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IXTK32P60P

型号:

IXTK32P60P

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

145 K

Preliminary Technical Information  
PolarPTM  
Power MOSFET  
VDSS = - 600V  
ID25 = - 32A  
IXTK32P60P  
IXTX32P60P  
RDS(on)  
350mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 600  
- 600  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
(TAB)  
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
- 32  
- 90  
A
A
PLUS247 (IXTX)  
IAR  
TC = 25°C  
TC = 25°C  
- 32  
3.5  
A
J
EAS  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
890  
(TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Md  
Mounting force  
Mounting torque  
(PLUS247)  
(TO-264)  
20..120/4.5..27  
1.13/10  
N/lb.  
Nm/lb.in.  
Features  
Weight  
PLUS247  
TO-264  
6
10  
g
g
z International standard packages  
z Rugged PolarPTM process  
z Avalanche Rated  
z Low package inductance  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Applications  
(TJ = 25°C, unless otherwise specified)  
z
High side switching  
Push-pull amplifiers  
DC Choppers  
Automatic test equipment  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±20V, VDS = 0V  
- 600  
- 2.5  
V
z
- 4.5  
V
z
z
±100 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
- 50 μA  
- 250 μA  
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
350 mΩ  
DS99990(5/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTK32P60P  
IXTX32P60P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXTK) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
21  
32  
S
Ciss  
Coss  
Crss  
11.1  
925  
77  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
37  
27  
95  
33  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
196  
54  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
58  
RthJC  
RthCS  
0.14 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
- 32  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = -16A, VGS = 0V, Note 1  
-128  
- 2.8  
PLUS 247TM (IXTX) Outline  
trr  
QRM  
IRM  
480  
11.4  
- 47.6  
nS  
μC  
A
IF = -16A, -di/dt = -150A/μs  
VR = -100V, VGS = 0V  
Note 1: Pulse test, t 300μs; duty cycle, d 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
PRELIMINARY TECHNICAL INFORMATION  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK32P60P  
IXTX32P60P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
-32  
-28  
-24  
-20  
-16  
-12  
-8  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
VGS = -10V  
- 7V  
VGS = -10V  
- 7V  
- 6V  
- 5V  
- 6V  
- 5V  
-4  
0
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10  
0
-3  
-6  
-9  
-12  
-15  
-18  
-21  
-24  
-27  
-30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = -16A vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
-32  
-28  
-24  
-20  
-16  
-12  
-8  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = -10V  
-7V  
VGS = -10V  
- 6V  
I D = - 32A  
I D = -16A  
- 5V  
-4  
0
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = -16A vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-36  
-32  
-28  
-24  
-20  
-16  
-12  
-8  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
TJ = 125ºC  
VGS = -10V  
TJ = 25ºC  
-4  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
TJ - Degrees Centigrade  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTK32P60P  
IXTX32P60P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-3.6  
-40  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-100  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
VDS = - 300V  
D = -16A  
I G = -1mA  
I
TJ = 125ºC  
TJ = 25ºC  
-0.8  
-1.2  
-1.6  
-2.0  
-2.4  
-2.8  
-3.2  
0
20  
40  
60  
80  
100 120 140 160 180 200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
-
100.0  
-10.0  
100,000  
10,000  
1,000  
100  
RDS(on) Limit  
= 1 MHz  
f
25µs  
100µs  
C
iss  
1ms  
10ms  
C
oss  
DC, 100ms  
-
1.0  
0.1  
TJ = 150ºC  
TC = 25ºC  
C
rss  
Single Pulse  
10  
-
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-
-
-
1000  
10  
100  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTK32P60P  
IXTX32P60P  
Fig. 13. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_32P60P(B9) 6-03-08  
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