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IXTA26P20PTR

型号：

IXTA26P20PTR

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

156 K

下载PDF手册
PolarPTM  
Power MOSFETs  
IXTA26P20P  
IXTP26P20P  
IXTQ26P20P  
IXTH26P20P  
VDSS = - 200V  
ID25 = - 26A  
RDS(on)  
≤
170mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
TO-220AB (IXTP)  
TO-3P (IXTQ)  
G
S
G
D
S
G
D
D (Tab)  
S
D (Tab)  
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 200  
- 200  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
D (Tab)  
D = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 26  
- 70  
A
A
G = Gate  
IA  
TC = 25°C  
TC = 25°C  
- 26  
1.5  
A
J
S = Source  
Tab = Drain  
EAS  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
Features  
300  
z International Standard Packages  
z Avalanche Rated  
z Rugged PolarPTM Process  
z Low Package Inductance  
z Fast Intrinsic Diode  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-3P,TO-220 &TO-247)  
1.13/10  
Nm/lb.in.  
Advantages  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
z
Easy to Mount  
Space Savings  
z
TO-247  
z
High Power Density  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
- 200  
- 2.0  
Typ.  
Max.  
z
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
z
z
- 4.0  
z
±100 nA  
z
Current Regulators  
IDSS  
- 10 μA  
-150 μA  
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
170 mΩ  
DS99913D(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA26P20P IXTP26P20P  
IXTQ26P20P IXTH26P20P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = -25V, f = 1MHz  
10  
17  
S
Ciss  
Coss  
Crss  
2740  
540  
pF  
pF  
pF  
100  
td(on)  
tr  
td(off)  
tf  
18  
33  
46  
21  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
56  
18  
20  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
(TO-3P & TO-247)  
(TO-220)  
0.21  
0.50  
°C/W  
Safe Operating Area Specification  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
VDS = - 200V, ID = - 0.8A, TC = 70°C, Tp = 5s 160  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 26  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = -13A, VGS = 0V, Note 1  
- 104  
- 3.2  
trr  
QRM  
IRM  
240  
2.2  
-18.0  
ns  
μC  
A
IF = -13A, -di/dt = -100A/μs  
VR = -100V, VGS = 0V  
Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA26P20P IXTP26P20P  
IXTQ26P20P IXTH26P20P  
TO-220 Outline  
TO-263 Outline  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Bottom  
Side  
Pins: 1 - Gate  
2 - Drain  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
TO-3P Outline  
TO-247 Outline  
∅ P  
1
2
3
e
Terminals: 1 - Gate  
2 - Drain  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
4.32  
5.49 .170 .216  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA26P20P IXTP26P20P  
IXTQ26P20P IXTH26P20P  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ= 25ºC  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
-28  
-24  
-20  
-16  
-12  
-8  
VGS = -10V  
- 8V  
VGS = -10V  
- 9V  
-7V  
- 8V  
- 6V  
- 7V  
- 6V  
- 5V  
- 5V  
-4  
0
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
-4.5  
0
-5  
-10  
-15  
-20  
-25  
-30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = -13A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
-28  
-24  
-20  
-16  
-12  
-8  
VGS = -10V  
- 8V  
VGS = -10V  
- 7V  
- 6V  
I D = - 26A  
I D = -13A  
- 5V  
-4  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = -13A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-28  
-24  
-20  
-16  
-12  
-8  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
-4  
0
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA26P20P IXTP26P20P  
IXTQ26P20P IXTH26P20P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
32  
28  
24  
20  
16  
12  
8
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
125ºC  
25ºC  
125ºC  
4
0
0
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-7.0  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-80  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = -100V  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
I
I
D = -13A  
G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
10,000  
1.00  
0.10  
0.01  
C
iss  
1,000  
100  
10  
C
oss  
C
rss  
= 1 MHz  
-5  
f
0.0001  
0.001  
0.01  
0.1  
1
10  
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
VDS - Volts  
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA26P20P IXTP26P20P  
IXTQ26P20P IXTH26P20P  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 70ºC  
-
-
100.0  
100.0  
25µs  
R
Limit  
DS(on)  
R
Limit  
25µs  
DS(on)  
100µs  
100µs  
-
10.0  
10.0  
-
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
-
-
-
100ms  
1.0  
1.0  
0.1  
DC  
T
T
= 150ºC  
= 70ºC  
T
T
= 150ºC  
= 25ºC  
J
J
C
C
Single Pulse  
Single Pulse  
-
0.1  
-
-
100  
-1  
-10  
-100  
- 1000  
-1  
10  
-1000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_26P20P(B5)7-28-09-C  
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