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VVZB135-16IOXT

型号：

VVZB135-16IOXT

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

8 页

PDF大小：

491 K

下载PDF手册
VVZB135-16ioXT  
3~  
Rectifier  
Brake  
Chopper  
Thyristor Module  
VRRM  
V V  
CES  
= 1600  
= 1200 V  
A
A
IDAV  
150  
700  
IC25  
120 A  
=
=
=
=
V
1.8  
IFSM  
VCE(sat)  
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC  
Part number  
VVZB135-16ioXT  
Backside: isolated  
30  
29  
24/25  
45/46  
34  
36  
38  
NTC  
3
6/7  
10/11  
14/15  
21/22  
41 40  
48/49  
E2-Pack  
Features / Advantages:  
Applications:  
Package:  
● Package with DCB ceramic  
● 3~ Rectifier with brake unit  
for drive inverters  
● Isolation Voltage:  
● Industry standard outline  
● RoHS compliant  
● Soldering pins for PCB mounting  
● Height: 17 mm  
● Base plate: DCB ceramic  
● Reduced weight  
V~  
3600  
● Improved temperature and power cycling  
● Planar passivated chips  
● Very low forward voltage drop  
● Very low leakage current  
● NTC  
● Advanced power cycling  
Terms and Conditions of Usage  
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and  
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The  
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns  
the specific application of your product, please contact your local sales office.  
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.  
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend  
- to perform joint risk and quality assessments;  
- the conclusion of quality agreements;  
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171130e  
© 2017 IXYS all rights reserved  
VVZB135-16ioXT  
Ratings  
Rectifier  
Symbol  
VRSM/DSM  
Definition  
Conditions  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
1700  
1600  
100  
V
V
max. non-repetitive reverse/forward blocking voltage  
max. repetitive reverse/forward blocking voltage  
VRRM/DRM  
IR/D  
VR/D =1600 V  
VR/D =1600 V  
IT = 50 A  
IT = 150 A  
IT = 50 A  
IT = 150 A  
TC = 85°C  
rectangular  
µA  
reverse current, drain current  
20 mA  
forward voltage drop  
1.32  
V
V
V
V
A
VT  
1.92  
1.26  
1.96  
150  
TVJ  
=
°C  
125  
bridge output current  
threshold voltage  
TVJ = 150°C  
TVJ = 150°C  
IDAV  
d = ⅓  
0.88  
V
VT0  
for power loss calculation only  
slope resistance  
7.3 mΩ  
0.65 K/W  
K/W  
rT  
RthJC  
RthCH  
Ptot  
ITSM  
thermal resistance junction to case  
thermal resistance case to heatsink  
0.10  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
190  
700  
755  
595  
645  
W
A
A
A
A
total power dissipation  
max. forward surge current  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400V f = 1 MHz  
tP = 30 µs  
TVJ = 150°C  
VR = 0 V  
value for fusing  
TVJ = 45°C  
VR = 0 V  
I²t  
2.45 kA²s  
2.37 kA²s  
1.77 kA²s  
1.73 kA²s  
pF  
TVJ = 150°C  
VR = 0 V  
junction capacitance  
TVJ = 25°C  
TC = 150°C  
32  
CJ  
10  
5
W
W
W
PGM  
max. gate power dissipation  
tP = 300 µs  
0.5  
PGAV  
average gate power dissipation  
critical rate of rise of current  
TVJ = 150°C; f = 50 Hz  
repetitive, IT = 150 A  
150 A/µs  
(di/dt)cr  
0.45  
tP = 200 µs;diG /dt =  
A/µs;  
IG = 0.45A; V = ⅔ VDRM  
V = ⅔ VDRM  
non-repet., IT = 50 A  
TVJ = 150°C  
500 A/µs  
critical rate of rise of voltage  
gate trigger voltage  
1000 V/µs  
(dv/dt)cr  
VGT  
RGK = ∞; method 1 (linear voltage rise)  
VD = 6 V  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 150°C  
1.4  
1.6  
V
V
gate trigger current  
VD = 6 V  
80 mA  
IGT  
200 mA  
gate non-trigger voltage  
gate non-trigger current  
latching current  
VD = ⅔ VDRM  
0.2  
5
V
VGD  
IGD  
IL  
mA  
tp = 10 µs  
TVJ = 25°C  
450 mA  
IG = 0.45A; diG/dt = 0.45 A/µs  
VD = 6 V RGK = ∞  
holding current  
TVJ = 25°C  
TVJ = 25°C  
100 mA  
IH  
gate controlled delay time  
VD = ½ V  
2
µs  
µs  
tgd  
DRM  
IG = 0.45A; diG/dt = 0.45 A/µs  
turn-off time  
VR = 100 V; IT = 50 A; V = ⅔ VDRM TVJ =125 °C  
di/dt = 10 A/µs dv/dt = 20 V/µs µs  
150  
tq  
tp = 200  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171130e  
© 2017 IXYS all rights reserved  
VVZB135-16ioXT  
Ratings  
Brake IGBT  
Symbol  
VCES  
Definition  
Conditions  
min. typ. max. Unit  
collector emitter voltage  
TVJ  
=
25°C  
1200  
20  
V
V
max. DC gate voltage  
VGES  
VGEM  
IC25  
max. transient gate emitter voltage  
collector current  
30  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
120  
84  
A
A
IC80  
total power dissipation  
390  
2.1  
W
V
P
tot  
collector emitter saturation voltage  
IC = 75 A; VGE = 15 V  
1.8  
2.1  
6.0  
VCE(sat)  
V
gate emitter threshold voltage  
collector emitter leakage current  
IC = 3 mA; VGE = VCE  
VCE = VCES; VGE = 0 V  
5.5  
6.5  
V
VGE(th)  
ICES  
0.2 mA  
mA  
0.6  
gate emitter leakage current  
total gate charge  
VGE = 20 V  
500  
nA  
nC  
ns  
IGES  
VCE = 600 V; V = 15 V; IC = 75 A  
GE  
230  
70  
QG(on)  
td(on)  
tr  
turn-on delay time  
current rise time  
40  
ns  
inductive load  
TVJ = 125°C  
turn-off delay time  
250  
100  
6.8  
8.3  
ns  
td(off)  
tf  
VCE =600 V; IC = 75 A  
VGE = 15 V; RG = 10 Ω  
current fall time  
ns  
turn-on energy per pulse  
turn-off energy per pulse  
reverse bias safe operating area  
mJ  
mJ  
Eon  
Eoff  
VGE = 15 V; RG = 10 Ω  
TVJ = 125°C  
TVJ = 125°C  
RBSOA  
ICM  
VCEK = 1200 V  
225  
10  
A
short circuit safe operating area  
short circuit duration  
SCSOA  
tSC  
VCEK = 1200 V  
VCE = 900 V; V = 15 V  
GE  
µs  
A
short circuit current  
RG = 10 Ω; non-repetitive  
300  
ISC  
thermal resistance junction to case  
thermal resistance case to heatsink  
0.32 K/W  
K/W  
RthJC  
RthCH  
0.15  
Brake Diode  
max. repetitive reverse voltage  
TVJ = 25°C  
TC = 25°C  
1200  
48  
V
A
A
V
V
VRRM  
IF25  
IF80  
VF  
forward current  
forward voltage  
reverse current  
32  
TC = 80°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
IF = 30 A  
2.75  
1.99  
V = VRRM  
R
0.25 mA  
IR  
1
mA  
µC  
A
reverse recovery charge  
max. reverse recovery current  
reverse recovery time  
VR = 600 V  
-diF /dt = 400A/µs  
IF = 30A  
1.8  
23  
Qrr  
IRM  
trr  
TVJ = 125°C  
150  
ns  
thermal resistance junction to case  
thermal resistance case to heatsink  
0.9 K/W  
K/W  
RthJC  
RthCH  
0.3  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171130e  
© 2017 IXYS all rights reserved  
VVZB135-16ioXT  
Ratings  
Package E2-Pack  
Symbol  
IRMS  
Definition  
Conditions  
min. typ. max. Unit  
per terminal  
200  
150  
125  
125  
A
°C  
°C  
°C  
g
RMS current  
-40  
-40  
-40  
TVJ  
virtual junction temperature  
Top  
operation temperature  
storage temperature  
Tstg  
176  
Weight  
MD  
3
6
Nm  
mounting torque  
terminal to terminal  
terminal to backside  
6.0  
12.0  
mm  
mm  
V
dSpp/App  
dSpb/Apb  
creepage distance on surface | striking distance through air  
t = 1 second  
3600  
3000  
V
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
2D Data Matrix  
XXXXXXXXXX yywwx  
Logo  
UL Part number Date Code Location  
Ordering  
Standard  
Ordering Number  
Marking on Product  
VVZB135-16ioXT  
Delivery Mode  
Quantity Code No.  
VVZB135-16ioXT  
Box  
6
510134  
105  
Temperature Sensor NTC  
Symbol Definition  
Conditions  
min. typ. max. Unit  
104  
resistance  
TVJ = 25°  
4.75  
5
5.25  
kΩ  
R25  
R
temperature coefficient  
3375  
K
B25/50  
[
]
103  
TVJ = 150°C  
Equivalent Circuits for Simulation  
* on die level  
Thyristor  
Brake  
IGBT  
Brake  
Diode  
V0  
102  
I
R0  
0
25  
50  
75  
100 125 150  
TC [°C]  
threshold voltage  
slope resistance *  
0.88  
4.1  
1.1  
1.31  
8
V
V0 max  
R0 max  
Typ. NTC resistance vs. temperature  
17.9  
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171130e  
© 2017 IXYS all rights reserved  
VVZB135-16ioXT  
Outlines E2-Pack  
D
A
3,5 0,5  
Ø 6  
Vor der Montage typ. 100 µm konvex über 75 mm  
Before mounting typ. 100 µm convex over 75 mm  
Detail C  
Detail D  
Ø 2,5-0,3  
Detail A  
Ø 2,1-0,3  
1,5 +0,3  
0,8 0,2  
15° 1°  
1,2 0,05  
93 0,2  
79,2  
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26  
45  
46  
47  
25  
15.24  
11,.43  
24  
23  
0
48  
49  
50  
22  
21  
7,.62  
Index  
11,.43  
20  
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19  
C
0
107,5 0,3  
Bemerkung / Note:  
- Nichttolerierte Maße nach / Measure without tolerances according DIN ISO 2768-T1-m  
- PCB-Lochmuster / PCB hole pattern: see pin position  
- Toleranz Pin-Position und PCB-Lochmuster /Tolerance of pin position and PCB hole pattern:  
- Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024  
0.1  
Detail A: PCB-Montage / Mounting on PCB  
ꢀ
- Empfohlene, selbstschneidende Schraube /Recommended, self-tapping screw:EJOT PT® (Größe / size: K25)  
ꢀ
ꢀ
- Max. Schraubenlänge / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe / hole depth)  
- Empfohlenes Drehmoment /Recommended mounting torque:1.5 Nm  
30  
29  
24/25  
45/46  
34  
36  
38  
NTC  
3
6/7  
10/11  
14/15  
21/22  
41 40  
48/49  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171130e  
© 2017 IXYS all rights reserved  
VVZB135-16ioXT  
Thyristor  
160  
600  
500  
400  
300  
200  
10000  
120  
TVJ = 45°C  
I2t  
1000  
TVJ= 45°C  
IFSM  
[A]  
IF  
80  
TVJ= 150°C  
[A]  
[A2s]  
TVJ = 150°C  
TVJ = 150°C  
40  
TVJ = 125°C  
TVJ 25°C  
=
50Hz, 80% VRRM  
0.001 0.01  
0
0.5  
100  
1.0  
1.5  
2.0  
1
2
3
4
5 6 7 8 9  
0.1  
1
t [ms]  
t [s]  
VF [V]  
Fig. 3 I2t vs. time per thyristor  
Fig. 1 Forward current vs.  
voltage drop per thyristor  
Fig. 2 Surge overload current  
vs. time per thyristor  
10  
1000  
100  
140  
120  
100  
1: I  
, T = 150°C  
GD VJ  
2: I , T  
GT VJ  
= 25°C  
DC =  
1
0.5  
3: I , T = -40°C  
GT VJ  
6
5
0.4  
4
3
0.33  
0.17  
0.08  
IT(AV)M  
2
Limit  
typ.  
VG  
80  
60  
40  
20  
0
tgd  
1
1
[A]  
[V]  
[µs]  
10  
T
= 125°C  
VJ  
4: P  
= 0.5 W  
GAV  
GM  
GM  
5: P  
6: P  
=
=
1 W  
10 W  
0.1  
1
10  
1
10  
100  
1000 10000  
100  
IG [mA]  
1000  
0
25 50 75 100 125 150 175  
TC [°C]  
IG [mA]  
Fig. 5 Gate controlled delay time  
Fig. 4 Gate trigger characteristics  
Fig. 5 Max. forward current vs.  
case temperature per thyristor  
100  
80  
0.8  
RthA  
:
DC =  
1
0.5  
0.2 K/W  
0.4 K/W  
0.6 K/W  
0.8 K/W  
1.0 K/W  
2.0 K/W  
0.4  
0.6  
ZthJC  
0.4  
[K/W]  
0.33  
0.17  
0.08  
Ptot  
60  
40  
20  
0
Constants for ZthJC calc.:  
[W]  
i
Rth (K/W)  
ti (s)  
1
2
3
4
5
0.080  
0.030  
0.160  
0.160  
0.247  
0.004  
0.010  
0.025  
0.400  
0.090  
0.2  
0.0  
0
20  
40  
60  
0
50  
100  
150  
1
10  
100  
t [ms]  
1000  
10000  
IT(AV)M [A]  
Tamb [°C]  
Fig. 4 Power dissipation vs. forward current  
and ambient temperature per thyristor  
Fig. 6 Transient thermal impedance junction to case  
vs. time per thyristor  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171130e  
© 2017 IXYS all rights reserved  
VVZB135-16ioXT  
Brake IGBT  
150  
150  
125  
100  
75  
150  
VGE = 15 V  
13V  
VGE = 15 V  
17 V  
19 V  
11V  
125  
100  
75  
125  
100  
75  
50  
25  
0
TVJ = 25°C  
IC  
IC  
IC  
TVJ = 125°C  
[A]  
[A]  
[A]  
9 V  
50  
25  
0
50  
25  
0
TVJ = 125°C  
TVJ = 125°C  
TVJ = 25°C  
0
1
2
3
0
1
2
3
4
5
6
7
8
9
10 11 12 13  
VGE [V]  
Fig. 3 Typ. tranfer characteristics  
VCE [V]  
Fig. 1 Typ. output characteristics  
VCE [V]  
Fig. 2 Typ. output characteristics  
20  
16  
12  
8
10  
RG  
CE = 600 V  
VGE 15 V  
=
10 Ohm  
IC  
=
75 A  
V
VCE = 600 V  
9
8
7
6
5
=
15  
10  
5
TVJ = 125°C  
Eoff  
VGE  
[V]  
E
E
[mJ]  
[mJ]  
Eon  
Eoff  
IC  
CE = 600 V  
VGE 15 V  
=
75 A  
4
V
Eon  
=
T
VJ = 125°C  
0
0
0
100  
QG [nC]  
Fig. 4 Typ. turn-on gate charge  
200  
300  
0
40  
80  
120  
160  
8
12  
16  
RG [Ohm]  
20 24  
IC [A]  
Fig. 5 Typ. switching energy  
versus collector current  
Fig. 6 Typ. switching energy  
versus gate resistance  
1
ZthJC  
0.1  
[K/W]  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t [s]  
Fig. 7 Typ. transient thermal impedance junction to case  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171130e  
© 2017 IXYS all rights reserved  
VVZB135-16ioXT  
Brake Diode  
80  
5
4
3
2
1
0
60  
50  
40  
30  
20  
10  
0
TVJ = 125°C  
VR = 800 V  
70  
60  
IF = 60 A  
30 A  
15 A  
IF = 60 A  
50  
30 A  
15 A  
IF  
Qr  
IRM  
[A]  
40  
TVJ = 125°C  
25°C  
[A]  
[µC]  
30  
20  
10  
0
TVJ = 125°C  
VR = 800 V  
0
1
2
3
100  
1000  
0
200 400 600 800 1000  
VF [V]  
-diF /dt [A/µs]  
-diF /dt [A/µs]  
Fig. 2 Typ. reverse recovery charge  
Qr versus -diF /dt  
Fig. 3 Typ. peak reverse current  
IRM versus -diF /dt  
Fig. 1 Forward current IF vs. VF  
2.0  
1.5  
1.0  
0.5  
0.0  
220  
120  
100  
80  
60  
40  
20  
0
1.2  
TVJ = 125°C  
VR = 800 V  
TVJ = 125°C  
IF 30 A  
1.0  
200  
180  
160  
140  
120  
=
IF = 60 A  
0.8  
30 A  
15 A  
trr  
VFR  
[V]  
trr  
[µs]  
Kf  
[ns]  
0.4  
0.2  
0.
IRM  
QR  
trr  
VFR  
0
40  
80  
120  
160  
0
200 400 600 800 1000  
0
200 400 600 800 1000  
TVJ [°C]  
-diF /dt [A/µs]  
-diF /dt [A/µs]  
Fig. 4 Dynamic parameters  
Qr, IRM versus TVJ  
Fig. 5 Typ. recovery time  
trr versus -diF /dt  
Fig. 6 Typ. peak forward voltage  
VFR and tfr versus diF/dt  
1
ZthJC  
0.1  
i
R
t
i
[s]  
i
[K/W]  
[K/W]  
1
2
3
0.465 0.0052  
0.179 0.0003  
0.256 0.0397  
0.01  
0.001  
0.01  
0.1  
1
t [s]  
Fig. 7 Transient thermal impedance junction to case  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171130e  
© 2017 IXYS all rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		VVZ110 三相半控整流桥， B6HK[ Three Phase Half Controlled Rectifier Bridge, B6HK ] 2 页

IXYS

 		VVZ110-12IO7 三相半控整流桥， B6HK[ Three Phase Half Controlled Rectifier Bridge, B6HK ] 2 页

IXYS

 		VVZ110-14IO7 三相半控整流桥， B6HK[ Three Phase Half Controlled Rectifier Bridge, B6HK ] 2 页

ETC

 		VVZ110-16IO7 晶闸管模块| 3 -PH HALF -WAVE | CC | 1.6KV五（ RRM ） | 110A I（ T）\n[ THYRISTOR MODULE|3-PH HALF-WAVE|CC|1.6KV V(RRM)|110A I(T) ] 3 页

IXYS

 		VVZ12-12GO1 [ Silicon Controlled Rectifier, 12000mA I(T), 1200V V(RRM), 3 Element ] 1 页

IXYS

 		VVZ12-12IO1 三相半控整流桥[ Three Phase Half Controlled Rectifier Bridge ] 2 页

IXYS

 		VVZ12-14GO1 [ Silicon Controlled Rectifier, 12000mA I(T), 1400V V(RRM), 3 Element ] 1 页

IXYS

 		VVZ12-14IO1 三相半控整流桥[ Three Phase Half Controlled Rectifier Bridge ] 2 页

IXYS

 		VVZ12-16GO1 [ Silicon Controlled Rectifier, 12000mA I(T), 1600V V(RRM), 3 Element ] 1 页

IXYS

 		VVZ12-16IO1 三相半控整流桥[ Three Phase Half Controlled Rectifier Bridge ] 2 页

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