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IXTA200N085T7

型号：

IXTA200N085T7

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

162 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
VDSS = 85  
ID25 = 200  
RDS(on) ≤ 5.0 mΩ  
V
A
IXTA200N085T7  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (7-lead) (IXTA..7)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
85  
85  
V
V
VGSM  
Transient  
± 20  
V
1
ID25  
ILRMS  
IDM  
TC = 25°C  
200  
120  
540  
A
A
A
7
Lead Limited, RMS  
(TAB)  
TC = 25°C, pulse width limited by TJM  
Pin-out:1 - Gate  
2, 3 - Source  
4 - NC (cut)  
5,6,7 - Source  
TAB (8) - Drain  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
1.0  
A
mJ  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 5 Ω  
3
V/ns  
TC = 25°C  
480  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
Weight  
3
g
Advantages  
ꢀ
Easy to mount  
ꢀ
Space savings  
ꢀ
High power density  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
Automotive  
- Motor Drives  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ± 20 V, VDS = 0 V  
85  
V
V
- 42V Power Bus  
2.0  
4.0  
- ABS Systems  
ꢀ
± 200  
nA  
DC/DC Converters and Off-line UPS  
ꢀ
Primary Switch for 24V and 48V  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
μA  
μA  
Systems  
TJ = 150°C  
250  
ꢀ
High Current Switching  
Applications  
RDS(on)  
VGS = 10 V, ID = 25 A, Note 1  
4.0  
5.0 mΩ  
DS99702 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTA200N085T7  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (7-lead) (IXTA...7) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
75  
125  
S
Ciss  
Coss  
Crss  
7600  
1040  
200  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
32  
80  
65  
64  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
152  
37  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
Pins: 1 - Gate  
2, 3 - Source  
4 - Drain  
Qgd  
42  
RthJC  
0.31°C/W  
5,6,7 - Source  
Tab (8) - Drain  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0 V  
200  
A
A
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
540  
1.0  
V
IF = 25 A, -di/dt = 100 A/μs  
90  
ns  
VR = 40 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %.  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463  
7,005,734 B2  
7,063,975 B2  
6771478 B2 7,071,537  
IXTA200N085T7  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
300  
270  
240  
210  
180  
150  
120  
90  
V
= 10V  
V
= 10V  
GS  
GS  
8V  
7V  
8V  
7V  
6V  
6V  
5V  
60  
40  
5V  
60  
20  
30  
0
0
0
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
VDS - Volts  
1
1.1  
0
1
2
3
4
5
6
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 100A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 200A  
D
6V  
5V  
I
= 100A  
D
60  
40  
20  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2 2.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 100A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.8  
2.6  
2.4  
2.2  
2
140  
120  
100  
80  
External Lead Current Limit for TO-263 (7-Lead)  
T = 175ºC  
J
V
= 10V  
GS  
1.8  
1.6  
1.4  
1.2  
1
15V - - - -  
External Lead Current Limit for TO-3P, TO-220, & TO-263  
60  
40  
20  
T = 25ºC  
J
0.8  
0.6  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
40  
80  
120  
160  
200  
240  
280  
320  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTA200N085T7  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
270  
240  
210  
180  
150  
120  
90  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
T
J
= -40ºC  
25ºC  
150ºC  
150ºC  
60  
40  
60  
20  
30  
0
0
0
30  
60  
90  
120 150 180 210 240 270 300  
ID - Amperes  
3
0.4  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
1.3  
40  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
270  
240  
210  
180  
150  
120  
90  
V
= 43V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
= 150ºC  
J
T
= 25ºC  
J
60  
30  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
oss  
C
f = 1 MHz  
5
rss  
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA200N085T7  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
100  
90  
80  
70  
60  
50  
40  
30  
R
V
V
= 5  
Ω
G
= 10V  
= 43V  
GS  
DS  
T = 25ºC  
J
R
V
V
= 5  
Ω
G
= 10V  
= 43V  
GS  
DS  
I
= 50A  
D
I
= 25A  
45  
D
T = 125ºC  
J
25  
30  
35  
40  
45  
50  
25  
35  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
70  
97  
94  
91  
88  
85  
82  
79  
76  
73  
70  
180  
160  
140  
120  
100  
80  
65  
60  
55  
50  
45  
40  
35  
30  
25  
t r  
td(on)  
- - - -  
68  
66  
64  
62  
60  
58  
56  
54  
52  
TJ = 125ºC, V = 10V  
GS  
I = 25A  
D
V
= 43V  
DS  
I
= 50A  
t f  
R
td(off)  
- - - -  
D
= 5 , V = 10V  
G
Ω
GS  
V
= 43V  
I
= 25A  
DS  
D
60  
I
= 50A  
D
40  
20  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
72  
70  
68  
66  
64  
62  
60  
58  
56  
54  
52  
50  
105  
100  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
200  
180  
160  
140  
120  
100  
80  
320  
290  
260  
230  
200  
170  
140  
110  
80  
tf  
td(off)  
- - - -  
T = 25ºC  
J
T = 125ºC, VGS = 10V  
J
VDS = 43V  
TJ = 125ºC  
t f  
td(off)  
- - - -  
I
= 50A  
D
I
= 25A  
D
R
G
= 5 , VGS = 10V  
Ω
VDS = 43V  
T =125ºC  
J
60  
T = 25ºC  
J
40  
4
6
8
10  
12  
14  
16  
18  
20  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
RG - Ohms  
IXYS REF: T_200N085T (61) 11-20-06-A.xls  
© 2006 IXYS CORPORATION All rights reserved  
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