请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTH12N65X2

型号：

IXTH12N65X2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

212 K

下载PDF手册
Preliminary Technical Information  
X2-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 12A  
RDS(on) 300m  
IXTA12N65X2  
IXTP12N65X2  
IXTH12N65X2  
N-Channel Enhancement Mode  
TO-263 AA (IXTA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220AB (IXTP)  
TJ = 25C to 150C  
650  
650  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
D (Tab)  
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
12  
24  
A
A
TO-247 (IXTH)  
IA  
TC = 25C  
TC = 25C  
6
A
EAS  
300  
mJ  
G
D
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
D (Tab)  
180  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10.65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
2.5  
4.5  
V
Applications  
100 nA  
A  
IDSS  
5
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
TJ = 125C  
50 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
300 m  
Robotics and Servo Controls  
DS100670A(01/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTA12N65X2 IXTP12N65X2  
IXTH12N65X2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
6.6  
11.0  
S
RGi  
4
Ciss  
Coss  
Crss  
1100  
830  
1.5  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
53  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
190  
td(on)  
tr  
td(off)  
tf  
23  
24  
52  
16  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 20(External)  
Qg(on)  
Qgs  
17.7  
5.5  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
5.5  
RthJC  
RthCS  
0.69 C/W  
TO-220  
TO-247  
0.50  
0.25  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
12  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
48  
1.4  
V
trr  
QRM  
IRM  
270  
2.5  
18.5  
ns  
IF = 6A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTA12N65X2 IXTP12N65X2  
IXTH12N65X2  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
12  
10  
8
28  
24  
20  
16  
12  
8
V
= 10V  
7V  
V
= 10V  
8V  
GS  
GS  
7V  
6V  
5V  
6V  
6
4
5V  
4V  
2
4
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 6A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
12  
10  
8
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 12A  
D
6
I
= 6A  
D
5V  
4V  
4
2
0
0
1
2
3
4
5
6
7
8
9
10  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 6A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
T = 125ºC  
J
T = 25ºC  
J
V
GS(th)  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
0
4
8
12  
16  
20  
24  
TJ - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTA12N65X2 IXTP12N65X2  
IXTH12N65X2  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
18  
16  
14  
12  
10  
8
14  
12  
10  
8
T
J
= 125ºC  
25ºC  
- 40ºC  
6
6
4
4
2
2
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
20  
18  
16  
14  
12  
10  
8
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
6
T
J
= 25ºC  
4
2
0
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10000  
1000  
100  
10  
10  
8
V
I
= 325V  
DS  
= 6A  
C
D
iss  
I
= 10mA  
G
6
C
oss  
4
2
= 1 MHz  
f
C
rss  
1
0
1
10  
100  
1000  
0
2
4
6
8
10  
12  
14  
16  
18  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA12N65X2 IXTP12N65X2  
IXTH12N65X2  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
100  
10  
11  
10  
9
R
DS(  
on  
Limit  
25µs  
100µs  
)
8
7
6
1
5
4
1ms  
3
0.1  
0.01  
T
= 150ºC  
= 25ºC  
J
10ms  
2
T
C
Single Pulse  
1
0
10  
100  
1,000  
0
100  
200  
300  
VDS - Volts  
400  
500  
600  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_12N65X2 (X3-S602) 1-06-16  
IXTA12N65X2 IXTP12N65X2  
IXTH12N65X2  
TO-263 Outline  
TO-247 Outline  
TO-220 Outline  
D
A
A
B
E
A2  
Q
S
D2  
P1  
R
D1  
D
4
1
2
3
L1  
C
E1  
1 = Gate  
2 = Drain  
3 = Source  
4 = Drain  
L
A1  
b
C
b2  
1 - Gate  
b4  
e
2,4 - Drain  
3 - Source  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.216695s