Gate  
S = Source  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-268  
TO-247  
4
6
g
g
Features  
• Normally ON Mode  
•International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Advantages  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250A  
VDS = 25V, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSX, VGS = - 5V  
100  
V
V
• Easy to Mount  
• Space Savings  
• High Power Density  
- 2.0  
- 4.5  
100 nA  
A  
IDSX(off)  
5
Applications  
TJ = 150C  
250  A  
64 m  
A
• Audio Amplifiers  
• Start-up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
RDS(on)  
ID(on)  
VGS = 0V, ID = 8A, Note 1  
VGS = 0V, VDS = 25V, Note 1  
16  
DS100258D(7/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTT16N10D2  
IXTH16N10D2  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 8A, Note 1  
7
11  
S
Ciss  
Coss  
Crss  
5700  
1980  
940  
pF  
pF  
pF  
VGS = -10V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
45  
43  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = + 5V, VDS = 50V, ID = 8A  
340  
70  
Terminals: 1 - Gate  
3 - Source  
2,4 - Drain  
RG = 3.3(External)  
Qg(on)  
Qgs  
225  
22  
nC  
nC  
nC  
VGS = + 5V, VDS = 50V, ID = 8A  
Qgd  
126  
RthJC  
RthCS  
0.18C/W  
C/W  
TO-247  
0.21  
Safe-Operating-Area Specification  
Characteristic Values  
Min. Typ. Max.  
Symbol  
SOA  
Test Conditions  
VDS = 100V, ID = 5.6A, TC = 75C, tp = 5s  
556  
W
TO-247 Outline  
D
A
A
0P  
+
B
O 0K M D B M  
E
A2  
A2  
Q
Source-Drain Diode  
S
D2  
+
+
4
R
D1  
D
0P1  
Symbol  
Test Conditions  
Characteristic Values  
1
2
3
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
ixys option  
C
L1  
VSD  
IF = 16A, VGS = -10V, Note 1  
0.80  
1.30  
V
E1  
L
trr  
IRM  
QRM  
205  
8.50  
0.88  
ns  
A
μC  
IF = 8A, -di/dt = 100A/s  
VR = 100V, VGS = -10V  
A1  
b
b2  
c
b4  
PINS: 1 - Gate  
e
+
O
2, 4 - Drain  
3 - Source  
J
M
C
A M  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT16N10D2  
IXTH16N10D2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
16  
14  
12  
10  
8
240  
220  
200  
180  
160  
140  
120  
100  
80  
V
= 5V  
GS  
V
= 5V  
GS  
4V  
3V  
4V  
2V  
1V  
3V  
6
2V  
0V  
4
60  
1V  
-1V  
40  
2
0V  
20  
- 2V  
-1V  
-2V  
0
0
0
0
0
0.05  
0.1  
0.15  
0.2  
0.25  
0.3  
0.6  
50  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
Fig. 4. Drain Current @ TJ = 25oC  
Fig. 3. Output Characteristics @ TJ = 150oC  
16  
14  
12  
10  
8
30  
25  
20  
15  
10  
5
V
= 5V  
2V  
GS  
V
= 0V  
GS  
1V  
0V  
- 0.4V  
- 0.8V  
- 0.5V  
-1V  
6
- 1.2V  
- 1.6V  
4
-1.5V  
2
- 2V  
- 2.5V  
- 2.0V  
- 2.4V  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0
10  
20  
30  
40  
50  
VDS - Volts  
VDS - Volts  
Fig. 5. Drain Current @ TJ = 100oC  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
1.E+10  
1.E+09  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
1.E+04  
1.E+03  
1.E+02  
1.E+01  
30  
25  
20  
15  
10  
5
V
= 50V - 25V  
∆
DS  
V
= 0V  
GS  
- 0.4V  
- 0.8V  
T = 25oC  
J
T = 100oC  
J
- 1.2V  
- 1.6V  
- 2.0V  
- 2.4V  
0
10  
20  
30  
40  
-5  
-4  
-3  
-2  
-1  
0
VGS - Volts  
VDS - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTT16N10D2  
IXTH16N10D2  
Fig. 8. RDS(on) Normalized to ID = 8A Value  
vs. Drain Current  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
I
= 0V  
V
= 0V  
5V  
GS  
GS  
= 8A  
D
T = 25oC  
J
T = 150oC  
J
T = 150oC  
J
T = 25oC  
J
0
5
10  
15  
20  
25  
30  
35  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 9. Input Admittance  
Fig. 10. Transconductance  
60  
50  
40  
30  
20  
10  
0
35  
30  
25  
20  
15  
10  
5
T
= - 40oC  
J
V
= 20V  
DS  
V
= 20V  
DS  
25oC  
150oC  
T
J
= 150oC  
25oC  
- 40oC  
0
0
10  
20  
30  
40  
50  
60  
-4.0  
-3.5  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
0.0  
0.5  
1.0  
1.5  
ID - Amperes  
VGS - Volts  
Fig. 11. Normalized Breakdown and Threshold  
Voltages vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of Intrinsic Diode  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= -10V  
GS  
VGS(off) @ V = 25V  
DS  
BVDSX@ V = - 5V  
GS  
T
J
= 150oC  
T
J
= 25oC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VSD - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTT16N10D2  
IXTH16N10D2  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
5
4
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
V
= 50V  
DS  
I
I
= 8A  
D
G
3
= 10mA  
2
C
C
iss  
1
0
oss  
-1  
-2  
-3  
-4  
-5  
C
rss  
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240  
QG - NanoCoulombs  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25oC  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75oC  
1,000  
100  
10  
1,000  
R
DS(on)  
Limit  
R
DS(on)  
Limit  
25μs  
25μs  
100μs  
100  
100μs  
1ms  
1ms  
10ms  
100ms  
10  
10ms  
DC  
100ms  
T = 175oC  
T = 175oC  
DC  
J
J
= 25oC  
T
C
= 75oC  
T
C
Single Pulse  
Single Pulse  
1
1
1
10  
100  
1
10  
100  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
hvjv  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_16N10D2(8C) 11-21-11-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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