请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTA60N10T-TRL

型号：

IXTA60N10T-TRL

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

232 K

下载PDF手册
TrenchTM  
Power MOSFET  
VDSS = 100V  
ID25 = 60A  
RDS(on) 18m  
IXTA60N10T  
IXTP60N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263  
(IXTA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220  
(IXTP)  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
100  
100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
60  
180  
A
A
D (Tab)  
G = Gate  
S = Source Tab = Drain  
D
= Drain  
IA  
TC = 25C  
TC = 25C  
10  
A
EAS  
500  
mJ  
PD  
TC = 25C  
176  
W
TJ  
-55 ... +175  
175  
C  
C  
C  
Features  
TJM  
Tstg  
Ultra-Low On Resistance  
Avalanche Rated  
-55 ... +175  
Low Package Inductance  
- Easy to Drive and to Protect  
175C Operating Temperature  
Fast Intrinsic Diode  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Applications  
Automotive  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
- Motor Drives  
- 42V Power Bus  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 50A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
100  
2.5  
V
- ABS Systems  
4.5  
            100 nA  
A  
V
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
Distributed Power Architechtures  
IDSS  
1
and VRMs  
Electronic Valve Train Systems  
High Current Switching  
TJ = 150C  
VGS = 10V, ID = 25A, Notes 1& 2  
100  A  
18.0 m  
RDS(on)  
14.8  
Applications  
High Voltage Synchronous Recifier  
DS99647C(11/18)  
© 2018 IXYS CORPORATION, All rights reserved  
IXTA60N10T  
IXTP60N10T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 Outline  
A
(TJ = 25C, Unless Otherwise Specified)  
E
E1  
C2  
L1  
L2  
gfs  
VDS = 10V, ID = 30A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
25  
42  
S
D1  
D
4
H
A1  
1
2
3
Ciss  
Coss  
Crss  
2650  
335  
60  
pF  
pF  
pF  
b
b2  
L3  
c
e
e
0.43 [11.0]  
0  
0.34 [8.7]  
td(on)  
tr  
td(off)  
tf  
27  
40  
43  
37  
ns  
ns  
ns  
ns  
0.66 [16.6]  
A2  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A  
RG = 15(External)  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
Qg(on)  
Qgs  
49  
15  
11  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A  
Qgd  
RthJC  
RthCH  
0.85C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
60  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 25A, VGS = 0V, Note 1  
240  
1.2  
TO-220 Outline  
A
E
oP  
A1  
H1  
Q
trr  
IRM  
QRM  
59  
5.1  
180  
ns  
A
nC  
IF = 30A, VGS = 0V  
D2  
E1  
D
-di/dt = 100A/s, VR = 50V  
D1  
A2  
EJECTOR  
PIN  
L1  
L
3X b  
e
c
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.  
e1  
3X b2  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTA60N10T  
IXTP60N10T  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
9V  
7V  
8V  
7V  
60  
40  
6V  
6V  
20  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 30A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
9V  
8V  
V
= 10V  
GS  
I
= 60A  
D
7V  
I
= 30A  
D
6V  
5V  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
2.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 30A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
15V  
T = 175oC  
J
GS  
T = 25oC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
15  
30  
45  
60  
75  
90  
105  
120  
135  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All rights reserved  
IXTA60N10T  
IXTP60N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40oC  
25oC  
T
J
= 150oC  
25oC  
- 40oC  
150oC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
180  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 50V  
DS  
I
I
= 10A  
D
G
= 10mA  
T
J
= 150oC  
60  
T
J
= 25oC  
40  
20  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1
10,000  
1,000  
100  
f
= 1 MHz  
C
C
iss  
0.1  
oss  
C
rss  
10  
0.01  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA60N10T  
IXTP60N10T  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
60  
55  
50  
45  
40  
35  
30  
25  
60  
55  
50  
45  
40  
35  
30  
25  
R
= 15Ω, V = 10V  
GS  
G
R
= 15Ω, V = 10V  
GS  
G
V
= 50V  
DS  
V
= 50V  
DS  
T
= 25oC  
J
I
= 30A  
D
T
J
= 125oC  
I
= 10A  
55  
D
25  
35  
45  
65  
75  
85  
95  
105  
115  
125  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
170  
150  
130  
110  
90  
80  
70  
60  
50  
40  
30  
20  
10  
39  
64  
60  
56  
52  
48  
44  
40  
t r  
td(on)  
TJ = 125oC, V = 10V  
38  
37  
36  
35  
34  
33  
GS  
I
= 30A  
D
I
= 10A  
D
V
= 50V  
DS  
t f  
R
td(off)  
= 15Ω, V = 10V  
G
GS  
10A < I < 30A  
D
V
= 50V  
DS  
I
= 10A  
D
I
= 30A  
D
70  
50  
30  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
15  
20  
25  
30  
35  
40  
45  
50  
55  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
40  
39  
38  
37  
36  
35  
34  
33  
32  
67  
63  
59  
55  
51  
47  
43  
39  
35  
120  
110  
100  
90  
185  
170  
155  
140  
125  
110  
95  
t f  
td(off)  
I
= 10A, 30A  
D
t f  
T
J
td(off)  
R
G
= 15Ω, VGS = 10V  
= 125oC, V = 10V  
GS  
VDS = 50V  
V
= 50V  
DS  
TJ = 125oC  
80  
70  
60  
T = 25oC  
J
50  
80  
40  
65  
30  
50  
15  
20  
25  
30  
35  
40  
45  
50  
55  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
RG - Ohms  
ID - Amperes  
© 2018 IXYS CORPORATION, All rights reserved  
IXYS REF: T_60N10T (2V)8-07-08-A  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.220729s