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IXTP230N04T4M

型号：

IXTP230N04T4M

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

158 K

下载PDF手册
Advance Technical Information  
TrenchT4TM  
Power MOSFET  
VDSS = 40V  
ID25 = 230A  
RDS(on) 2.9m  
IXTP230N04T4M  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Avalanche Rated  
OVERMOLDED  
TO-220  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
40  
40  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
G
VGSM  
Transient  
15  
V
D
S
ID25  
ILRMS  
TC = 25C, Limited by TJM  
Lead Current Limit, RMS  
230  
160  
A
A
G = Gate  
S = Source  
D = Drain  
IDM  
TC = 25C, Pulse Width Limited by TJM  
700  
A
IA  
EAS  
TC = 25C  
TC = 25C  
100  
600  
A
mJ  
PD  
TC = 25C  
40  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
C  
C  
C  
Features  
Plastic Overmolded Tab  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Package  
175°C Operating Temperature  
High Current Handling Capability  
Avalanche Rated  
Md  
Mounting Torque  
(TO-220)  
1.13 / 10  
Nm/lb.in.  
g
Weight  
3
Low RDS(on)  
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
40  
2.0  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
4.0  
• Synchronous Buck Converters  
• High Current Switching Power  
Supplies  
            200 nA  
A  
IDSS  
5
TJ = 150C  
VGS = 10V, ID = 0.5 • ID25, Notes 1,2  
250 A  
2.9 m  
• Battery Powered Electric Motors  
• Resonant-Mode Power Supplies  
• Electronics Ballast Application  
• Class D Audio Amplifiers  
RDS(on)  
DS100812A(3/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTP230N04T4M  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
OVERMOLDED TO-220  
(IXTP...M)  
(TJ = 25C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
100  
170  
1.2  
S
RGi  
Ciss  
Coss  
Crss  
7400  
1115  
760  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
40  
143  
85  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10(External)  
82  
Qg(on)  
Qgs  
140  
35  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
53  
Terminals: 1 - Gate  
2 - Drain  
RthJC  
RthCS  
3.75 C/W  
C/W  
3 - Source  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
230  
920  
1.4  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
32  
1.6  
ns  
A
IF = 115A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/s  
VR = 30V  
25.6  
nC  
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm  
or less from the package body.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXTP230N04T4M  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
240  
200  
160  
120  
80  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
10V  
GS  
V
= 10V  
GS  
9V  
9V  
8V  
8V  
7V  
6V  
7V  
40  
6V  
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
VDS - Volts  
VDS - Volts  
Fig. 4. Normalized RDS(on) to ID = 115A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
240  
200  
160  
120  
80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
V
= 10V  
GS  
10V  
9V  
8V  
7V  
I
D
= 230A  
I
D
= 115A  
6V  
5V  
40  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. Normalized RDS(on) to ID = 115A  
vs. Drain Current  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
DS  
V
= 10V  
15V  
GS  
T
J
= 175oC  
TJ = 150oC  
25oC  
= 25oC  
60  
- 40oC  
T
J
40  
20  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
0
50  
100  
150  
200  
250  
300  
350  
VGS - Volts  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTP230N04T4M  
Fig. 7. Transconductance  
Fig.89. Forward Voltage Drop of Intrinsic Diode  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
T
J
= - 40oC  
V
= 10V  
DS  
25oC  
150oC  
T
J
= 150oC  
T
J
= 25oC  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
ID - Amperes  
VSD - Volts  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
V
= 20V  
DS  
C
iss  
I
I
= 115A  
= 10mA  
D
G
C
oss  
C
rss  
= 1 MHz  
f
0
20  
40  
60  
80  
100  
120  
140  
0
5
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
VDS - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
10  
1
1,000  
100  
10  
R
Limit  
DS(on)  
25μs  
100μs  
External Lead  
Current Limit  
0.1  
T = 175oC  
J
0.01  
= 25oC  
1ms  
T
C
10ms  
Single Pulse  
DC  
100ms  
1
0.001  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXTP230N04T4M  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
200  
180  
160  
140  
120  
100  
200  
180  
160  
140  
120  
100  
R
= 10ꢀ , V = 10V  
R = 10Ω , V = 10V  
G GS  
G
GS  
V
= 20V  
V
= 20V  
DS  
DS  
I
I
= 230A  
= 115A  
D
D
T
J
= 25oC  
T
J
= 150oC  
25  
50  
75  
100  
125  
150  
110  
130  
150  
170  
190  
210  
230  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
300  
140  
120  
100  
80  
130  
270  
240  
210  
180  
150  
120  
90  
t r  
td(on)  
t f  
td(off)  
120  
110  
100  
90  
TJ = 150oC, V = 10V  
R
= 10Ω, V = 10V  
GS  
G
GS  
V
= 20V  
V
= 20V  
DS  
DS  
I
= 115A  
D
I
= 115A  
D
60  
I
= 230A  
D
40  
80  
I
= 230A  
D
60  
20  
70  
30  
0
60  
0
25  
50  
75  
100  
125  
150  
10  
20  
30  
40  
50  
60  
70  
80  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
110  
105  
100  
95  
140  
130  
120  
110  
100  
90  
600  
500  
400  
300  
200  
100  
0
650  
550  
450  
350  
250  
150  
50  
t f  
td(off)  
t f  
td(off)  
R
G
= 10ꢀ, VGS = 10V  
T
= 150oC, V = 10V  
J GS  
VDS = 20V  
V
= 20V  
DS  
T
J
= 150oC  
I = 230A  
D
I
= 115A  
D
90  
85  
80  
80  
T
J
= 25oC  
75  
70  
70  
60  
10  
20  
30  
40  
50  
60  
110  
130  
150  
170  
190  
210  
230  
ID - Amperes  
RG - Ohms  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_230N04T4 (T4-M04) 3-13-17-A  
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