IXTK102N65X2
IXTX102N65X2
Symbol
Test Conditions
Characteristic Values
TO-264P Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
E1
A
E
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
50
82
S
Q
RGi
0.7
R
Q1
D1
D
Ciss
Coss
Crss
10.9
6100
12.6
nF
pF
pF
R1
4
1
VGS = 0V, VDS = 25V, f = 1MHz
2
3
L1
D2
Effective Output Capacitance
Co(er)
Co(tr)
367
pF
pF
c
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
b1
1420
b
A
b2
e
x2
Terminals:
1
= Gate
2,4 = Drain
= Source
td(on)
tr
td(off)
tf
37
28
67
11
ns
ns
ns
ns
3
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
RG = 2(External)
Qg(on)
Qgs
152
57
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
33
RthJC
RthCS
0.12 C/W
C/W
0.15
Source-Drain Diode
PLUS247TM Outline
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
102
408
1.4
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS , VGS = 0V, Note 1
trr
450
11.7
52
ns
μC
A
IF = 51A, -di/dt = 100A/s
QRM
IRM
VR = 100V, VGS = 0V
Terminals: 1 - Gate
2,4 - Drain
3 - Source
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
