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IXTT1N250HV

型号：

IXTT1N250HV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

156 K

下载PDF手册
Advance Technical Information  
High Voltage  
Power MOSFET  
VDSS = 2500V  
ID25 = 1.5A  
RDS(on) ≤ 40Ω  
IXTT1N250HV  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
TO-268S  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
2500  
2500  
V
V
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
1.5  
6
A
A
PD  
TC = 25°C  
250  
W
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
z
High Blocking Voltage  
High Voltage Package  
Fast Intrinsic Diode  
z
z
z
TL  
TSOLD  
1.6mm (0.062 in.) From Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Low Package Inductance  
Weight  
4
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
2.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = 0.8 • VDSS, VGS = 0V  
V
V
z
High Voltage Power Supplies  
Capacitor Discharge  
z
4.0  
z
Pulse Circuits  
±100 nA  
IDSS  
25 μA  
μA  
TJ = 125°C  
25  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
40  
Ω
DS100521(12/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTT1N250HV  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 (VHV) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 50V, ID = 0.5A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
1.0  
1.8  
mS  
Ciss  
Coss  
Crss  
1660  
77  
pF  
pF  
pF  
23  
PIN:  
1 - Gate  
2 - Source  
3 - Drain  
td(on)  
tr  
td(off)  
tf  
69  
25  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A  
RG = 5Ω (External)  
132  
39  
Qg(on)  
Qgs  
41  
8
nC  
nC  
nC  
VGS = 10V, VDS = 600V, ID = 0.5A  
Qgd  
16  
RthJC  
RthCS  
0.50 °C/W  
°C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
1.5  
6
IS  
VGS = 0V  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 1A, VGS = 0V, Note 1  
IF = 1A, -di/dt = 100A/μs, VR = 200V  
1.5  
V
2.5  
μs  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXTT1N250HV  
Fig. 2. Output Characteristics @ TJ = 125ºC  
Fig. 1. Output Characteristics @ TJ = @ 25ºC  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
VGS = 10V  
VGS = 10V  
5V  
5V  
4V  
4V  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.  
Junction Temperature  
Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs.  
Drain Current  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
I D = 1A  
I D = 0.5A  
TJ = 25ºC  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1.6  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
TJ = 125ºC  
25ºC  
- 40ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
2.8  
3.0  
3.2  
3.4  
3.6  
3.8  
4.0  
4.2  
4.4  
4.6  
4.8  
5.0  
TC - Degrees Centigrade  
VGS - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTT1N250HV  
Fig. 8. Forward Voltage Drop of  
Fig. 7. Transconductance  
Intrinsic Diode  
3
2.5  
2
3
2.5  
2
TJ = - 40ºC  
25ºC  
125ºC  
1.5  
1
1.5  
1
TJ = 125ºC  
TJ = 25ºC  
0.5  
0
0.5  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
ID - Amperes  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
10,000  
1,000  
100  
= 1MHz  
f
VDS = 600V  
D = 500mA  
I G = 10mA  
I
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 12. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
10  
10  
RDS(on) Limit  
RDS(on) Limit  
25µs  
25µs  
100µs  
100µs  
1
1
1ms  
1ms  
10ms  
10ms  
100ms  
0.1  
0.01  
0.1  
0.01  
100ms  
DC  
TJ = 150ºC  
DC  
TJ = 150ºC  
TC = 25ºC  
TC = 75ºC  
Single Pulse  
Single Pulse  
100  
1,000  
10,000  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTT1N250HV  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1N250 (5P)10-25-10-D  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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