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VVZ40-16IO1

型号：

VVZ40-16IO1

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

209 K

下载PDF手册
VVZ40-16io1  
3~  
Rectifier  
Thyristor Module  
VRRM  
IDAV  
IFSM  
V
A
A
= 1600  
45  
=
=
320  
3~ Rectifier Bridge, half-controlled (high-side)  
Part number  
VVZ40-16io1  
Backside: isolated  
8
4
7
5
2
1
6
3
V1-B-Pack  
Features / Advantages:  
Applications:  
Package:  
● Package with DCB ceramic base plate  
● Improved temperature and power cycling  
● Planar passivated chips  
● Line rectifying 50/60 Hz  
● Drives  
● SMPS  
● Isolation Voltage:  
● Industry standard outline  
● RoHS compliant  
V~  
3600  
● Very low forward voltage drop  
● Very low leakage current  
● UPS  
● Soldering pins for PCB mounting  
● Height: 10 mm  
● Base plate: DCB ceramic  
● Reduced weight  
● Advanced power cycling  
Terms and Conditions of Usage  
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and  
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The  
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns  
the specific application of your product, please contact your local sales office.  
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.  
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend  
- to perform joint risk and quality assessments;  
- the conclusion of quality agreements;  
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20140310e  
© 2014 IXYS all rights reserved  
VVZ40-16io1  
Ratings  
Rectifier  
Symbol  
VRSM/DSM  
Definition  
Conditions  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
1700  
1600  
300  
5
V
V
max. non-repetitive reverse/forward blocking voltage  
max. repetitive reverse/forward blocking voltage  
VRRM/DRM  
IR/D  
VR/D =1600 V  
VR/D =1600 V  
IT = 15 A  
IT = 45 A  
IT = 15 A  
IT = 45 A  
TC = 100°C  
rectangular  
µA  
mA  
V
reverse current, drain current  
forward voltage drop  
1.12  
1.47  
1.07  
1.52  
45  
VT  
V
TVJ  
=
°C  
V
125  
V
bridge output current  
threshold voltage  
TVJ = 125°C  
TVJ = 125°C  
A
IDAV  
d = ⅓  
0.85  
V
VT0  
for power loss calculation only  
slope resistance  
15 mΩ  
rT  
1
K/W  
K/W  
W
RthJC  
RthCH  
Ptot  
ITSM  
thermal resistance junction to case  
thermal resistance case to heatsink  
0.60  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
100  
320  
345  
270  
295  
total power dissipation  
max. forward surge current  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400V f = 1 MHz  
tP = 30 µs  
A
A
TVJ = 125°C  
VR = 0 V  
A
A
value for fusing  
TVJ = 45°C  
VR = 0 V  
I²t  
510 A²s  
495 A²s  
365 A²s  
360 A²s  
pF  
TVJ = 125°C  
VR = 0 V  
junction capacitance  
TVJ = 25°C  
TC = 125°C  
16  
CJ  
10  
1
W
W
W
PGM  
max. gate power dissipation  
tP = 300 µs  
0.5  
PGAV  
average gate power dissipation  
critical rate of rise of current  
TVJ = 125°C; f = 50 Hz  
repetitive, IT = 45 A  
150 A/µs  
(di/dt)cr  
0.3  
tP = 200 µs;diG /dt =  
A/µs;  
IG = 0.3A; V = ⅔ VDRM  
V = ⅔ VDRM  
non-repet., IT = 15 A  
TVJ = 125°C  
500 A/µs  
critical rate of rise of voltage  
gate trigger voltage  
1000 V/µs  
(dv/dt)cr  
VGT  
RGK = ∞; method 1 (linear voltage rise)  
VD = 6 V  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 125°C  
1
V
V
1.2  
gate trigger current  
VD = 6 V  
65 mA  
80 mA  
IGT  
gate non-trigger voltage  
gate non-trigger current  
latching current  
VD = ⅔ VDRM  
tp = 30 µs  
0.2  
5
V
VGD  
IGD  
IL  
mA  
TVJ = 25°C  
150 mA  
IG  
=
0.3A; diG/dt = 0.3 A/µs  
holding current  
VD = 6 V RGK = ∞  
TVJ = 25°C  
TVJ = 25°C  
100 mA  
IH  
gate controlled delay time  
VD = ½ V  
2
µs  
µs  
tgd  
DRM  
IG  
VR = 100 V; IT = 15 A; V = ⅔ VDRM TVJ =100 °C  
di/dt = 10 A/µs dv/dt = 20 V/µs µs  
=
0.3A; diG/dt = 0.3 A/µs  
turn-off time  
150  
tq  
tp = 300  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20140310e  
© 2014 IXYS all rights reserved  
VVZ40-16io1  
Ratings  
Package V1-B-Pack  
Symbol  
IRMS  
Definition  
Conditions  
min. typ. max. Unit  
per terminal  
100  
125  
100  
125  
A
°C  
°C  
°C  
g
RMS current  
-40  
-40  
-40  
TVJ  
virtual junction temperature  
Top  
operation temperature  
storage temperature  
Tstg  
30  
Weight  
MD  
2
2.5 Nm  
mounting torque  
terminal to terminal  
terminal to backside  
6.0  
12.0  
mm  
mm  
V
dSpp/App  
dSpb/Apb  
creepage distance on surface | striking distance through air  
t = 1 second  
3600  
3000  
V
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
Date Code  
Prod. Index  
yywwA  
Part Number (Typ)  
Lot No.:  
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)  
leer (33), lfd.# (33-36)  
Ordering  
Ordering Number  
Marking on Product  
VVZ40-16io1  
Delivery Mode  
Quantity Code No.  
466379  
Standard  
VVZ40-16io1  
Box  
5
TVJ = 125°C  
Equivalent Circuits for Simulation  
* on die level  
Thyristor  
V0  
I
R0  
threshold voltage  
slope resistance *  
0.85  
12.5  
V
V0 max  
R0 max  
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20140310e  
© 2014 IXYS all rights reserved  
VVZ40-16io1  
Outlines V1-B-Pack  
2
35 x 26  
38.6  
Kühlfläche  
cooling area  
14  
14  
5 5  
1.6  
48  
63  
8
4
7
5
2
1
6
3
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20140310e  
© 2014 IXYS all rights reserved  
VVZ40-16io1  
Thyristor  
60  
300  
600  
500  
400  
300  
200  
100  
0
50  
TVJ = 45°C  
40  
TVJ= 45°C  
I2t  
IF  
I
30  
FSM 200  
TVJ = 125°C  
TVJ 25°C  
[A2s]  
[A]  
TVJ= 125°C  
[A]  
=
TVJ = 125°C  
20  
10  
0
50Hz, 80% VRRM  
100  
0.001  
1
2
3
4
5 6 7 8 9  
0.0  
0.5  
1.0  
1.5  
2.0  
0.01  
0.1  
1
VF [V]  
t [s]  
t [ms]  
Fig. 3 I2t vs. time per thyristor  
Fig. 1 Forward current vs.  
voltage drop per thyristor  
Fig. 2 Surge overload current  
vs. time per thyristor  
10  
1000  
100  
60  
50  
40  
T
1: IGD  
T
VJ = 125°C  
VJ = 25°C  
,
2: IGT, TVJ  
= 25°C  
DC =  
1
3: IGT, TVJ = -40°C  
0.5  
6
typ.  
Limit  
0.4  
0.33  
0.17  
0.08  
5
4
VG  
[V]  
tgd  
IT(AV)M  
3
2
1
30  
20  
10  
0
[μs]  
[A]  
10  
1
4: PGAV = 0.5 W  
5: PGM  
6: PGM  
=
=
1 W  
10 W  
0.1  
100  
1
10  
101  
102  
103  
104  
100  
1000  
0
50  
100  
TC [°C]  
Fig. 5 Max. forward current vs.  
case temperature per thyristor  
150  
IG [mA]  
IG [mA]  
Fig. 4 Gate trigger characteristics  
Fig. 5 Gate trigger delay time  
25  
20  
15  
10  
1.2  
DC =  
1
RthHA  
:
0.6 K/W  
0.8 K/W  
1.0 K/W  
2.0 K/W  
4.0 K/W  
8.0 K/W  
0.5  
1.0  
0.8  
0.6  
0.4  
0.33  
0.17  
0.08  
ZthJC  
Constants for ZthJC calc.:  
Ptot  
i
Rth (K/W)  
ti (s)  
[K/W]  
0.4  
[W]  
1
2
3
4
5
0.020  
0.100  
0.210  
0.410  
0.260  
0.0004  
0.0090  
0.0140  
0.0500  
0.3600  
5
0
0.2  
0.0  
0
5
10  
15  
20  
0
50  
100  
150  
1
10  
100  
t [ms]  
1000  
10000  
IT(AV)M [A]  
Tamb [°C]  
Fig. 4 Power dissipation vs. forward current  
and ambient temperature per thyristor  
Fig. 6 Transient thermal impedance junction to case  
vs. time per thyristor  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20140310e  
© 2014 IXYS all rights reserved  
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