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IXTN400N15X4

型号：

IXTN400N15X4

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

205 K

下载PDF手册
Advance Technical Information  
X4-Class  
VDSS = 150V  
ID25 = 400A  
RDS(on) 2.7m  
IXTN400N15X4  
Power MOSFETTM  
D
G
S
N-Channel Enhancement Mode  
Avalanche Rated  
S
miniBLOC, SOT-227  
E153432  
S
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
150  
150  
V
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
S
D
D = Drain  
ID25  
IL(RMS)  
IDM  
TC = 25C (Chip Capability)  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
400  
200  
900  
A
A
A
G = Gate  
S = Source  
IA  
EAS  
TC = 25C  
TC = 25C  
200  
3
A
J
PD  
TC = 25C  
1070  
10  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
C  
C  
C  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
Isolation Voltage 2500 V~  
High Current Handling Capability  
Low QG  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Avalanche Rated  
Low Package Inductance  
Weight  
30  
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
150  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
Power Supplies  
200 nA  
25 A  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
TJ = 150C  
2
mA  
RDS(on)  
VGS = 10V, ID = 100A, Note 1  
2.0  
2.7 m  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100910A(6/18)  
IXTN400N15X4  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXTN) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
170  
1.2  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
100  
S
RGi  
Ciss  
Coss  
Crss  
14.5  
3.1  
nF  
nF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
8.0  
Effective Output Capacitance  
Co(er)  
Co(tr)  
2500  
9400  
pF  
pF  
VGS = 0V  
Energy related  
Time related  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
40  
22  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
(M4 screws (4x) supplied)  
V
180  
8
RG = 1(External)  
Qg(on)  
Qgs  
430  
100  
100  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.14C/W  
0.05C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
400  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A , VGS = 0V, Note 1  
1600  
1.4  
trr  
175  
1.1  
ns  
μC  
A
IF = 150A, -di/dt = 100A/s  
QRM  
IRM  
VR = 100V, VGS = 0V  
12.3  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTN400N15X4  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
400  
350  
300  
250  
200  
150  
100  
50  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
V
= 10V  
GS  
9V  
V
= 10V  
8V  
GS  
8V  
7V  
7V  
6V  
5V  
6V  
5V  
0
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 200A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 400A  
D
I
= 200A  
D
5V  
4V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 200A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
BV  
DSS  
o
T = 150 C  
J
o
T = 25 C  
J
V
GS(th)  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
120  
140  
160  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTN400N15X4  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
240  
200  
160  
120  
80  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
DS  
External Lead Current Limit  
o
T
J
= 150 C  
o
25 C  
o
- 40 C  
40  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
450  
450  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
800  
700  
600  
500  
400  
300  
200  
100  
0
o
V
= 10V  
T = - 40 C  
J
DS  
o
T = 25 C  
J
o
25 C  
o
T = 150 C  
J
o
150 C  
0
0
50  
100  
150  
200  
250  
300  
350  
400  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
V
= 75V  
DS  
C
C
C
iss  
I
I
= 200A  
= 10mA  
D
G
oss  
rss  
10  
= 1 MHz  
f
1
0
50  
100  
150  
200  
250  
300  
350  
400  
1
10  
100  
1,000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTN400N15X4  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
28  
24  
20  
16  
12  
8
1000  
100  
10  
R
Limit  
)
DS(  
on  
25μs  
100μs  
External  
Lead Limit  
1ms  
o
T = 175 C  
J
o
T
C
= 25 C  
4
10ms  
Single Pulse  
DC  
100  
100ms  
0
1
0
20  
40  
60  
80  
100  
120  
140  
1
10  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.2  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_400N15X4 (191) 6-19-18  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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