请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTP1N120P

型号：

IXTP1N120P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

141 K

下载PDF手册
Polar VHVTM  
Power MOSFET  
IXTA1N120P  
IXTP1N120P  
VDSS = 1200V  
ID25  
=
1.0A  
RDS(on)  
≤
20Ω  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25°C to 150°C  
1200  
1200  
V
V
(TAB)  
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-220 (IXTP)  
ID25  
IDM  
TC = 25°C  
1.0  
1.8  
A
A
TC = 25°C, pulse width limited by TJM  
IA  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
TC = 25°C  
1.0  
10  
100  
A
mJ  
mJ  
(TAB)  
G
D
S
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
63  
V/ns  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z International standard packages  
z Unclamped Inductive Switching  
(UIS) rated  
z Low package inductance  
- easy to drive and to protect  
TL  
1.6mm (0.062) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
TSOLD  
Md  
Mounting torque  
(TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.50  
3.00  
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Applications:  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = ±20V, VDS = 0V  
1200  
V
V
z Switched-mode and resonant-mode  
power supplies  
2.5  
4.5  
z DC-DC Converters  
z Laser Drivers  
±50 nA  
μA  
z AC and DC motor controls  
z Robotics and servo controls  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 125°C  
200 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
15.5  
20 Ω  
DS99870 (08/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA1N120P  
IXTP1N120P  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 (IXTP) Outline  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
gfs  
VDS= 30V, ID = 0.5 • ID25, Note 1  
0.55 0.92  
S
Ciss  
Coss  
Crss  
550  
25  
5.4  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 30Ω (External)  
20  
ns  
28  
54  
27  
ns  
ns  
ns  
Qg(on)  
Qgs  
Qgd  
17.6  
3.5  
10.6  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Pins: 1 - Gate  
2 - Drain  
RthJC  
RthCS  
2.0 °C/W  
°C/W  
(TO-220)  
0.5  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0V  
1.0 A  
ISM  
VSD  
trr  
Repetitive  
3.0 A  
1.5 V  
ns  
IF = IS, VGS = 0V, Note 1  
IF = 1.0A, -di/dt = 100A/μs,  
900  
VR = 100V, VGS = 0V  
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.  
TO-263 (IXTA) Outline  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTA1N120P  
IXTP1N120P  
Fig. 1. Output Characteristics @ 25ºC  
Fig. 2. Output Characteristics @ 125ºC  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
VGS = 10V  
7V  
VGS = 10V  
6V  
6V  
5V  
5V  
0
5
10  
15  
20  
25  
30  
35  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 0.5A Value  
vs. Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value  
vs. Drain Current  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
I D = 1A  
I D = 0.5A  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1.1  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
TJ = 125ºC  
25ºC  
-40ºC  
3.2 3.4 3.6 3.8  
4
4.2 4.4 4.6 4.8  
VGS - Volts  
5
5.2 5.4 5.6 5.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA1N120P  
IXTP1N120P  
Fig. 8. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 7. Transconductance  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
TJ = 25ºC  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
ID - Amperes  
VSD - Volts  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
1,000  
100  
10  
VDS = 600V  
C
I
I
D = 0.5A  
iss  
G = 10mA  
C
oss  
C
rss  
f = 1 MHz  
5
1
0
2
4
6
8
10  
12  
14  
16  
18  
0
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Maximum Transient Thermal Impedance  
10.0  
1.0  
0.1  
0.0  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_1N120P(2A-245)10-27-06  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.229171s