请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTP260N055T2

型号：

IXTP260N055T2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

244 K

下载PDF手册
TrenchT2TM  
PowerMOSFET  
IXTA260N055T2  
IXTP260N055T2  
VDSS = 55V  
ID25 = 260A  
RDS(on) ≤ 3.3mΩ  
N-Channel Enhancement Mode  
AvalancheRated  
TO-263(IXTA)  
Symbol  
VDSS  
TestConditions  
MaximumRatings  
G
S
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
55  
55  
V
V
(TAB)  
VDGR  
VGSM  
Transient  
±20  
V
TO-220(IXTP)  
ID25  
TC =25°C  
Lead Current Limit, RMS  
TC = 25°C, Pulse Width Limited by TJM  
260  
120  
780  
A
A
A
ILRMS  
IDM  
G
D
IA  
TC =25°C  
TC =25°C  
TC =25°C  
100  
600  
480  
A
mJ  
W
(TAB)  
S
EAS  
PD  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +175  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
ꢀInternational Standard Packages  
ꢀ175°C Operating Temperature  
ꢀHigh Current Handling Capability  
ꢀAvalancheRated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
ꢀ
Low RDS(on)  
Advantages  
ꢀ
Easy to Mount  
SpaceSavings  
High Power Density  
ꢀ
Symbol  
TestConditions  
Characteristic Values  
ꢀ
(TJ = 25°C uUnless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
55  
V
V
Applications  
2.0  
4.0  
ꢀAutomotive Engine Drive  
±200 nA  
μA  
ꢀSynchronous Buck Converter  
IDSS  
VDS = VDSS  
VGS = 0V  
5
ꢀDC and DC Converters  
TJ = 150°C  
150 μA  
3.3 mΩ  
ꢀHigh Current Switching Applications  
ꢀPower Train Management  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1, 2  
ꢀDistributed Power Architecture  
DS100028A(01/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTA260N055T2  
IXTP260N055T2  
Symbol  
TestConditions  
CharacteristicValues  
Min. Typ. Max.  
TO-263 (IXTA) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
55  
94  
S
Ciss  
Coss  
Crss  
10.8  
1460  
215  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
20  
27  
36  
24  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
RG = 2Ω (External)  
Qg(on)  
Qgs  
140  
52  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
32  
RthJC  
RthCH  
0.31 °C/W  
°C/W  
TO-220  
0.50  
Source-DrainDiode  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
260  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1000  
1.3  
TO-220 (IXTP) Outline  
trr  
IRM  
60  
3.4  
ns  
A
IF = 130A, VGS = 0V  
-di/dt = 100A/μs  
VR = 27V  
QRM  
102  
nC  
Notes: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
2. On Through-Hole Packages, RDS(on) Kelvin Test Contact  
Location must be 5mm or Less from the Package Body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072  
4,881,106  
4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405 B2 6,759,692  
6,710,463  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA260N055T2  
IXTP260N055T2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
9V  
10V  
9V  
8V  
8V  
7V  
6V  
7V  
6V  
5V  
60  
40  
5V  
20  
0
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.6  
350  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 150ºC  
Fig. 4. RDS(on) Normalized to ID = 130A Value  
vs. Junction Temperature  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 260A  
7V  
6V  
I D = 130A  
60  
40  
5V  
20  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 130A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.2  
2.1  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
140  
External Lead Current Limit  
TJ = 175ºC  
120  
100  
80  
60  
40  
20  
0
VGS = 10V  
15V - - - -  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100 125 150 175 200  
0
50  
100  
150  
200  
250  
300  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTA260N055T2  
IXTP260N055T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
60  
60  
40  
40  
20  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
0
0
1
20  
40  
60  
80 100 120 140 160 180 200 220  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
360  
320  
280  
240  
200  
160  
120  
80  
VDS = 28V  
I D = 130A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
40  
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4  
VSD - Volts  
10 20 30 40 50 60 70 80 90 100 110 120 130 140  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1,000  
100  
10  
100,000  
10,000  
1,000  
100  
RDS( ) Limit  
on  
= 1 MHz  
f
25µs  
C
iss  
100µs  
External Lead Current Limit  
C
1ms  
oss  
TJ = 175ºC  
TC = 25ºC  
Single Pulse  
10ms  
C
rss  
100ms  
DC  
1
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_260N055T2(V6)12-15-08-B  
IXTA260N055T2  
IXTP260N055T2  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
32  
31  
30  
29  
28  
27  
26  
25  
24  
RG = 2Ω  
RG = 2Ω  
GS = 10V  
VDS = 28V  
VGS = 10V  
V
TJ = 125ºC  
VDS = 28V  
I D = 200A  
I D = 100A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
40  
60  
80  
100  
120  
140  
160  
180  
200  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
55  
60  
55  
50  
45  
40  
35  
30  
25  
20  
t r  
t
d(on) - - - -  
tf  
RG = 2Ω, VGS = 10V  
t
d(off) - - - -  
50  
45  
40  
35  
30  
25  
20  
15  
TJ = 125ºC, VGS = 10V  
DS = 28V  
V
VDS = 28V  
I D = 200A, 100A  
I D = 200A, 100A  
60  
40  
20  
0
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
2
4
6
8
10  
12  
14  
16  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
44  
40  
36  
32  
28  
24  
20  
16  
12  
8
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
275  
250  
225  
200  
175  
150  
125  
100  
75  
240  
220  
200  
180  
160  
140  
120  
100  
80  
tf  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
RG = 2Ω, VGS = 10V  
DS = 28V  
TJ = 125ºC, VGS = 10V  
DS = 28V  
V
V
TJ = 125ºC  
I D = 100A, 200A  
TJ = 25ºC  
50  
60  
25  
40  
0
20  
2
4
6
8
10  
12  
14  
16  
40  
60  
80  
100  
120  
140  
160  
180  
200  
RG - Ohms  
ID - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTA260N055T2  
IXTP260N055T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_260N055T2(V6)12-15-08-B  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.188201s