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WV3HG64M72AER403AD6SG

型号:

WV3HG64M72AER403AD6SG

品牌:

MICROSEMI[ Microsemi ]

页数:

10 页

PDF大小:

180 K

WV3HG64M72AER-AD6  
White Electronic Designs  
ADVANCED*  
512MB – 64Mx72 DDR2 SDRAM REGISTERED, w/PLL  
FEATURES  
DESCRIPTION  
„
240-pin, dual in-line memory module  
The WV3HG64M72AER is a 64Mx72 Double Data  
Rate DDR2 SDRAM high density module. This memory  
module consists of eighteen 64Mx4 bit with 4 banks DDR2  
Synchronous DRAMs in FBGA packages, mounted on a  
240-pin DIMM FR4 substrate.  
„
Fast data transfer rates: PC2-6400*, PC2-5300*,  
PC2-4300 and PC2-3200  
„
Utilizes 800, 667, 533 and 400 MT/s DDR2 SDRAM  
components  
„
„
„
„
„
„
VCC = VCCQ = 1.8V  
* This product is under development, is not qualied or characterized and is subject to  
change or cancellation without notice.  
JEDEC standard 1.8V I/O (SSTL_18-compatible)  
Differential data strobe (DQS, DQS#) option  
Four-bit prefetch architecture  
NOTE: Consult factory for availability of:  
• Vendor source control options  
• Industrial temperature option  
DLL to align DQ and DQS transitions with CK  
Multiple internal device banks for concurrent  
operation  
„
„
„
„
„
„
„
„
„
„
„
Supports duplicate output strobe (RDQS/RDQS#)  
Programmable CAS# latency (CL): 3, 4, 5 and 6  
Adjustable data-output drive strength  
On-die termination (ODT)  
Posted CAS# latency: 0, 1, 2, 3 and 4  
Serial Presence Detect (SPD) with EEPROM  
64ms: 8,192 cycle refresh  
Gold edge contacts  
Product is lead-free  
RoHS compliant  
Package option  
• 240 Pin DIMM  
• PCB – 18.29mm (0.720") Max  
OPERATING FREQUENCIES  
PC2-3200  
200MHz  
3-3-3  
PC2-4300  
266MHz  
4-4-4  
PC2-5300*  
333MHz  
5-5-5  
PC2-6400*  
400MHz  
6-6-6  
Clock Speed  
CL-tRCD-tRP  
* Consult factory for availability  
October 2006  
Rev. 2  
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M72AER-AD6  
White Electronic Designs  
ADVANCED  
PIN CONFIGURATION  
PIN NAMES  
Pin No.  
1
Symbol  
VREF  
VSS  
Pin No.  
Symbol  
Pin No.  
121  
122  
123  
124  
125  
126  
127  
128  
129  
130  
131  
132  
133  
134  
135  
136  
137  
138  
139  
140  
141  
142  
143  
144  
145  
146  
147  
148  
149  
150  
151  
152  
153  
154  
155  
156  
157  
158  
159  
160  
161  
162  
163  
164  
165  
166  
167  
168  
169  
170  
171  
172  
173  
174  
175  
176  
177  
178  
179  
180  
Symbol  
Pin No.  
181  
182  
183  
184  
185  
186  
187  
188  
189  
190  
191  
192  
193  
194  
195  
196  
197  
198  
199  
200  
201  
202  
203  
204  
205  
206  
207  
208  
209  
210  
211  
212  
213  
214  
215  
216  
217  
218  
219  
220  
221  
222  
223  
224  
225  
226  
227  
228  
229  
230  
231  
232  
233  
234  
235  
236  
237  
238  
239  
240  
Symbol  
VCCQ  
Pin Name  
Function  
61  
A4  
VSS  
CK0,CK0#  
CKE0  
Clock Inputs, positive line  
Clock Enables  
2
62  
VCCQ  
A2  
DQ4  
A3  
3
DQ0  
DQ1  
VSS  
63  
DQ5  
A1  
4
64  
VCC  
VSS  
VCC  
CB0-CB7  
RAS#  
Check Bits  
5
65  
VSS  
DM0/DQS9  
NC/DQS9#  
VSS  
CK0  
Row Address Strobe  
Column Address Strobe  
Write Enable  
6
DQS0#  
DQS0  
VSS  
66  
VSS  
CK0#  
VCC  
CAS#  
7
67  
VCC  
8
68  
NC/Par_In*  
VCC  
DQ6  
A0  
WE#  
9
DQ2  
DQ3  
VSS  
69  
DQ7  
VCC  
S0#  
Chip Selects  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
70  
A10/AP  
BA0  
VSS  
BA1  
A0-A12  
BA0,BA1  
ODT0  
Address Inputs  
71  
DQ12  
DQ13  
VSS  
VCCQ  
DQ8  
DQ9  
VSS  
72  
VCCQ  
WE#  
CAS#  
VCCQ  
NC  
RAS#  
S0#  
SDRAM Bank Address  
On-die termination control  
Serial Presence Detect(SPD) Clock Input  
SPD Data Input/Output  
SPD address  
73  
74  
DM1/DQS10  
NC/DQS10#  
VSS  
VCCQ  
SCL  
DQS1#  
DQS1  
VSS  
75  
ODT0  
NC  
76  
SDA  
77  
NC  
NC  
VCC  
SA0-SA2  
DQ0-DQ63  
DQS0-DQS17  
RESET#  
NC  
78  
VCCQ  
VSS  
NC  
VSS  
Data Input/Output  
Data strobes  
79  
VSS  
DQ36  
DQ37  
VSS  
VSS  
80  
DQ32  
DQ33  
VSS  
DQ14  
DQ15  
VSS  
DQ10  
DQ11  
VSS  
81  
DQS0#-DQS17# Data strobes complement  
82  
DM4/DQS13  
NC/DQS13#  
VSS  
TEST*  
VCC  
Memory Bus Test  
83  
DQS4#  
DQS4  
VSS  
DQ20  
DQ21  
VSS  
DQ16  
DQ17  
VSS  
84  
Core and I/O Power (1.8V)  
I/O Power (1.8V)  
85  
DQ38  
DQ39  
VSS  
VCCQ  
VSS  
86  
DQ34  
DQ35  
VSS  
DM2/DQS11  
NC/DQS11#  
VSS  
Ground  
DQS2#  
DQS2  
VSS  
87  
88  
DQ44  
DQ45  
VSS  
VREF  
Input/Output Reference  
SPD Power  
89  
DQ40  
DQ41  
VSS  
DQ22  
DQ23  
VSS  
V
CCSPD  
DQ18  
DQ19  
VSS  
90  
NC  
Spare pins, No connect  
Register Reset Input  
Parity bit for control bus  
Parity error found in control  
91  
DM5/DQS14  
NC/DQS14#  
VSS  
92  
DQS5#  
DQS5  
VSS  
DQ28  
DQ29  
VSS  
RESET#  
Par_In*  
Err_Out*  
DQ24  
DQ25  
VSS  
93  
94  
DQ46  
DQ47  
VSS  
95  
DQ42  
DQ43  
VSS  
DM3/DQS12  
NC/DQS12#  
VSS  
DQS3#  
DQS3  
VSS  
96  
* These pins are not used in this module  
97  
DQ52  
DQ53  
VSS  
98  
DQ48  
DQ49  
VSS  
DQ30  
DQ31  
VSS  
DQ26  
DQ27  
VSS  
99  
100  
101  
102  
103  
104  
105  
106  
107  
108  
109  
110  
111  
112  
113  
114  
115  
116  
117  
118  
119  
120  
NC  
SA2  
CB4  
NC  
CB0  
NC(TEST)*  
VSS  
CB5  
VSS  
CB1  
VSS  
DM6/DQS15  
NC/DQS15#  
VSS  
VSS  
DQS6#  
DQS6  
VSS  
DM8/DQS17  
NC/DQS17#  
VSS  
DQS8#  
DQS8  
VSS  
DQ54  
DQ55  
VSS  
DQ50  
DQ51  
VSS  
CB6  
CB2  
CB7  
CB3  
VSS  
DQ60  
DQ61  
VSS  
VSS  
DQ56  
DQ57  
VSS  
VCCQ  
VCCQ  
CKE0  
VCC  
NC  
VCC  
DM7/DQS16  
NC/DQS16#  
VSS  
DQS7#  
DQS7  
VSS  
NC  
NC  
NC  
Err_Out*  
VCCQ  
A11  
VCCQ  
DQ62  
DQ63  
VSS  
DQ58  
DQ59  
VSS  
A12  
A9  
A7  
VCC  
VCCSPD  
SA0  
VCC  
SDA  
A8  
A5  
SCL  
A6  
SA1  
October 2006  
Rev. 2  
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M72AER-AD6  
White Electronic Designs  
ADVANCED  
FUNCTIONAL BLOCK DIAGRAM  
VSS  
RS0#  
DQS0  
DQS0#  
DM0/DQS9  
NC/DQS9#  
DM  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
DM  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
DQ0  
DQ1  
DQ2  
DQ3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ4  
DQ5  
DQ6  
DQ7  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQS1  
DQS1#  
DM1/DQS10  
NC/DQS10#  
DM  
DM  
DQ8  
DQ9  
DQ10  
DQ11  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ12  
DQ13  
DQ14  
DQ15  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQS2  
DQS2#  
DM2/DQS11  
NC/DQS11#  
DM  
DM  
DQ16  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ20  
DQ21  
DQ22  
DQ23  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ17  
DQ18  
DQ19  
DQS3  
DQS3#  
DM3/DQS12  
NC/DQS12#  
DM  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
DM  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
DQ24  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ28  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ25  
DQ26  
DQ27  
DQ29  
DQ30  
DQ31  
DQS4  
DQS4#  
DM4/DQS13  
NC/DQS13#  
DM  
DM  
DQ32  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ36  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ33  
DQ34  
DQ35  
DQ37  
DQ38  
DQ39  
DQS5  
DQS5#  
DM5/DQS14  
NC/DQS14#  
DM  
DM  
DQ40  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ44  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ41  
DQ42  
DQ43  
DQ45  
DQ46  
DQ47  
Serial PD  
DQS6  
DQS6#  
DM6/DQS15  
NC/DQS15#  
SCL  
SDA  
DM  
DM  
WP A0 A1 A2  
SA0 SA1 SA2  
DQ48  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ52  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ49  
DQ50  
DQ51  
DQ53  
DQ54  
DQ55  
DQS7  
DQS7#  
DM7/DQS16  
NC/DQS16#  
DM  
DM  
VCCSPD  
VCC/VCCQ  
VREF  
Serial PD  
DQ56  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ60  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ57  
DQ58  
DQ59  
DQ61  
DQ62  
DQ63  
DDR2 SDRAMs  
DDR2 SDRAMs  
DDR2 SDRAMs  
DQS8  
DQS8#  
DM8/DQS17  
NC/DQS17#  
DM  
DM  
VSS  
CB0  
CB1  
CB2  
CB3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
CB4  
CB5  
CB6  
CB7  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
CK0  
PCK0-PCK6, PCK8, PCK9 CK : DDR2 SDRAMs  
1:2  
R
E
G
I
P
L
L
RS0# : DDR2 SDRAMs  
S0#  
RBA0 - RBA1 : DDR2 SDRAMs  
RA0 - RA12 : DDR2 SDRAMs  
RRAS# : DDR2 SDRAMs  
RCAS# : DDR2 SDRAMs  
RWE# : DDR2 SDRAMs  
RCKE0 : DDR2 SDRAMs  
RODT0 : DDR2 SDRAMs  
BA0 - BA1  
A0 - A12  
RAS#  
CAS#  
WE#  
PCK0#-PCK6#, PCK8#, PCK9# CK# : DDR2 SDRAMs  
PCK7 CK : Register  
PCK7# CK# : Register  
CK0#  
OE  
RESET#  
S
T
E
R
CKE0  
ODT0  
RESET#  
RST#  
PCK7  
PCK7#  
NOTE: All resistor values are 22 ohms unless otherwise specied.  
October 2006  
Rev. 2  
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M72AER-AD6  
White Electronic Designs  
ADVANCED  
RECOMMENDED DC OPERATING CONDITIONS  
All Voltages Referenced to VSS  
Rating  
Parameter  
Symbol  
VCC  
Min.  
1.7  
Type  
1.8  
Max.  
1.9  
Units  
Notes  
Supply Voltage  
V
V
V
V
V
Supply Voltage for DLL  
Supply Voltage for Output  
Input Reference Voltage  
Termination Voltage  
VCCL  
VCCQ  
VREF  
VTT  
1.7  
1.8  
1.9  
4
4
1.7  
1.8  
1.9  
0.49*VCCQ  
VREF-0.04  
0.50*VCCQ  
VREF  
0.51*VCCQ  
VREF+0.04  
1, 2  
3
There is no specic device VCC supply voltage requirement for SSTL-1.8 compliance. However under all conditions VCCQ must be less than or equal to VCC  
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF isexpected to be about 0.5 x VCCQ of the transmitting  
device and VREF is expected to track variations in VCCQ  
2. Peak to peak AC noise on VREF may not exceed ±2% VREF(DC).  
3. TT of transmitting device must track VREF of receiving device.  
4. AC parameters are measured with VCC, VCCQ and VCCDL tied together.  
.
.
V
ABSOLUTE MAXIMUM RATINGS  
SSTL_1.8V  
Symbol  
VCC  
Parameter  
Rating  
Units  
Notes  
Voltage on VCC pin relative to VSS  
Voltage on VCCQ pin relative to VSS  
Voltage on VCCL pin relative to VSS  
Voltage on any pin relative to VSS  
Storage Temperature  
- 1.0 V - 2.3 V  
- 0.5 V - 2.3 V  
- 0.5 V - 2.3 V  
- 0.5 V - 2.3 V  
-55 to +100  
V
V
V
V
C
5
5
VCCQ  
VCCL  
5
VIN, VOUT  
TSTG  
5
5, 6  
5. Stresses greater than those listed under ìAbsolute Maximum Ratingsî may cause permanent damage to the device. This is a stress rating only and functional operation of the  
device at these or any other conditions above those indicated in the operational sections of this specication is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect reliability.  
6. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.  
CAPACITANCE  
TA = 25°C, f = 1MHz, VCC = VCCQ = 1.8V  
Parameter  
Symbol  
CCK  
CI1  
Max  
11  
Units  
pF  
Input Capacitance: CK, CK#  
Input Capacitance: CKE, CS#  
Input Capacitance: Addr. RAS#, CAS#, WE#  
Input/Output Capacitance: DQ, DQS, DM, DQS#  
12  
pF  
CI2  
12  
pF  
CIO  
10  
pF  
October 2006  
Rev. 2  
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M72AER-AD6  
White Electronic Designs  
ADVANCED  
DDR2 ICC SPECIFICATIONS AND CONDITIONS  
Includes DDR2 SDRAM components only  
Symbol Proposed Conditions  
ICC0 Operating one bank active-precharge current;  
534  
403  
Units  
tCK = tCK(ICC), tRC = tRC(ICC), tRAS = tRASmin(ICC); CKE is HIGH, CS# is HIGH between valid commands;  
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
2,420  
2,250  
mA  
ICC1  
Operating one bank active-read-precharge current;  
IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRC = tRC (ICC), tRAS = tRASmin(ICC), tRCD = tRCD(ICC);  
CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is  
same as IDAD6W  
2,640  
2,400  
mA  
ICC2P  
ICC2Q  
ICC2N  
ICC3P  
Precharge power-down current;  
All banks idle; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus  
inputs are FLOATING  
730  
670  
mA  
mA  
mA  
Precharge quiet standby current;  
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
1,110  
1,090  
1,040  
1,060  
Precharge standby current;  
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are  
SWITCHING; Data bus inputs are SWITCHING  
Active power-down current;  
All banks open; tCK = tCK(ICC); CKE is LOW; Other control and address  
bus inputs are STABLE; Data bus inputs are FLOATING  
Fast PDN Exit MRS(12) = 0mA  
Slow PDN Exit MRS(12) = 1mA  
1,190  
600  
1,130  
570  
mA  
mA  
ICC3N  
Active standby current;  
All banks open; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid  
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
1,840  
3,550  
1,730  
2,810  
mA  
mA  
IDAD6W  
Operating burst write current;  
All banks open, Continuous burst writes; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP  
= tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data  
bus inputs are SWITCHING  
IDAD6R  
Operating burst read current;  
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS  
tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are  
SWITCHING; Data pattern is same as IDAD6W  
=
3,230  
2,730  
mA  
ICC5B  
ICC6  
ICC7  
Burst auto refresh current;  
tCK = tCK(ICC); Refresh command at every tRFC(ICC) interval; CKE is HIGH, CS# is HIGH between valid  
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
3,610  
740  
3,430  
680  
mA  
mA  
Self refresh current;  
CK and CK# at 0V; CKE 0.2V; Other control and address bus inputs  
are FLOATING; Data bus inputs are FLOATING  
Operating bank interleave read current;  
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = tRCD(ICC)-1*tCK(ICC); tCK = tCK(ICC), tRC  
tRC(ICC), tRRD = tRRD(ICC), tRCD = 1*tCK(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address  
bus inputs are STABLE during DESELECTs; Data pattern is same as IDAD6R; Refer to the following page for  
detailed timing conditions  
=
5,540  
5,210  
mA  
October 2006  
Rev. 2  
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M72AER-AD6  
White Electronic Designs  
ADVANCED  
DDR2 SDRAM COMPONENT AC TIMING PARAMETERS & SPECIFICATIONS  
0°C TCASE < +85°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V  
AC CHARACTERISTICS  
PARAMETER  
534  
403  
SYMBOL  
tCK (4)  
tCK (3)  
tCH  
MIN  
3,750  
MAX  
8,000  
8,000  
0.55  
MIN  
5,000  
MAX  
8,000  
8,000  
0.55  
UNIT  
ps  
CL = 4  
CL = 3  
Clock cycle time  
5,000  
5,000  
ps  
CK high-level width  
0.45  
0.45  
tCK  
tCK  
ps  
CK low-level width  
tCL  
0.45  
0.55  
0.45  
0.55  
Half clock period  
tHP  
MIN (tCH, tCL  
)
MIN (tCH, tCL  
)
DQ output access time from CK/CK#  
Data-out high-impedance window from CK/CK#  
Data-out low-impedance window from CK/CK#  
DQ and DM input setup time relative to DQS  
DQ and DM input hold time relative to DQS  
A DQ and DM input pulse width (for each input)  
Data hold skew factor  
tAC  
-500  
+500  
-600  
+600  
ps  
tHZ  
tAC MAX  
tAC MAX  
tAC MAX  
tAC MAX  
ps  
tLZ  
tAC MIN  
100  
tAC MIN  
150  
ps  
tDS  
ps  
tDH  
225  
275  
ps  
tDIPW  
tQHS  
tQH  
0.35  
0.35  
tCK  
ps  
400  
450  
DQ…DQS hold, DQS to rst DQ to go nonvalid, per access  
DQS input high pulse width  
tHP - tQHS  
0.35  
0.35  
-450  
0.2  
tHP - tQHS  
0.35  
0.35  
-500  
0.2  
ps  
tDQSH  
tDQSL  
tDQSCK  
tDSS  
tDSH  
tCK  
tCK  
ps  
DQS input low pulse width  
DQS output access time from CK/CK#  
DQS falling edge to CK rising … setup time  
DQS falling edge from CK rising … hold time  
+450  
300  
+500  
350  
tCK  
tCK  
0.2  
0.2  
DQS…DQ skew, DQS to last DQ valid, per group,  
per access  
tDQSQ  
ps  
DQS read preamble  
tRPRE  
tRPST  
tWPRE  
tWPST  
tDQSS  
0.9  
0.4  
1.1  
0.6  
0.9  
0.4  
1.1  
0.6  
tCK  
tCK  
tCK  
tCK  
tCK  
DQS read postamble  
DQS write preamble  
0.35  
0.35  
DQS write postamble  
0.4  
0.6  
0.4  
0.6  
Write command to rst DQS latching transition  
WL - 0.25  
WL + 0.25  
WL - 0.25  
WL + 0.25  
Continued on next page  
October 2006  
Rev. 2  
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M72AER-AD6  
White Electronic Designs  
ADVANCED  
DDR2 SDRAM COMPONENT AC TIMING PARAMETERS & SPECIFICATIONS (cont'd)  
0°C TCASE < +85°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V  
AC CHARACTERISTICS  
534  
403  
PARAMETER  
Address and control input pulse width for each input  
Address and control input setup time  
Address and control input hold time  
CAS# to CAS# command delay  
SYMBOL  
tIPW  
tIS  
MIN  
0.6  
250  
375  
2
MAX  
MIN  
0.6  
350  
475  
2
MAX  
UNIT  
tCK  
ps  
tIH  
ps  
tCCD  
tRC  
tCK  
ns  
ACTIVE to ACTIVE (same bank) command  
ACTIVE bank a to ACTIVE bank b command  
ACTIVE to READ or WRITE delay  
ACTIVE to PRECHARGE command  
Internal READ to precharge command delay  
6 Write recovery time  
55  
55  
tRRD  
tRCD  
tRAS  
tRTP  
tWR  
7.5  
15  
7.5  
15  
ns  
ns  
40  
70,000  
40  
70,000  
ns  
7.5  
15  
7.5  
15  
ns  
ns  
Auto precharge write recovery + precharge time  
Internal WRITE to READ command delay  
PRECHARGE command period  
tDAL  
tWTR  
tRP  
tWR + tRP  
7.5  
15  
tWR + tRP  
10  
ns  
ns  
15  
ns  
LOAD MODE command cycle time  
OCD Drive mode delay  
tMRD  
tOIT  
2
2
tCK  
ns  
0
12  
0
12  
CKE low to CK,CK# uncertainty  
tDELAY  
tIS + tCK + tIH  
105  
tIS + tCK + tIH  
105  
ns  
REFRESH to REFRESH command interval  
Average periodic refresh interval  
tRFC  
70,000  
7.8  
70,000  
7.8  
ns  
tREF  
I
µs  
Exit self refresh to non-READ command  
Exit self refresh to READ command  
Exit self refresh timing reference  
ODT turn-on delay  
tXSNR  
tXSRD  
tISXR  
tAOND  
tRFC (MIN) + 10  
tRFC (MIN) + 10  
ns  
tCK  
ps  
200  
250  
2
200  
350  
2
2
2
tCK  
tAC (MAX) +  
1000  
tAC (MAX) +  
1000  
ODT turn-on  
tAON  
tAOFD  
tAOF  
tAC (MIN)  
2.5  
tAC (MIN)  
2.5  
ps  
tCK  
ps  
ODT turn-off delay  
ODT turn-off  
2.5  
2.5  
tAC (MAX) +  
600  
tAC (MAX) +  
600  
tAC (MIN)  
tAC (MIN)  
2 x tCK  
tAC (MAX) +  
1000  
+
2 x tCK +  
tAC (MAX) +  
1000  
tAC (MIN) +  
2000  
tAC (MIN) +  
2000  
ODT turn-on (power-down mode)  
ODT turn-off (power-down mode)  
tAONPD  
ps  
ps  
2.5 x tCK  
tAC (MAX) +  
1000  
+
2.5 x tCK +  
tAC (MAX) +  
1000  
tAC (MIN) +  
2000  
t
AC (MIN) +  
2000  
tAOFPD  
ODT to power-down entry latency  
tANPD  
tAXPD  
tXARD  
tXARDS  
tXP  
3
3
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
ODT power-down exit latency  
8
8
Exit active power-down to READ command, MR[bit12=0]  
Exit active power-down to READ command, MR[bit12=1]  
A Exit precharge power-down to any non-READ command.  
CKE minimum high/low time  
2
6 - AL  
2
2
6 - AL  
2
tCKE  
3
3
October 2006  
Rev. 2  
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M72AER-AD6  
White Electronic Designs  
ADVANCED  
ORDERING INFORMATION FOR AD6  
Part Number  
Speed  
CAS Latency  
tRCD  
4
tRP  
4
Height*  
WV3HG64M72AER534AD6  
WV3HG64M72AER403AD6  
266MHz/533Mb/s  
200MHz/400Mb/s  
4
3
18.29mm (0.72")  
18.29mm (0.72")  
3
3
NOTES:  
• RoHS product. (“G” = RoHS Compliant)  
• Vendor specic part numbers are used to provide memory component source control. The place holder for this is shown as a lower case "x"  
in the part numbers above and is to be replaced with respective vendors code. Consult factory for qualied sourcing options.  
(M = Micron, S = Samsung & consult factory for others)  
• Consult factory for availability of industrial temperature (-40°C to 85°C) option  
PACKAGE DIMENSIONS FOR AD6  
Front View  
133.35 (5.25)  
ꢀ.00  
(0.157)  
3.00  
(0.118)  
18.29  
(0.720)  
PLL  
ꢀ.00  
0.80 0.002  
ꢀ.00 (0.157)  
(0.157)  
1.7  
(0.066)  
(0.031 0.002)  
2.50 0.20  
(0.098 0.007)  
1.50 0.10  
1.00 (0.039)  
MAX  
(0.059 0.00ꢀ)  
1.27 0.10  
0.05 .00ꢀ  
5.00  
(0.196)  
Back View  
63.00 (2.ꢀ8)  
55.00 (2.165)  
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES)  
October 2006  
Rev. 2  
8
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M72AER-AD6  
White Electronic Designs  
ADVANCED  
PART NUMBERING GUIDE  
WV 3 H G 64M 72 A E R xxx AD6 x G  
WEDC  
MEMORY  
DDR 2  
GOLD  
DEPTH  
BUS WIDTH  
x4  
1.8V  
REGISTERED  
SPEED (MHz)  
PACKAGE 240 PIN (.72)  
COMPONENT VENDOR  
NAME  
(M = Micron)  
(S = Samsung)  
G = ROHS COMPLIANT  
October 2006  
Rev. 2  
9
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M72AER-AD6  
White Electronic Designs  
ADVANCED  
Document Title  
512MB – 64Mx72 DDR2 SDRAM REGISTERED, w/PLL  
Revision History  
Rev #  
Rev 0  
History  
Release Date Status  
Created  
March 2005  
Advanced  
Rev 1  
March 2005  
Advanced  
1.0 New Updates  
Rev 2  
October 2006  
Advanced  
2.0 Updated AC title to indicate component AC spec only  
October 2006  
Rev. 2  
10  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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