IXTX24N100
Symbol
Test Conditions
Characteristic Values
PLUS 247TM (IXTX) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ. Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
15
27
S
Ciss
Coss
Crss
8700
785
pF
pF
pF
315
td(on)
tr
td(off)
tf
35
35
75
21
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Terminals: 1 - Gate
2 - Drain
3 - Source
Qg(on)
Qgs
267
52
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qgd
142
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
RthJC
RthCS
0.22 °C/W
°C/W
0.15
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
4.32
IS
VGS = 0V
24
A
A
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = 24A, VGS = 0V, Note 1
96
1.5
V
IF = 24A, -di/dt = 100A/μs, VR = 100V, VGS = 0V
850
ns
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
